2SK4042 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK4042 Switching Regulator Applications * * * * Unit: mm Low drain-source ON resistance: RDS (ON) = 0.7 (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 k) VDGR 500 V Gate-source voltage VGSS 30 V (Note 1) ID 8 Pulse (t = 1 ms) (Note 1) IDP 32 Drain power dissipation (Tc = 25C) PD 40 W Single pulse avalanche energy (Note 2) EAS 312 mJ Avalanche current IAR 8 A Repetitive avalanche energy (Note 3) EAR 4 mJ Channel temperature Tch 150 C Storage temperature range Tstg -55 to 150 C DC Drain current A 1: Gate 2: Drain 3: Source JEDEC JEITA SC-67 TOSHIBA 2-10U1B Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/''Derating Concept and Methods'') and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 3.125 C/W Thermal resistance, channel to ambient Rth (ch-a) 62.5 C/W Note 1: Ensure that the channel temperature does not exceed 150C. 1 Note 2: VDD = 90 V, Tch = 25C(initial), L = 8.3 mH, IAR = 8 A, RG = 25 Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 3 2009-09-29 2SK4042 Electrical Characteristics (Ta = 25C) Characteristics Symbol Typ. Max Unit IGSS VGS = 25 V, VDS = 0 V 10 A IG = 10 A, VDS = 0 V 30 V IDSS VDS = 500 V, VGS = 0 V 100 A Drain cut-off current Drain-source breakdown voltage Min V (BR) GSS Gate leakage current Gate-source breakdown voltage Test Condition V (BR) DSS ID = 10 mA, VGS = 0 V 500 V Vth VDS = 10 V, ID = 1 mA 2.0 4.0 V Gate threshold voltage Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 4 A 0.70 0.97 Forward transfer admittance Yfs VDS = 10 V, ID = 4 A 3.0 6.5 S Input capacitance Ciss 1050 Reverse transfer capacitance Crss 10 Output capacitance Coss 110 VOUT 26 RL = 50 45 38 130 28 16 12 Rise time VDS = 25 V, VGS = 0 V, f = 1 MHz Turn-on time ton 50 Switching time Fall time ID = 4 A 10 V VGS 0V tr tf Turn-off time VDD - 200 V Duty 1%, tw = 10 s toff Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDD - 400 V, VGS = 10 V, ID = 8 A pF ns nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit (Note 1) IDR 8 A (Note 1) IDRP 32 A Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) VDSF IDR = 8 A, VGS = 0 V -1.7 V Reverse recovery time trr IDR = 8 A, VGS = 0 V, 190 ns Reverse recovery charge Qrr dIDR/dt = 100 A/s 0.5 C Marking Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] K4042 Part No. (or abbreviation code) Lot No. Note 4 Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-09-29 2SK4042 ID - VDS ID - VDS 15 COMMON SOURCE Tc = 25C PULSE TEST 7 6.5 6 4 6 2 5.5 15 COMMON SOURCE Tc = 25C PULSE TEST 8 (A) 8 20 DRAIN CURRENT ID DRAIN CURRENT ID (A) 10 8 7.5 16 12 7 8 6.5 6 4 5.5 VGS = 5V 0 0 2 4 8 6 DRAIN-SOURCE VOLTAGE 0 10 VDS 0 (V) 10 20 VDS (V) Tc = -55C DRAIN-SOURCE VOLTAGE (A) DRAIN CURRENT ID COMMON SOURCE VDS = 20V PULSE TEST 25 15 100 10 5 0 2 4 VDS 50 (V) VDS - VGS 20 0 40 DRAIN-SOURCE VOLTAGE ID - VGS 25 V 30 6 8 GATE-SOURCE VOLTAGE 12 10 VGS 10 COMMON SOURCE Tc = 25C PULSE TEST 8 ID = 8A 6 4 4 2 0 2 0 (V) 5 10 GATE-SOURCE VOLTAGE 15 VGS 20 (V) RDS (ON) - ID 100 10 COMMON SOURCE VDS = 20 V PULSE TEST 10 DRAIN-SOURCE ON RESISTANCE RDS (ON) () FORWARD TRANSFER ADMITTANCE Yfs (S) Yfs - ID Tc = -55C 25 100 1 0.1 0.1 1 DRAIN CURRENT ID 0.1 0.1 100 10 1 (A) COMMON SOURCE Tc = 25C PULSE TEST VGS = 10 ,15V 1 DRAIN CURRENT ID 3 10 (A) 2009-09-29 2SK4042 100 COMMON SOURCE VGS = 10 V PULSE TEST ID = 8A 4 1.2 2 0.8 0.4 -40 0 40 CASE TEMPERATURE 80 120 Tc 10 1 10 5 0.1 0 160 (C) 3 -0.2 -0.4 -0.6 CAPACITANCE - VDS GATE THRESHOLD VOLTAGE Vth (V) (pF) C CAPACITANCE (V) Vth - Tc Ciss Coss 100 Crss 10 COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25C 1 10 DRAIN-SOURCE VOLTAGE 3 2 COMMON SOURCE VDS = 10 V ID = 1 mA PULSE TEST 1 0 -80 100 VDS 4 (V) VDS (V) DRAIN-SOURCE VOLTAGE 40 30 20 10 80 CASE TEMPERATURE 0 40 80 120 Tc 160 (C) DYNAMIC INPUT / OUTPUT CHARACTERISTICS 50 40 -40 CASE TEMPERATURE PD - Tc DRAIN POWER DISSIPATION PD (W) VDS 5 1000 0 0 -1.2 -1.0 -0.8 DRAIN-SOURCE VOLTAGE 10000 1 0.1 VGS = 0, -1 V 1 120 Tc 160 (C) 500 20 VDS 400 16 VDD = 100 V 400 300 200 200 8 VGS COMMON SOURCE ID = 8 A Tc = 25C PULSE TEST 100 0 0 10 20 Qg 4 0 50 40 30 TOTAL GATE CHARGE 4 12 VGS(V) 0 -80 COMMON SOURCE Tc = 25C PULSE TEST GATE-SOURCE VOLTAGE 1.6 IDR - VDS RDS(ON) - TC DRAIN REVERSE CURRENT IDR (A) DRAIN-SOURCE ON RESISTANCE RDS (ON) ( ) 2 (nC) 2009-09-29 2SK4042 NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) rth - tw 10 1 Duty=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 T SINGLE PULSE 0.01 Duty = t/T Rth (ch-c) = 3.125C/W 0.001 10 100 1m 10m PULSE WIDTH 100m 1 10 tw (s) SAFE OPERATING AREA EAS - Tch 500 100 ID max (PULSED) * 10 AVALANCHE ENERGY EAS (mJ) DRAIN CURRENT ID (A) 100 s * ID max (CONTINUOUS) * 1 ms * 1 DC OPERATION Tc = 25C SINGLE NONREPETITIVE PULSE 0.1 LINEARLY MUST WITH BE DERATED INCREASE 200 100 50 75 100 125 150 CHANNEL TEMPERATURE (INITIAL) Tch (C) IN TEMPERATURE. 0.01 1 300 0 25 Tc=25 CURVES 400 VDSS max 10 100 DRAIN-SOURCE VOLTAGE 1000 VDS 15 V (V) BVDSS IAR -15 V VDD TEST CIRCUIT RG = 25 VDD = 90 V, L = 8.3mH 5 VDS WAVE FORM AS = 1 B VDSS L I2 B - 2 VDSS VDD 2009-09-29 2SK4042 RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. * Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact ("Unintended Use"). 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. * Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2009-09-29