MMBTA92 / MMBTA93 MMBTA92 / MMBTA93 Surface mount High Voltage Transistors Hochspannungs-Transistoren fur die Oberflachenmontage PNP PNP Version 2005-06-21 1.1 2.9 0.1 0.4 0.1 Type Code 1.3 2.5 max 3 2 1 1.9 Dimensions / Mae [mm] 1=B 2=E 3=C Power dissipation Verlustleistung 250 mW Plastic case Kunststoffgehause SOT-23 (TO-236) Weight approx. - Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) MMBTA92 MMBTA93 Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open - VCEO 300 V 200 V Collector-Base-voltage - Kollektor-Basis-Spannung E open - VCBO 300 V 200 V Emitter-Base-voltage - Emitter-Basis-Spannung C open - VEBO 5V Power dissipation - Verlustleistung Ptot 250 mW 1) Collector current - Kollektorstrom (dc) - IC 500 mA Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Tj TS -65...+150C -65...+150C Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. - ICB0 - ICB0 - - - - 250 nA 250 nA - IEB0 - - 100 nA - VCEsat - - 500 mV - VBEsat - - 900 mV Collector-Base cutoff current - Kollektorreststrom IE = 0, - VCB = 200 V IE = 0, - VCB = 160 V MMBTA92 MMBTA93 Emitter-Base cutoff current - Emitterreststrom IC = 0, - VEB = 3 V Collector saturation voltage - Kollektor-Sattigungsspannung 2) - IC = 20 mA, - IB = 2 mA Base saturation voltage - Basis-Sattigungsspannung 2) - IC = 20 mA, - IB = 2 mA 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% (c) Diotec Semiconductor AG http://www.diotec.com/ 1 MMBTA92 / MMBTA93 Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. hFE hFE hFE 25 40 25 - - - - - - fT 50 MHz - - CCB0 CCB0 - - - - 6 pF 8 pF DC current gain - Kollektor-Basis-Stromverhaltnis - VCE = 10 V, - IC = 1 mA - VCE = 10 V, - IC = 10 mA - VCE = 10 V, - IC = 30 mA Gain-Bandwidth Product - Transitfrequenz - VCE = 10 V, - IC = 20 mA, f = 100 MHz Collector-Base capacitance - Kollektor-Basis-Kapazitat - VCB = 20 V, IE =ie = 0, f = 1 MHz MMBTA92 MMBTA93 Thermal resistance junction - ambient air Warmewiderstand Sperrschicht - umgebende Luft RthA < 420 K/W 1) Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren MMBTA42, MMBTA43 Marking - Stempelung MMBTA92 = 2D MMBTA93 = 2E 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [C] Power dissipation versus ambient temperature 1) Verlustleistung in Abh. von d. Umgebungstemp.1) 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG