RFSW2043D RFSW2043D DC to 20GHz GaAs SPDT Switch DC TO 20GHz GaAs SPDT SWITCH Package: Die, 1.33mm x 1.11mm x 0.10mm Product Description Features RFMD's RFSW2043D is an absorptive SPDT GaAs microwave monolithic integrated circuit (MMIC) switch designed using the RFMD FD05 0.5m switch process. The RFSW2043D is developed for broadband communications, instrumentation and electronic warfare. RFSW2043D 50O VB Optimum Technology Matching(R) Applied RF1 GaAs MESFET RFC InGaP HBT SiGe BiCMOS Applications GaAs HBT Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS 50O VA Si BJT Low Insertion Loss: 2.3dB at 20GHz High Isolation: 32dB at 20GHz 21nS Switching Speed GaAs pHEMT Technology Broadband Communications Test Instrumentation Fiber Optics Military Aerospace RF2 GaN HEMT InP HBT RF MEMS LDMOS Parameter Operating Frequency Insertion Loss (0GHz to 5GHz) Insertion Loss (5GHz to 10GHz) Insertion Loss (10GHz to 15GHz) Insertion Loss (15GHz to 20GHz) Isolation (DC to 5GHz) Isolation (5GHz to 10GHz) Isolation (10GHz to 15GHz) Isolation (15GHz to 20GHz) Input Return Loss (DC to 20GHz) Output Return Loss (DC to 20GHz) IIP3 IIP2 Switching Speed Control Current Control Voltage Min. Specification Typ. DC 40 34 32 30 11 11 11 36 66 -3 1.3 1.2 1.4 2.3 42 36 33 32 15 14 14 40 68 21 28 -5 Max. 20 2 2.3 2.7 3.1 Unit GHz dB dB dB dB Condition ON State OFF State 25 50 -8 dB dB dB dBm dBm ns uA VDC ON State ON State OFF State 100MHz spacing 2dBm input 50% control to 90% RF Sum of all control lines Electrical Specifications, TA = +25C, VCTRL = -5VDC RF MICRO DEVICES(R), RFMD(R), Optimum Technology Matching(R), Enabling Wireless ConnectivityTM, PowerStar(R), POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. (c)2006, RF Micro Devices, Inc. DS120227 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 6 RFSW2043D Absolute Maximum Ratings Parameter Rating Unit Drain Bias Voltage (VCTRL) -10 VDC RF Input Port Power (Any State) +30 dBm RF Output Port Power (ON State only) +30 dBm RF Output Port Power (OFF State only) +21 dBm Storage Temperature -40 to +150 C Operating Temperature -40 to +85 C ESD JESD22-A114 Human Body Model (HBM) Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. Class 1A (All Pads) Typical Electrical Performance On State Input Return Loss over Temp (High = -5V, Low = 0V) Isolation over Temp (High = -5V, Low = 0V) 0 0 -10 -2.5 -20 -5 -30 -7.5 25C dB -40 85C -40C -50 25C dB -10 85C -40C -12.5 -60 -15 -70 -17.5 -20 -80 0 5 10 15 20 25 0 5 10 Insertion Loss over Temp (High = -5V, Low = 0V) 20 25 Off State Output Return Loss over Temp (High = -5V, Low = 0V) 0 0 -0.5 -3.5 -1 -7 -1.5 25C dB -2 85C -40C -2.5 -10.5 85C -40C -17.5 -21 -3.5 -24.5 -4 25C dB -14 -3 -28 0 5 10 15 GHz 2 of 6 15 GHz GHz 20 25 0 5 10 15 20 25 GHz 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS120227 RFSW2043D IIP3 (Low = 0V, 25C, +2dBm input) IIP3 (High = -5V, Low = 0V, +2dBm input) 44 45 43 44 42 43 41 -9V dBm 40 -5V 42 -40C dBm 41 25C -3V 39 85C 40 38 39 37 38 36 37 0 5 10 15 20 25 0 5 10 GHz 15 20 25 GHz IIP2 (Low = 0V, 25C, +2dBm input) IIP2 (High = -5V, Low = 0V, +2dBm input) 76 74 74 73 72 72 70 71 -40C -9V dBm 68 66 -5V dBm 70 -3V 69 25C 85C 68 64 67 62 66 0 5 10 15 20 25 60 0 5 10 15 20 25 GHz GHz DS120227 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3 of 6 RFSW2043D Die Layout 1203 804 654 504 106 VB VA 108 1010 550 GND 400 VA VB VA 250 GND 138 400 GND RF2 RF1 250 957 862 1010 RFSW2043D GND VB 862 GND RFin GND VA RF bondpads are 150x88 All other bondpads are 88x88 All units are in um 461 600 738 1200 4 of 6 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS120227 RFSW2043D Pad RFIN RF1, RF2 Description Interface Schematic RF input. This pad is DC coupled and matched to 50 from DC to 20GHz. 50 microstrip transmission line on 0.127mm (5mil) thick alumina thin film substrate is recommended. RFin RF output. This pad is DC coupled and matched to 50 from DC to 20GHz. 50 microstrip transmission line on 0.127mm (5mil) thick alumina thin film substrate is recommended. RFout 50ohm VA, VB DC control for switch operation. Nominal operating voltage is -5V. 2kohm 3.6pF GND Provides ground patch for probe measurements. Truth Table Control Line VA RF Path VB High Low RFIN to RF1 Low High RFIN to RF2 High = -3V to -8V (-5V nominal), Low = 0, 0.2V Measurement Technique All specifications and typical performances reported in this document were based on data taken with the equipment listed in the stated manner. Data was taken using a temperature controlled probe station utilizing 150um pitch GSG probes. The probes were placed on a ceramic coplanar to microstrip launch. The launch was then wire bonded to the die using two 1 mil bondwires. The spacing between the launch and the die was 200um, and the bondwire loop height was 100um. the thickness of the test interface was 125um (5mil). The calibration included the probes and test interfaces, so that the measurement reference plane was at the point of bondwire attachment. Therefore, all data represents the part and accompanying bondwires. Insertion Loss, Return Loss, and Isolation data were taken using an Agilent E8363B PNA. IIP3 and IIP2 data were taken utilizing a pair of Agilent E8257D signal generators and an Agilent E4446A PSA. DS120227 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 5 of 6 RFSW2043D Preferred Assembly Instructions GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The back of the die is metallized and the recommended mounting method is by the use of conductive epoxy. Epoxy should be applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy onto the top face of the die. Ideally it should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150C for one hour in an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with dry nitrogen. The gold-tin (80% Au 20% Sn) eutectic die attach has a melting point of approximately 280C but the absolute temperature being used depends on the leadframe material used and the particular application. The time at maximum temperature should be kept to a minimum. This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4um diameter gold wire be used. Recommended lead bond technique is thermocompression wedge bonding with 0.001" (25m) diameter wire. Bond force, time stage temperature, and ultrasonics are all critical parameters and the settings are dependent on the setup and application being used. Ultrasonic or thermosonic bonding is not recommended. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimized especially when making RF or ground connections. Handling Precautions To avoid damage to the devices, care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. ESD/MSL Rating These devices should be treated as Class 1A (250V to 500V) using the human body model as defined in JEDEC Standard No. 22-A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. This is an unpackaged part and therefore no MSL rating applies. Ordering Information 6 of 6 Part Number Description Delivery Method RFSW2043DS2 Sample, DC to 20GHz GaAs SPDT Switch Waffle Pack 2 pc RFSW2043DSB Sample, DC to 20GHz GaAs SPDT Switch Waffle Pack 5 pc RFSW2043DSQ Small Quantity, DC to 20GHz GaAs SPDT Switch Waffle Pack 25 pc RFSW2043D DC to 20GHz GaAs SPDT Switch Waffle Pack 100 pc 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Quantity DS120227