Features
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Hermetically Sealed
Ceramic Package
Light Weight
ESD Rating: Class 1A per MIL-STD-750,
Method 1020
IR HiRel R5 technology provides high performance power
MOSFETs for space applications. These devices have
been characterized for Single Event Effects (SEE) with
useful performance up to an LET of 80 (MeV/(mg/cm2)).
The combination of low RDS(on) and low gate charge
reduces the power losses in switching applications such as
DC to DC converters and motor control. These devices
retain all of the well established advantages of MOSFETs
such as voltage control, fast switching and temperature
stability of electrical parameters.
Absolute Maximum Ratings (Per Die) Pre-Irradiation
Symbol Parameter Value Units
ID1 @ VGS = 12V, TC = 25°C Continuous Drain Current 1.8
A
ID2 @ VGS = 12V, TC = 100°C Continuous Drain Current 1.0
IDM @TC = 25°C Pulsed Drain Current 6.4
PD @TC = 25°C Maximum Power Dissipation 1.4 W
Linear Derating Factor 0.011 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 130 mJ
IAR Avalanche Current 1.6 A
EAR Repetitive Avalanche Energy 0.14 mJ
dv/dt Peak Diode Recovery dv/dt 6.5 V/ns
TJ Operating Junction and
°C
TSTG Storage Temperature Range
Lead Temperature 300 (0.063 in. /1.6 mm from case for 10s)
Weight 1.3 (Typical) g
-55 to + 150
MO-036AB
IRHG57110
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Product Summary
Part Number Radiation Level RDS(on) I
D
IRHG57110 100 kRads(Si) 0.29 1.6A
IRHG53110 300 kRads(Si) 0.29 1.6A
IRHG55110 500 kRads(Si) 0.29 1.6A
IRHG58110 1000 kRads(Si) 0.29 1.6A
RR
5
100V, Quad N-CHANNEL
TECHNOLOGY
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (MO-036AB)
Description
For Footnotes, refer to the page 2.
PD-94432D
International Rectifier HiRel Products, Inc.
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Thermal Resistance (Per Die)
Symbol Parameter Min. Typ. Max. Units
RJA Junction-to-Ambient (Typical socket mount) ––– ––– 90 °C/W
Electrical Characteristics For Each N-Channel Device @ Tj = 25°C(Unless Otherwise Specified)
Symbol Parameter Min. Typ. Max. Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 1.0mA
BVDSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.14 ––– V/°C Reference to 25°C, ID = 1.0mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.29 VGS = 12V, ID2 = 1.0A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 1.0mA
Gfs Forward Transconductance 1.0 ––– ––– S VDS = 15V, ID2 = 1.0A
IDSS Zero Gate Voltage Drain Current ––– ––– 10 µA VDS = 80V, VGS = 0V
––– ––– 25 VDS = 80V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Leakage Forward ––– ––– 100 nA VGS = 20V
Gate-to-Source Leakage Reverse ––– ––– -100 VGS = -20V
QG Total Gate Charge ––– ––– 17
nC
ID1 = 1.6A
QGS Gate-to-Source Charge ––– ––– 4.4 VDS = 50V
QGD Gate-to-Drain (‘Miller’) Charge ––– ––– 3.9 VGS = 12V
td(on) Turn-On Delay Time ––– ––– 21
ns
VDD = 50V
tr Rise Time ––– ––– 16 ID1 = 1.6A
td(off) Turn-Off Delay Time ––– ––– 30 RG = 7.5
tf Fall Time ––– ––– 15 VGS = 12V
Ls +LD Total Inductance ––– 10 ––– nH
Measured from Drain lead (6mm / 0.25 in
from package) to Source lead (6mm/ 0.25
in from package) with Source wire inter-
nally bonded from Source pin to Drain pin
Ciss Input Capacitance ––– 370 –––
pF
VGS = 0V
Coss Output Capacitance ––– 110 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 3.4 ––– ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics (Per Die)
Symbol Parameter Min. Typ. Max. Units Test Conditions
IS Continuous Source Current (Body Diode) ––– ––– 1.6
ISM Pulsed Source Current (Body Diode) ––– ––– 6.4
VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C,IS = 1.6A, VGS = 0V
trr Reverse Recovery Time ––– ––– 110 ns TJ = 25°C, IF = 1.6A, VDD ≤25V
Qrr Reverse Recovery Charge ––– ––– 380 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
A
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = 25V, starting TJ = 25°C, L = 100mH, Peak IL = 1.6A, VGS = 12V
ISD 1.6A, di/dt 340A/µs, VDD 100V, TJ 150°C
Pulse width 300 µs; Duty Cycle 2%
Total Dose Irradiation with VGS Bias. 10 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with VDS Bias. 80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, Method 1019, condition A.
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Table 2. Typical Single Event Effect Safe Operating Area
LET
(MeV/(mg/cm2))
Energy
(MeV)
Range
(µm)
VDS (V)
@ VGS =
0V
@ VGS =
-5V
@ VGS =
-10V
@ VGS =
-15V
@ VGS =
-20V
38 ± 5% 300 ± 7.5% 38 ± 7.5% 100 100 100 100 100
61 ± 5% 330 ± 7.5% 31 ± 7.5% 100 100 100 35 25
84 ± 5% 350 ± 10% 28 ± 7.5% 100 100 80 25 –––
IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at IR HiRel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose
(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using
the same drive circuitry and test conditions in order to provide a direct comparison.
Fig a. Typical Single Event Effect, Safe Operating Area
For Footnotes, refer to the page 2.
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Symbol Parameter Up to 500 kRads (Si)1
Units Test Conditions
Min. Max. Min. Max.
BVDSS Drain-to-Source Breakdown Voltage 100 ––– 100 ––– V VGS = 0V, ID = 1.0mA
VGS(th) Gate Threshold Voltage 2.0 4.0 1.5 4.0 V VDS = VGS, ID = 1.0mA
IGSS Gate-to-Source Leakage Forward ––– 100 ––– 100 nA VGS = 20V
IGSS Gate-to-Source Leakage Reverse ––– -100 ––– -100 nA VGS = -20V
IDSS Zero Gate Voltage Drain Current ––– 10 ––– 10 µA VDS = 80V, VGS = 0V
RDS(on) Static Drain-to-Source
On-State Resistance (TO-3) ––– 0.29 ––– 0.31
VGS = 12V, ID2 = 1.0A
RDS(on) Static Drain-to-Source
On-State Resistance (TO-254AA) ––– 0.29 ––– 0.31
VGS = 12V, ID2 = 1.0A
VSD Diode Forward Voltage ––– 1.2 ––– 1.2 V VGS = 0V, IS = 1.6A
1000 kRads (Si) 2
1. Part number IRHG57110, IRHG53110, IRHG55110
2. Part numbers IRHG58110
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
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Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 5. Typical Capacitance Vs. Drain-to-Source Fig 6. Typical Gate Charge Vs. Gate-to-Source
Voltage
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 7. Typical Source-Drain Diode Forward Volt-
Fig 10. Maximum Avalanche Energy
Fig 8. Maximum Safe Operating Area
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Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
Fig 13a. Gate Charge Waveform
Fig 14b. Switching Time Waveforms
Fig 14a. Switching Time Test Circuit
tp
V
(BR)DSS
I
AS
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Case Outline and Dimensions - MO-036AB
www.infineon.com/irhirel
Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 234 65555
Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776
San Jose, California 95134, USA Tel: +1 (408) 434-5000
Data and specifications subject to change without notice.
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IMPORTANT NOTICE
The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The
data contained herein is a characterization of the component based on internal standards and is intended to
demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and
analysis to determine suitability in the application environment to confirm compliance to your system requirements.
With respect to any example hints or any typical values stated herein and/or any information regarding the application of
the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without
limitation warranties on non- infringement of intellectual property rights and any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s product and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any
customer’s technical departments to evaluate the suitability of the product for the intended applications and the
completeness of the product information given in this document with respect to applications.
For further information on the product, technology, delivery terms and conditions and prices, please contact your local
sales representative or go to (www.infineon.com/hirel).
WARNING
Due to technical requirements products may contain dangerous substances. For information on the types in question,
please contact your nearest Infineon Technologies office.
