This is information on a product in full production.
September 2016 DocID024154 Rev 7 1/20
20
STGW60V60DF, STGWA60V60DF
STGWT60V60DF
Trench gate field-stop IGBT, V series
600 V, 60 A very high speed
Datasheet
-
production da ta
Figure 1. Internal schematic diagram
Features
•Maximum junction temperature: T
J
= 175 °C
•Tail-less switching off
•V
CE(sat)
= 1.85 V (typ.) @ I
C
= 60 A
•Tight parameter distribution
•Safe paralleling
•Low thermal resistance
•Very fast soft recovery antiparallel diode
Applications
•Photovoltaic inverters
•Uninterrup tib le powe r suppl y
•Welding
•Power factor correction
•Very high frequency converters
Description
These devices are IGBTs developed using an
advanced proprietary trench gate field-stop
structure. These devices are part of the V series
of IGBTs, which represents an optimum
compromise between conduction and switching
losses to maximize the efficiency of very high
frequency converters. Furthermore, a positive
V
CE(sat)
temperature coef ficient and very tight
pa rameter distribution result in safer p aralleling
operation.
C (2 or TAB)
G (1)
E (3)
TO-247
1
2
3
TO-3P
12
3
TAB
TO-247 long lead s
Table 1. Device summary
Order code Marking Package Packing
STGW60V60DF GW60V60DF TO-247 Tube
STGWA60V60DF G60V60DF TO-247 long leads Tube
STGWT60V60DF GWT60V60DF TO-3P Tube
www.st.com
Contents STGW60V60DF, STGWA60V60DF, STGWT60V60DF
2/20 DocID024154 Rev 7
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Elect rical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.1 T O-247 package informati on . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.2 T O-247 long leads package info rmation . . . . . . . . . . . . . . . . . . . . . . . . . 15
4.3 T O-3P pac k age information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
DocID024154 Rev 7 3/20
STGW60V60DF, STGWA60V60DF, STGWT60V60DF Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum r a tings
Symbol Parameter Value Unit
V
CES
Collector-emitter voltage (V
GE
= 0) 600 V
I
C
Continu ous collec tor current at T
C
= 25 °C 80
(1)
1. Current level is limited by bond wires
A
I
C
Continu ous collec tor current at T
C
= 100 °C 60 A
I
CP(2)
2. Pulse width limited by maximum junction temperature.
Pulsed collector current 240 A
V
GE
Gate-emitter voltage ±20 V
I
F
Continuous forward current at T
C
= 25 °C 80
(1)
A
I
F
Continuous forward current at T
C
= 100 °C 60 A
I
FP(2)
Pulsed forward current 240 A
P
TOT
Total dissipation at T
C
= 25 °C 375 W
T
STG
Storage temperature range - 55 to 150 °C
T
J
Operating junction temperature range - 55 to 175 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJC
Thermal resis t an ce jun cti on -cas e IGBT 0.4 °C/W
R
thJC
Thermal resis t an ce jun cti on -cas e dio de 1.14 °C/W
R
thJA
Thermal resistance junction-ambient 50 °C/W
Electrical characteristics STGW60V60DF, STGWA60V60DF, STGWT60V60DF
4/20 DocID024154 Rev 7
2 Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)CES
Collector-emitter
breakdown voltage
(V
GE
= 0) I
C
= 2 mA 600 V
V
CE(sat)
Collect or-emitter sat uration
voltage
V
GE
= 15 V, I
C
= 60 A 1.85 2.3
V
V
GE
= 15 V, I
C
= 60 A
T
J
= 125 °C 2.15
V
GE
= 15 V, I
C
= 60 A
T
J
= 175 °C 2.35
V
F
Forward on-voltage
I
F
= 60 A 2 2.6 V
I
F
= 60 A T
J
= 125 °C 1.7 V
I
F
= 60 A T
J
= 175 °C 1.6 V
V
GE(th)
Gate threshold voltage V
CE
= V
GE
, I
C
= 1 mA 5 6 7 V
I
CES
Collector cut-off current
(V
GE
= 0) V
CE
= 600 V 25 µA
I
GES
Gate-emitter leakage
current (V
CE
= 0) V
GE
= ± 20 V ±250 nA
Table 5. Dynamic characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
ies
Input cap ac itance
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
-8000- pF
C
oes
Output capacitance - 280 - pF
C
res
Reverse transfer
capacitance -170-pF
Q
g
Total gate charge V
CC
= 480 V, I
C
= 60 A,
V
GE
= 15 V, see Figure 29
-334-nC
Q
ge
Gate-emitter charge - 130 - nC
Q
gc
Gate- collector charge - 58 - nC
DocID024154 Rev 7 5/20
STGW60V60DF, STGWA60V60DF, STGWT60V60DF Electrical characteristics
Table 6. IGBT switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 60 A,
R
G
= 4.7 Ω, V
GE
= 15 V,
see Figure 28
-60-ns
t
r
Current rise time - 20 - ns
(di/dt)
on
Turn-on current slope - 2365 - A/µs
t
d(off)
Tu rn-off delay time - 208 - ns
t
f
Current fall time - 14 - ns
E
on(1)
1. Including the reverse recovery of the diode.
Turn-on switching energy - 0.75 - mJ
E
off(2)
2. Including the tail of the collector current.
Turn-off switching energy - 0.55 - mJ
E
ts
Total switching energy - 1.3 - mJ
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 60 A,
R
G
= 4.7 Ω, V
GE
= 15 V,
T
J
= 175 °C, see Figure 28
-57-ns
t
r
Current rise time - 23 - ns
(di/dt)
on
Turn-on current slope - 2191 - A/µs
t
d(off)
Tu rn-off delay time - 216 - ns
t
f
Current fall time - 27 - ns
E
on(1)
Turn-on switching energy - 1.5 - mJ
E
off(2)
Tu rn-off switching energy - 0.8 - mJ
E
ts
Total switching energy - 2.3 - mJ
Table 7. Diode switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
rr
Reverse recovery time
I
F
= 60 A, V
R
= 400 V,
V
GE
= 15 V,
di
F
/dt = 1000 A/µs
see Figure 28
-74-ns
Q
rr
Reverse recovery charge - 703 - nC
I
rrm
Reverse recovery current - 19 - A
dI
rr/
/dt Peak rate of fall of reverse
recovery current during t
b
- 714 - A/µs
E
rr
Reverse recovery energy - 184 - µJ
t
rr
Reverse recovery time
I
F
= 60 A, V
R
= 400 V,
V
GE
= 15 V
di
F
/dt = 1000 A/µs
T
J
= 175 °C, see Figure 28
- 131 - ns
Q
rr
Reverse recovery charge - 2816 - nC
I
rrm
Reverse recovery current - 43 - A
dI
rr/
/dt Peak rate of fall of reverse
recovery current during t
b
- 404 - A/µs
E
rr
Reverse recovery energy - 821 - µJ
Electrical characteristics STGW60V60DF, STGWA60V60DF, STGWT60V60DF
6/20 DocID024154 Rev 7
2.1 Electrical chara cteristics (c urves)
Figure 2. Power dissipation vs. case
temperature Figure 3. Collector current vs. temperature case
Figure 4. Output characteristics @ 25 °C Figure 5. Output characteristics @ 175 °C
Figure 6. V
CE(SAT)
vs. junction temperature Figure 7. V
CE(SAT)
vs. collector current
AM17139v1
0
50
100
150
200
250
300
350
0 25 50 75 100 125 150 175
P
tot
(W)
T
C
(°C)
AM17140v1
0
10
20
30
40
50
60
70
80
0255075100125150175
IC(A)
TC(°C)
VGE > 15 V, TJ < 175 °C
__
AM17141v1
0
50
100
150
200
01234
Ic (A)
V
CE(V)
9 V
11 V
13 V
VGE=15 V
7 V
T
J
=25°C
AM17142v1
0
50
100
150
200
01234
I
C
(A)
V
CE
(V)
V
GE
=15 V
T
J
=175 °C
9 V
11 V
7 V
13 V
AM17143v1
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
-50 -25 0 25 50 75 100 125 150 175
V
CE(sat)
(V)
T
J
(ºC)
I
C
= 120 A
I
C
= 60 A
I
C
= 30 A
V
GE
=15 V
AM17144v1
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
10 20 30 40 50 60 70 80 90 100 110 120
V
CE(sat)
(V)
I
C
(A)
T
J
= - 40 °C
T
J
= 25 °C
T
J
= 175 °C
V
GE
= 15 V
DocID024154 Rev 7 7/20
STGW60V60DF, STGWA60V60DF, STGWT60V60DF Electrical characteristics
Figure 8. Collector current vs. switching
frequency Figure 9. Safe operating area
Figure 10. Transfer characteristics Figure 11. Diode V
F
vs. forward curren t
Figure 12. Normalized V
GE(th)
vs. junction
temperature Fig ure 13. Normali ze d V
(BR)CES
vs. junction
temperature
AM17145v1
0
10
20
30
40
50
60
70
80
90
100
110
110
Ic [A]
f [kHz]
rectangular current shape,
(duty cycle=0.5, V
CC
= 400V, R
G
=4.7Ω,
V
GE
= 0/15 V, T
J
=175°C)
Tc=80°C
Tc=100 °C
AM17146v1
0.01
0.1
1
10
100
110100
IC(A)
VCE (V)
(single pulse T
C
=25 °C,
T
J
<=175 °C; V
GE
=15 V)
1 μs
100 μs
1 ms
AM17146v1
175 °C
0
50
100
150
200
67891011
I
C
(A)
V
GE
(V)
- 40 °C
T
J
= 25°C
V
CE
= 5V
V
CE
= V
GE
I
C
= 1 mA
AM17149v1
0.6
0.7
0.8
0.9
1.0
1.1
-50 -25 0 25 50 75 100 125 150 175
V
GE(th)
norm
T
J
(ºC)
AM17150v1
0.9
1.0
1.1
-50 -25 0 25 50 75 100 125 150 175
V(BR)ces
norm
T
J(ºC)
I
C
= 2 mA
Electrical characteristics STGW60V60DF, STGWA60V60DF, STGWT60V60DF
8/20 DocID024154 Rev 7
Figure 14. Capacitance variations Figure 15. Gate charge vs. gate-emitter voltage
Figure 16. Switching energy vs. collector
current Figure 17. Switching energy vs. gate resistance
Figure 18. Switchng energy vs.junction
temperature Figure 19. Switching energy vs. collector
emitter voltage
AM17151v1
10
100
1000
10000
0.1 1 10
C (pF)
V
CE
(V)
C
res
C
oes
C
ies
f= 1MHz, V
GE
=0
AM17152v1
0
2
4
6
8
10
12
14
16
0100200300
V
GE
(V)
Qg (nC)
V
CC
= 480V
I
C
= 60A
AM17153v1
0
500
1000
1500
2000
2500
3000
3500
4000
4500
0 102030405060708090100110120
E (μJ)
Ic (A)
E
ON
E
OFF
V
CC
400V, V
GE
= 15V,
Rg=4.7Ω, T
J
= 175°C
AM17154v1
500
1000
1500
2000
2500
3000
3500
4000
4500
010203040
E (μJ)
R
G
(Ω)
E
ON
E
OFF
V
CC
=400V, V
GE
= 15V,
I
C
= 60 A, T
J
= 175 °C
AM17155v1
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
25 50 75 100 125 150
E (μJ)
T
J
(ºC)
E
ON
E
OFF
V
CC
=400V, V
GE
= 15V,
I
C
= 60 A, Rg = 4.7
Ω
AM17156v1
400
600
800
1000
1200
1400
1600
1800
2000
150 200 250 300 350 400 450
E (μJ)
Vce (V)
E
ON
E
OFF
V
GE
= 15V, T
J
= 175°C
I
C
= 60 A, Rg = 4.7
Ω
DocID024154 Rev 7 9/20
STGW60V60DF, STGWA60V60DF, STGWT60V60DF Electrical characteristics
Figure 20. Switching times vs. collector current Figure 21. Switching times vs. gate resistance
Figure 22. Reverse recovery current vs. diode
current slope Figure 23. Reverse recovery time vs. diode
current slope
Figure 24. Reverse recovery charge vs. diode
current slope Figure 25. Reverse recovery energy vs. diode
current slope
AM17157v1
10
100
020406080100
t(ns)
Ic (A)
t
f
t
doff
VCC = 400V, V
GE = 15V,
Tj =175°C, Rg = 4.7 Ω
t
r
t
don
AM17159v1
10
100
1000
010203040
t(ns)
Rg (Ω)
t
f
t
doff
V
CC
= 400V, V
GE
= 15V,
Tj =175°C Ic = 60 A
tr
tdon
AM17158v1
0
10
20
30
40
50
0 500 1000 1500 2000
I
rm
(A)
di/dt (A/μs)
Vr= 400 V, I
F
= 60 A
T
J
=25°C
175°C
AM17160v1
0
50
100
150
200
0 500 1000 1500 2000
trr (ns)
di/dt (A/μs)
V
r
= 400V, I
F
= 60 A
175 °C
T
J
=25°C
AM17161v1
0
500
1000
1500
2000
2500
0 500 1000 1500 2000
Qrr (nC)
di/dt (A/μs)
Vr= 400V, IF= 60 A
175 °C
T
J
=25°C
AM17162v1
0
200
400
600
800
1000
1200
1400
0 500 1000 1500 2000 2500 3000
Err
(μJ)
di/dt (A/μs)
V
CC = 400V, VGE = 15V, IF= 60A
175°C
T
J
=25°C
Electrical characteristics STGW60V60DF, STGWA60V60DF, STGWT60V60DF
10/20 DocID024154 Rev 7
Figure 26. Therma l data for IGBT
Figure 27. Thermal data for diode
ZthTO2T_A
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
10
-2
10
-1
K
Single pulse
d=0.5
0.01
0.02
0.05
0.1
0.2
DocID024154 Rev 7 11/20
STGW60V60DF, STGWA60V60DF, STGWT60V60DF Test circuits
3 Test circuits
Figure 28. Test circuit for inductive load
switching Figure 29. Gate charge test circuit
Figure 30. Switching waveform Figure 31. Diode recovery time waveform
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Package information STGW60V60DF, STGWA60V60DF, STGWT60V60DF
12/20 DocID024154 Rev 7
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST tradema rk .
DocID024154 Rev 7 13/20
STGW60V60DF, STGWA60V60DF, STGWT60V60DF Package information
4.1 TO-247 package information
Figure 32. TO-247 package outline
B+
Package information STGW60V60DF, STGWA60V60DF, STGWT60V60DF
14/20 DocID024154 Rev 7
Table 8. TO-247 package mechanical data
Dim. mm.
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.30 5.50 5.70
DocID024154 Rev 7 15/20
STGW60V60DF, STGWA60V60DF, STGWT60V60DF Package information
4.2 TO-247 long leads package information
Figure 33. TO-247 long leads package outl ine
B$B)
Package information STGW60V60DF, STGWA60V60DF, STGWT60V60DF
16/20 DocID024154 Rev 7
Table 9. TO-247 long leads package mechanical data
Dim. mm
Min. Typ. Max.
A4.905.005.10
A1 2.31 2.41 2.51
A2 1.90 2.00 2.10
b1.16 1.26
b2 3.25
b3 2.25
c0.59 0.66
D 20.90 21.00 21.10
E 15.70 15.80 15.90
E2 4.90 5.00 5.10
E3 2.40 2.50 2.60
e5.345.445.54
L 19.80 19.92 20.10
L1 4.30
P3.503.603.70
Q5.60 6.00
S6.056.156.25
DocID024154 Rev 7 17/20
STGW60V60DF, STGWA60V60DF, STGWT60V60DF Package information
4.3 TO-3P package information
Figure 34. TO-3P package outline
8045950_A
Package information STGW60V60DF, STGWA60V60DF, STGWT60V60DF
18/20 DocID024154 Rev 7
Table 10. TO-3P mechanical data
Dim. mm
Min. Typ. Max.
A4.60 5
A1 1.45 1.50 1.65
A2 1.20 1.40 1.60
b 0.80 1 1.20
b1 1.80 2.20
b2 2.80 3.20
c 0.55 0.60 0.75
D 19.70 19.90 20.10
D1 13.90
E 15.40 15.80
E1 13.60
E2 9.60
e 5.15 5.45 5.75
L 19.50 20 20.50
L1 3.50
L2 18.20 18.40 18.60
øP 3.10 3.30
Q5
Q1 3.80
DocID024154 Rev 7 19/20
STGW60V60DF, STGWA60V60DF, STGWT60V60DF Revision history
5 Revision history
Table 11. Document revision history
Date Revision Changes
15-Jan-2013 1 Initial release.
23-Apr-2013 2
Added:
– New order code STGWT60V60DF and new package
mechanical data TO-3P Table 9 on page 16, Figure 33
on page 15.
–Section 2.1: Electrical characteristics (curves) on
page 6.
04-Jun-2013 3 Updated Table 4: Static characteristics
and
Figure 12 on page 7
.
Document status changed from preliminary to production data.
21-Jun-2013 4 Updated Figure 3: Col lector current vs. temperature cas e
.
12-Jul-201 3 5 Updated R
thJC
value for Diode in Table 3: Thermal data
.
21-Oct-2013 6 Updated title, features and description in cover page.
28-Sep-2016 7
Added part number STGWA60V60DF and TO-247 long leads
pack age inform ation.
Updated Table 2 Table 4 and Table 6.
Updated Figure 10: Transfer characteri sti cs .
Minor text chan ges .
STGW60V60DF, STGWA60V60DF, STGWT60V60DF
20/20 DocID024154 Rev 7
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