Features
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Optimum Technology
Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
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Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
InP HBT
LDMOS
RF MEMS
RFSW2043D
DC TO 20GHz GaAs SPDT SWITCH
RFMD’s RFSW2043D is an absorptive SPDT GaAs microwave monolithic
integrated circuit (MMIC) switch designed using the RFMD FD05 0.5m
switch process. The RFSW2043D is developed for broadband communica-
tions, instrumentation and electronic warfare.
RFC
VA
RF1
VB
RF2
RFSW2043D
50O
50O
Low Insertion Loss: 2.3dB at
20GHz
High Isolation: 32dB at
20GHz
21nS Switching Speed
GaAs pHEMT Technology
Applications
Broadband Communications
Test Instrumentation
Fiber Optics
Military
Aerospace
DS120227
Package: Die, 1.33mm x 1.11mm x 0.10mm
RFSW2043D
DC to 20GHz
GaAs SPDT
Switch
Parameter Specification Unit Condition
Min. Typ. Max.
Operating Frequency DC 20 GHz
Insertion Loss (0GHz to 5GHz) 1.3 2 dB ON State
Insertion Loss (5GHz to 10GHz) 1.2 2.3 dB
Insertion Loss (10GHz to 15GHz) 1.4 2.7 dB
Insertion Loss (15GHz to 20GHz) 2.3 3.1 dB
Isolation (DC to 5GHz) 40 42 OFF State
Isolation (5GHz to 10GHz) 34 36
Isolation (10GHz to 15GHz) 32 33
Isolation (15GHz to 20GHz) 30 32
Input Return Loss (DC to 20GHz) 11 15 dB ON State
ON State
Output Return Loss (DC to 20GHz) 11 14 dB
11 14 dB OFF State
IIP3 36 40 dBm 100MHz spacing 2dBm input
IIP2 66 68 dBm
Switching Speed 21 25 ns 50% control to 90% RF
Control Current 28 50 uA Sum of all control lines
Control Voltage -3 -5 -8 VDC
Electrical Specifications, TA = +25°C, VCTRL = -5VDC
2 of 6 DS120227
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
RFSW2043D
Typical Electrical Performance
Absolute Maximum Ratings
Parameter Rating Unit
Drain Bias Voltage (VCTRL)-10V
DC
RF Input Port Power (Any State) +30 dBm
RF Output Port Power (ON State only) +30 dBm
RF Output Port Power (OFF State
only) +21 dBm
Storage Temperature -40 to +150 °C
Operating Temperature -40 to +85 °C
ESD JESD22-A114 Human Body
Model (HBM) Class 1A (All Pads)
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
-80
-70
-60
-50
-40
-30
-20
-10
0
0 5 10 15 20 25
dB
GHz
Isolation over Temp (High = -5V , Low = 0V)
25C
85C
-40C
-20
-17.5
-15
-12.5
-10
-7.5
-5
-2.5
0
0 5 10 15 20 25
dB
GHz
On State Input Return Loss over Temp (High = -5V, Low = 0V)
25C
85C
-40C
-4
-3.5
-3
-2.5
-2
-1.5
-1
-0.5
0
0 5 10 15 20 25
dB
GHz
Insertion Loss over Temp (High = -5V , Low = 0V)
25C
85C
-40C
-28
-24.5
-21
-17.5
-14
-10.5
-7
-3.5
0
0 5 10 15 20 25
dB
GHz
Off State Output Return Loss over Temp (High = -5V, Low = 0V)
25C
85C
-40C
3 of 6DS120227
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
RFSW2043D
36
37
38
39
40
41
42
43
44
0 5 10 15 20 25
dBm
GHz
IIP3 (Low = 0V, 25C, +2dBm input)
-9V
-5V
-3V
37
38
39
40
41
42
43
44
45
0 5 10 15 20 25
dBm
GHz
IIP3 (High = -5V, Low = 0V, +2dBm input)
-40C
25C
85C
60
62
64
66
68
70
72
74
76
0 5 10 15 20 25
dBm
GHz
IIP2 (Low = 0V, 2 5 C, +2dBm input)
-9V
-5V
-3V
66
67
68
69
70
71
72
73
74
0 5 10 15 20 25
dBm
GHz
IIP2 (High = -5V, Low = 0V, +2dBm input)
-40C
25C
85C
4 of 6 DS120227
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
RFSW2043D
Die Layout
RFin
RF2
RF1
VA VB VA
VB
VA
VB
VA GND GND
GND
GND
GND
GND
138
250
400 862
957
1010
108 461
600
738 1200
250
400
550 862
1010
106 504
654
804 1203
RFSW2043D
A ll o ther bondpads are 88x88
RF bondpads are 150x88
A ll unit s are in um
5 of 6DS120227
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
RFSW2043D
Truth Table
Measurement Technique
All specifications and typical performances reported in this document were based on data taken with the equipment listed in
the stated manner.
Data was taken using a temperature controlled probe station utilizing 150um pitch GSG probes. The probes were placed on a
ceramic coplanar to microstrip launch. The launch was then wire bonded to the die using two 1 mil bondwires. The spacing
between the launch and the die was 200um, and the bondwire loop height was 100um. the thickness of the test interface was
125um (5mil).
The calibration included the probes and test interfaces, so that the measurement reference plane was at the point of bondwire
attachment. Therefore, all data represents the part and accompanying bondwires.
Insertion Loss, Return Loss, and Isolation data were taken using an Agilent E8363B PNA.
IIP3 and IIP2 data were taken utilizing a pair of Agilent E8257D signal generators and an Agilent E4446A PSA.
Pad Description Interface Schematic
RFIN RF input. This pad is DC coupled and matched to 50 from DC to 20GHz. 50 microstrip
transmission line on 0.127mm (5mil) thick alumina thin film substrate is recommended.
RF1,
RF2
RF output. This pad is DC coupled and matched to 50 from DC to 20GHz. 50 microstrip
transmission line on 0.127mm (5mil) thick alumina thin film substrate is recommended.
VA, VB DC control for switch operation. Nominal operating voltage is -5V.
GND Provides ground patch for probe measurements.
Control Line RF Path
VA VB
High Low RFIN to RF1
Low High RFIN to RF2
High = -3V to -8V (-5V nominal), Low = 0, ±0.2V
RFin
RFout
50ohm
2kohm
3.6pF
6 of 6 DS120227
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
RFSW2043D
Preferred Assembly Instructions
GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible.
The back of the die is metallized and the recommended mounting method is by the use of conductive epoxy. Epoxy should be
applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy onto the top face of the die. Ideally
it should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended and for manual dispense
Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150°C for one hour in an oven
especially set aside for epoxy curing only. If possible the curing oven should be flushed with dry nitrogen. The gold-tin (80% Au
20% Sn) eutectic die attach has a melting point of approximately 280°C but the absolute temperature being used depends on
the leadframe material used and the particular application. The time at maximum temperature should be kept to a minimum.
This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4um diameter
gold wire be used. Recommended lead bond technique is thermocompression wedge bonding with 0.001" (25m) diameter
wire. Bond force, time stage temperature, and ultrasonics are all critical parameters and the settings are dependent on the
setup and application being used. Ultrasonic or thermosonic bonding is not recommended. Bonds should be made from the
die first and then to the mounting substrate or package. The physical length of the bondwires should be minimized especially
when making RF or ground connections.
Handling Precautions
To avoid damage to the devices, care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions
should be observed at all stages of storage, handling, assembly, and testing.
ESD/MSL Rating
These devices should be treated as Class 1A (250V to 500V) using the human body model as defined in JEDEC Standard No.
22-A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. This is an unpack-
aged part and therefore no MSL rating applies.
Ordering Information
Part Number Description Delivery Method Quantity
RFSW2043DS2 Sample, DC to 20GHz GaAs SPDT Switch Waffle Pack 2 pc
RFSW2043DSB Sample, DC to 20GHz GaAs SPDT Switch Waffle Pack 5 pc
RFSW2043DSQ Small Quantity, DC to 20GHz GaAs SPDT
Switch Waffle Pack 25 pc
RFSW2043D DC to 20GHz GaAs SPDT Switch Waffle Pack 100 pc
