STGW60V60DF, STGWA60V60DF STGWT60V60DF Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Datasheet - production data Features * Maximum junction temperature: TJ = 175 C * Tail-less switching off 2 3 1 TO-247 TO-247 long leads * VCE(sat) = 1.85 V (typ.) @ IC = 60 A * Tight parameter distribution * Safe paralleling * Low thermal resistance TAB * Very fast soft recovery antiparallel diode Applications 3 2 1 * Photovoltaic inverters TO-3P Figure 1. Internal schematic diagram C (2 or TAB) * Uninterruptible power supply * Welding * Power factor correction * Very high frequency converters Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. G (1) E (3) Table 1. Device summary Order code Marking Package Packing STGW60V60DF GW60V60DF TO-247 Tube STGWA60V60DF G60V60DF TO-247 long leads Tube STGWT60V60DF GWT60V60DF TO-3P Tube September 2016 This is information on a product in full production. DocID024154 Rev 7 1/20 www.st.com 20 Contents STGW60V60DF, STGWA60V60DF, STGWT60V60DF Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 2/20 4.1 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.2 TO-247 long leads package information . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.3 TO-3P package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 DocID024154 Rev 7 STGW60V60DF, STGWA60V60DF, STGWT60V60DF 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VCES Parameter Collector-emitter voltage (VGE = 0) Value Unit 600 V (1) A IC Continuous collector current at TC = 25 C IC Continuous collector current at TC = 100 C 60 A ICP(2) Pulsed collector current 240 A VGE Gate-emitter voltage 20 V (1) A 80 IF Continuous forward current at TC = 25 C IF Continuous forward current at TC = 100 C 60 A IFP(2) Pulsed forward current 240 A PTOT Total dissipation at TC = 25 C 375 W TSTG Storage temperature range - 55 to 150 C Operating junction temperature range - 55 to 175 C Value Unit TJ 80 1. Current level is limited by bond wires 2. Pulse width limited by maximum junction temperature. Table 3. Thermal data Symbol Parameter RthJC Thermal resistance junction-case IGBT 0.4 C/W RthJC Thermal resistance junction-case diode 1.14 C/W RthJA Thermal resistance junction-ambient 50 C/W DocID024154 Rev 7 3/20 Electrical characteristics 2 STGW60V60DF, STGWA60V60DF, STGWT60V60DF Electrical characteristics TJ = 25 C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. VGE = 15 V, IC = 60 A Collector-emitter saturation TJ = 125 C voltage VGE = 15 V, IC = 60 A TJ = 175 C Forward on-voltage Unit V 1.85 2.3 2.15 V 2.35 IF = 60 A VF Max. 600 VGE = 15 V, IC = 60 A VCE(sat) Typ. 2 2.6 V IF = 60 A TJ = 125 C 1.7 V IF = 60 A TJ = 175 C 1.6 V VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) IGES Gate-emitter leakage current (VCE = 0) 5 6 7 V VCE = 600 V 25 A VGE = 20 V 250 nA Table 5. Dynamic characteristics Symbol 4/20 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 VCC = 480 V, IC = 60 A, VGE = 15 V, see Figure 29 Qge Gate-emitter charge Qgc Gate-collector charge DocID024154 Rev 7 Min. Typ. Max. Unit - 8000 - pF - 280 - pF - 170 - pF - 334 - nC - 130 - nC - 58 - nC STGW60V60DF, STGWA60V60DF, STGWT60V60DF Electrical characteristics Table 6. IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time - 60 - ns Current rise time - 20 - ns - 2365 - A/s - 208 - ns - 14 - ns Turn-on current slope VCE = 400 V, IC = 60 A, RG = 4.7 , VGE = 15 V, see Figure 28 Turn-off delay time Current fall time Eon(1) Turn-on switching energy - 0.75 - mJ Eoff(2) Turn-off switching energy - 0.55 - mJ Total switching energy - 1.3 - mJ Turn-on delay time - 57 - ns Current rise time - 23 - ns Turn-on current slope - 2191 - A/s - 216 - ns - 27 - ns Ets td(on) tr (di/dt)on td(off) tf VCE = 400 V, IC = 60 A, RG = 4.7 , VGE = 15 V, TJ = 175 C, see Figure 28 Turn-off delay time Current fall time Eon(1) Turn-on switching energy - 1.5 - mJ Eoff(2) Turn-off switching energy - 0.8 - mJ Total switching energy - 2.3 - mJ Ets 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current. Table 7. Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit - 74 - ns - 703 - nC - 19 - A - 714 - A/s trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/ /dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy - 184 - J trr Reverse recovery time - 131 - ns Qrr Reverse recovery charge - 2816 - nC Irrm Reverse recovery current - 43 - A dIrr/ /dt Peak rate of fall of reverse recovery current during tb - 404 - A/s Err Reverse recovery energy - 821 - J IF = 60 A, VR = 400 V, VGE = 15 V, diF/dt = 1000 A/s see Figure 28 IF = 60 A, VR = 400 V, VGE = 15 V diF/dt = 1000 A/s TJ = 175 C, see Figure 28 DocID024154 Rev 7 5/20 Electrical characteristics 2.1 STGW60V60DF, STGWA60V60DF, STGWT60V60DF Electrical characteristics (curves) Figure 2. Power dissipation vs. case temperature AM17139v1 Ptot (W) Figure 3. Collector current vs. temperature case AM17140v1 IC (A) 350 80 300 70 VGE >_ 15 V, TJ <_ 175 C 60 250 50 200 40 150 30 100 20 50 10 0 0 25 50 100 125 150 175 TC (C) 75 Figure 4. Output characteristics @ 25 C AM17141v1 Ic (A) TJ = 25 C VGE=15 V 0 0 25 50 100 125 150 175 TC (C) 75 Figure 5. Output characteristics @ 175 C AM17142v1 IC (A) VGE=15 V TJ = 175 C 13 V 200 200 11 V 11 V 13 V 150 150 9V 9V 100 100 50 50 7V 0 0 1 2 3 4 7V VCE (V) Figure 6. VCE(SAT) vs. junction temperature VCE(sat) (V) 3.2 AM17143v1 VGE = 15 V IC = 120 A 3.0 2.8 2.8 2.6 2.6 2.4 IC = 60 A 2.2 2.2 2.0 2.0 1.8 1.8 1.6 IC = 30 A 1 2 3 4 VCE (V) 1.6 AM17144v1 VGE = 15 V TJ = 175 C TJ = 25 C TJ = - 40 C 1.4 1.4 1.2 -50 -25 0 Figure 7. VCE(SAT) vs. collector current VCE(sat) (V) 3.2 3.0 2.4 6/20 0 0 25 50 75 100 125 150 175 TJ (C) 1.2 10 20 30 40 50 60 70 80 90 100 110 120 IC (A) DocID024154 Rev 7 STGW60V60DF, STGWA60V60DF, STGWT60V60DF Electrical characteristics Figure 8. Collector current vs. switching frequency AM17145v1 Ic [A] Figure 9. Safe operating area AM17146v1 I C (A) 1 s 110 100 100 Tc=80C 100 s 90 Tc=100 C 80 10 70 1 ms 60 1 50 40 30 0.1 rectangular current shape, (duty cycle=0.5, VCC = 400V, RG=4.7 , VGE = 0/15 V, TJ =175C) 20 10 0.01 0 1 f [kHz] 10 Figure 10. Transfer characteristics AM17146v1 IC (A) (single pulse TC =25 C, TJ <=175 C; VGE =15 V) 1 10 VCE (V) 100 Figure 11. Diode VF vs. forward current AM17148v1 VF (V) TJ= - 40C VCE= 5V TJ= 25C 2.8 200 2.4 150 2 100 1.6 25C 50 1.2 175 C 175 C - 40 C 0 6 7 8 9 10 11 VGE (V) Figure 12. Normalized VGE(th) vs. junction temperature VGE(th) AM17149v1 norm VCE= VGE IC= 1 mA 1.1 0.8 10 30 50 70 90 110 IF (A) Figure 13. Normalized V(BR)CES vs. junction temperature AM17150v1 V(BR)ces norm IC = 2 mA 1.1 1.0 0.9 1.0 0.8 0.7 0.6 -50 -25 0.9 0 25 50 75 100 125 150 175 TJ (C) -50 -25 0 DocID024154 Rev 7 25 50 75 100 125 150 175 TJ (C) 7/20 Electrical characteristics STGW60V60DF, STGWA60V60DF, STGWT60V60DF Figure 14. Capacitance variations AM17151v1 C (pF) Figure 15. Gate charge vs. gate-emitter voltage AM17152v1 VGE (V) C ies 10000 VCC = 480V IC = 60A 16 14 C oes 12 1000 10 C res 8 6 100 4 f = 1MHz, VGE =0 2 10 0.1 1 10 VCE (V) Figure 16. Switching energy vs. collector current 4000 0 100 300 Qg (nC) Figure 17. Switching energy vs. gate resistance AM17154v1 E (J) 4500 4000 VCC 400V, VGE= 15V, VCC=400V, VGE = 15V, IC = 60 A, TJ = 175 C Rg=4.7, TJ = 175C 3500 EON 3500 3000 3000 2500 2500 EON 2000 2000 1500 1500 1000 1000 E OFF 500 500 0 0 200 AM17153v1 E (J) 4500 0 EOFF 0 10 20 30 40 10 20 30 40 50 60 70 80 90 100 110120 Ic (A) Figure 18. Switchng energy vs.junction temperature Figure 19. Switching energy vs. collector emitter voltage AM17156v1 E (J) AM17155v1 E (J) 2000 1500 1400 1300 RG () VGE = 15V, TJ = 175C IC = 60 A, Rg = 4.7 E ON 1800 VCC =400V, VGE = 15V, IC = 60 A, Rg = 4.7 1600 1200 1400 1100 E ON 1000 1200 E OFF 900 1000 800 800 700 E OFF 600 600 500 400 25 8/20 400 150 50 75 100 125 150 TJ (C) DocID024154 Rev 7 200 250 300 350 400 450 Vce (V) STGW60V60DF, STGWA60V60DF, STGWT60V60DF Electrical characteristics Figure 20. Switching times vs. collector current Figure 21. Switching times vs. gate resistance AM17157v1 t(ns) AM17159v1 t(ns) VCC = 400V, VGE = 15V, Tj =175C, Rg = 4.7 VCC= 400V, VGE = 15V, Tj =175C Ic = 60 A 1000 tdoff t doff tr 100 tdon tr t don 100 tf tf 10 10 0 20 40 60 80 100 Ic (A) Figure 22. Reverse recovery current vs. diode current slope AM17158v1 Irm (A) 0 10 20 30 40 Rg () Figure 23. Reverse recovery time vs. diode current slope AM17160v1 trr (ns) Vr = 400 V, IF = 60 A Vr = 400V, IF = 60 A 50 200 40 150 175C 175 C 30 100 20 TJ=25C 50 10 0 0 500 1000 1500 2000 di/dt (A/s) Figure 24. Reverse recovery charge vs. diode current slope AM17161v1 Qrr (nC) Vr = 400V, IF = 60 A 0 TJ=25C 0 1000 1500 2000 di/dt (A/s) Figure 25. Reverse recovery energy vs. diode current slope Err (J) AM17162v1 VCC = 400V, VGE = 15V, IF = 60A 1400 2500 500 1200 2000 175C 175 C 1000 1500 800 600 1000 TJ=25C 400 500 200 TJ=25C 0 0 500 1000 1500 2000 di/dt (A/s) 0 0 DocID024154 Rev 7 500 1000 1500 2000 2500 3000 di/dt (A/s) 9/20 Electrical characteristics STGW60V60DF, STGWA60V60DF, STGWT60V60DF Figure 26. Thermal data for IGBT ZthTO2T_A K d=0.5 0.2 0.1 10-1 0.05 0.02 0.01 Single pulse -2 10 10-5 10-4 10-3 10-2 10-1 Figure 27. Thermal data for diode 10/20 DocID024154 Rev 7 tp (s) STGW60V60DF, STGWA60V60DF, STGWT60V60DF 3 Test circuits Test circuits Figure 28. Test circuit for inductive load switching $ & Figure 29. Gate charge test circuit 9&& $ 9 N * ( % % ) & * N Q) / ) 5* 9&& ) 9L9*0$; '87 ) ( ,* &2167 '87 N 9* N N 3: $0 Y Figure 30. Switching waveform $0Y Figure 31. Diode recovery time waveform GLGW 4UU 9* WUU ,) WV WI WU 9RII WFURVV ,& W' RQ WRQ W' RII WU ,RQ WRII W ,550 ,550 9550 WI GYGW $0Y DocID024154 Rev 7 $0Y 11/20 Package information 4 STGW60V60DF, STGWA60V60DF, STGWT60V60DF Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 12/20 DocID024154 Rev 7 STGW60V60DF, STGWA60V60DF, STGWT60V60DF 4.1 Package information TO-247 package information Figure 32. TO-247 package outline B+ DocID024154 Rev 7 13/20 Package information STGW60V60DF, STGWA60V60DF, STGWT60V60DF Table 8. TO-247 package mechanical data mm. Dim. Min. Typ. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 14/20 Max. 5.60 18.50 P 3.55 3.65 R 4.50 5.50 S 5.30 5.50 DocID024154 Rev 7 5.70 STGW60V60DF, STGWA60V60DF, STGWT60V60DF 4.2 Package information TO-247 long leads package information Figure 33. TO-247 long leads package outline B$B) DocID024154 Rev 7 15/20 Package information STGW60V60DF, STGWA60V60DF, STGWT60V60DF Table 9. TO-247 long leads package mechanical data mm Dim. Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 D 20.90 21.00 21.10 E 15.70 15.80 15.90 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 5.34 5.44 5.54 L 19.80 19.92 20.10 L1 16/20 4.30 P 3.50 Q 5.60 S 6.05 3.60 3.70 6.00 6.15 DocID024154 Rev 7 6.25 STGW60V60DF, STGWA60V60DF, STGWT60V60DF 4.3 Package information TO-3P package information Figure 34. TO-3P package outline 8045950_A DocID024154 Rev 7 17/20 Package information STGW60V60DF, STGWA60V60DF, STGWT60V60DF Table 10. TO-3P mechanical data mm Dim. Min. Typ. A 4.60 5 A1 1.45 1.50 1.65 A2 1.20 1.40 1.60 b 0.80 1 1.20 b1 1.80 2.20 b2 2.80 3.20 c 0.55 0.60 0.75 D 19.70 19.90 20.10 D1 E 13.90 15.40 15.80 E1 13.60 E2 9.60 e 5.15 5.45 5.75 L 19.50 20 20.50 L1 18/20 Max. 3.50 L2 18.20 oP 3.10 18.40 18.60 3.30 Q 5 Q1 3.80 DocID024154 Rev 7 STGW60V60DF, STGWA60V60DF, STGWT60V60DF 5 Revision history Revision history Table 11. Document revision history Date Revision 15-Jan-2013 1 Changes Initial release. Added: - New order code STGWT60V60DF and new package mechanical data TO-3P Table 9 on page 16, Figure 33 on page 15. - Section 2.1: Electrical characteristics (curves) on page 6. 23-Apr-2013 2 04-Jun-2013 3 Updated Table 4: Static characteristics and Figure 12 on page 7. Document status changed from preliminary to production data. 21-Jun-2013 4 Updated Figure 3: Collector current vs. temperature case. 12-Jul-2013 5 Updated RthJC value for Diode in Table 3: Thermal data. 21-Oct-2013 6 Updated title, features and description in cover page. 7 Added part number STGWA60V60DF and TO-247 long leads package information. Updated Table 2 Table 4 and Table 6. Updated Figure 10: Transfer characteristics. Minor text changes. 28-Sep-2016 DocID024154 Rev 7 19/20 STGW60V60DF, STGWA60V60DF, STGWT60V60DF IMPORTANT NOTICE - PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST's terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers' products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. (c) 2016 STMicroelectronics - All rights reserved 20/20 DocID024154 Rev 7