RK7002
Transistors
Rev.A 1/3
Interface and switching (60V, 115mA)
RK7002
zStructure zDimensions (Unit : mm)
Silicon N-channel
MOSFET
zFeatures
1) Low on-resistance.
2) High-speed switching.
3) Low-voltage drive(5V).
zA pplication
Switching
zEquivalent circuit
zA bsolute maximum ratings (Ta=25°C)
Parameter Symbol Limits Unit
Drain-source voltage
Gate-source voltage
Drain current
Reverse drain
current
Total power dissipation
Channel temperature
Storage temperature
V
DSS
60 V
V
GSS
±20 V
Continuous
Pulsed
Continuous
Pulsed
I
D
115 mA
I
DP∗1
800 mA
I
DR
115 mA
I
DRP∗1
800 mA
P
D∗2
225 mW
Tch 150 °C
Tstg −55 to +150 °C
∗
1 Pw≤10µs, Duty cycle≤1%
∗
2 When mounted on a 1x0.75x0.062 inch glass epoxy board.
ROHM
: SST3
EIAJ : SOT-23
(1) Source
(2) Gate
(3) Drain
Abbreviated symbol : RKM
Drain
Gate
Source
∗
A protection diode has been built in between the
gate and the source to protect against static
electricity when the product is in use.
Use the protection circuit when fixed voltages
are exceeded.
∗ Gate
Protection
Diode
RK7002
Transistors
Rev.A 2/3
zElectrical characteristics (Ta=25°C)
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Turn-off delay time
Test Conditions
V
GS
= 0V
f= 1MHz
V
DS
= 25V
I
D
= 0.2A, V
DD
30V, V
GS
=10V,
R
L
=150Ω, R
G
=10Ω
µA
pF
Ω
mS
Unit
V
µA
V
pF
pF
ns
ns
I
D
= 0.5A, V
GS
=10V
−
−
60
−
1.0
−
80
Min.
−
−
−
−
25
−
−
−
1.85
−
−
Typ.
10
3.0
12
20
50
±10
−
1.0
2.5
7.5
I
D
= 0.05A, V
GS
= 5V−−7.5
−
Max.
25
5.0
20
30
I
D
= 0.2A, V
DS
= 10V
I
D
=10µA, V
GS
=0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= 60V, V
GS
= 0V
V
DS
= 10V, I
D
= 1mA
I
GSS
I
DSS
Y
fs
∗
C
iss
Symbol
C
oss
C
rss
V
(BR)DSS
V
GS (th)
R
DS (on)
t
d (on)
∗
t
d (off)
∗
∗
Pw≤300µs, Duty cycle≤1%
∗
Static drain-source on-state
resistance
zElectrical characteristic curves
0.5
0.4
0.3
0.2
0.1
0012345
DRAIN CURRENT : I
D (A)
DRAIN-SOURCE VOLTAGE : V
DS (V)
8V
6V
5V
4V
V
GS
=3V
10V
Fig.1 Typical Output Characteristics
GATE-SOURCE VOLTAGE : V
GS (V)
012 435678
DRAIN CURRENT : I
D (A)
0.001
0.1
0.01
1
Ta=−25°C
25°C
75°C
125°C
V
DS
=10V
Pulsed
Fig.2 Typical Transfer Characteristics
CHANNEL TEMPERATURE : Tch (°C)
GATE THRESHOLD VOLTAGE : V
GS
(th)
(V)
1
1.5
2.5
2
3
0.5
0
−50 −25
0 25 50 75 100 125 150
V
DS
=10V
I
D
=1mA
Pulsed
Fig.3 Gate Threshold Voltage vs.
Channel Temperature
DRAIN CURRENT : I
D (A)
100
10
1
0.1
0.001 0.01 0.1 1
V
GS
=10V
Pulsed
Ta=125°C
75°C
25°C
−25°C
ON-STATE RESISTANCE : R
DS(on) (Ω)
STATIC DRAIN-SOURCE
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current( Ι )
DRAIN CURRENT : I
D (A)
100
10
1
0.1
0.001 0.01 0.1 1
V
GS
=5V
Pulsed
Ta=125°C
75°C
25°C
−25°C
ON-STATE RESISTANCE : R
DS(on) (Ω)
STATIC DRAIN-SOURCE
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current (ΙΙ)
GATE-SOURCE VOLTAGE : V
GS (V)
7
6
5
4
2
3
1
00 5 10 2015
I
D
=57.5mA
ON-STATE RESISTANCE : R
DS(on) (Ω)
STATIC DRAIN-SOURCE
Ta=25°C
Pulsed
115mA
Fig.6 Static Drain-Source On-State
Resistance vs. Gate-Source Voltage
RK7002
Transistors
Rev.A 3/3
CHANNEL TEMPERATURE : Tch (°C)
2
3
5
4
6
1
0
−50 −25
0 25 50 75 100 125 150
VGS=10V
Pulsed
ID =115mA
57.5mA
ON-STATE RESISTANCE : RDS(on) (Ω)
STATIC DRAIN-SOURCE
Fig.7 Static Drain-Source On-State
Resistance vs. Channel Temperature
0.01
0.1
1
0.001
0 0.5 1.0 1.5
REVERSE DRAIN CURRENT : I
DR
(A)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
Ta=125°C
75°C
25°C
−25°C
V
GS
=0V
Pulsed
Fig.8 Reverse Drain Current vs.
Source-Drain Voltage ( Ι )
0 0.5 1.0 1.5
REVERSE DRAIN CURRENT : I
DR
(A)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
V
GS
=10V
0V
0.01
0.1
0.5
0.05
1Ta=25°C
Pulsed
Fig.9 Reverse Drain Current vs.
Source-Drain Voltage (ΙΙ)
DRAIN CURRENT : I
D (A)
1
0.1
0.01
0.001
0.001
0.01 0.1
1
V
GS
=10V
Pulsed
75°C
125°C
Ta=−25°C
25°C
FORWARD TRANSFER ADMITTANCE
:
Y
fs
(S)
Fig.10 Reverse Drain Current vs.
Source-Drain Voltage (ΙΙ)
DRAIN-SOURCE VOLTAGE : V
DS
(V)
0.1 1 10 100
C
iss
C
oss
C
rss
1
100
10
1000
CAPACITANCE : C (pF)
Ta=25°C
V
GS
=0V
f=1MHz
Pulsed
Fig.11 Typical Capacitance vs.
Drain-Source Voltage
1000
100
10
1
0.001 0.01 0.1 1
SWITCHING TIME : t (
ns)
DRAIN CURRENT : I
D
(A)
Ta=25°C
V
DD
=30V
V
GS
=10V
R
G
=10Ω
Pulsed
t
f
t
r
t
d(off)
t
d(on)
Fig.12 Switching Characteristics
(See Figure. 13 and 14 for
measurement circuits)
zMeasurement circuit
Fig.13 Switching Time Test Circuit
V
GS
R
G
V
DS
D.U.T.
I
D
R
L
V
DD
90% 50%
10%
90%
10%
50%
Pulse Width
10%
V
GS
V
DS
90% tf
toff
td(off)
tr
ton
td(on)
Fig.14 Switching Time Waveforms
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Appendix1-Rev2.0
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Copyright © 2008 ROHM CO.,LTD.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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FAX : +81-75-315-0172
Appendix
