2SK4042
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK4042
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 0.7 (typ.)
High forward transfer admittance: |Yfs| = 6.5 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 500 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS 500 V
Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V
Gate-source voltage VGSS ±30 V
DC (Note 1) ID 8
Drain current Pulse (t = 1 ms)
(Note 1)
IDP 32
A
Drain power dissipation (Tc = 25°C) PD 40 W
Single pulse avalanche energy
(Note 2)
EAS 312 mJ
Avalanche current IAR 8 A
Repetitive avalanche energy (Note 3) EAR 4 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg -55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/’’Derating Concept and
Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case Rth (ch-c) 3.125 °C/W
Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 8.3 mH, IAR = 8 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
1: Gate
2: Drain
3: Source
JEDEC
JEITA SC-67
TOSHIBA 2-10U1B
Weight : 1.7 g (typ.)
1
3
2
2SK4042
2009-09-29
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±25 V, VDS = 0 V ±10 μA
Gate-source breakdown voltage V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 V
Drain cut-off current IDSS V
DS = 500 V, VGS = 0 V 100 μA
Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 500 V
Gate threshold voltage Vth V
DS = 10 V, ID = 1 mA 2.0 4.0 V
Drain-source ON resistance RDS (ON) V
GS = 10 V, ID = 4 A 0.70 0.97 Ω
Forward transfer admittance Yfs V
DS = 10 V, ID = 4 A 3.0 6.5 S
Input capacitance Ciss 1050
Reverse transfer capacitance Crss 10
Output capacitance Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
110
pF
Rise time tr 26
Turn-on time ton 45
Fall time tf 38
Switching time
Turn-off time toff
130
ns
Total gate charge Qg 28
Gate-source charge Qgs 16
Gate-drain charge Qgd
VDD
400 V, VGS = 10 V, ID = 8 A
12
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current
(Note 1)
IDR 8 A
Pulse drain reverse current (Note 1) IDRP 32 A
Forward voltage (diode) VDSF I
DR = 8 A, VGS = 0 V 1.7
V
Reverse recovery time trr 190 ns
Reverse recovery charge Qrr
IDR = 8 A, VGS = 0 V,
dIDR/dt = 100 A/μs 0.5 μC
Marking
RL =
50 Ω
0 V
10 V
VGS
VDD
200 V
ID = 4 A VOUT
50 Ω
Duty 1%, tw = 10 μs
Lot No.
Note 4
K4042
Part No. (or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2SK4042
2009-09-29
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0
8
16
20
010 20 30
12
4
50
V
15 8
7.5
6
6.5
7
5.5
40
Yfs – ID
GATE-SOURCE VOLTAGE VGS (V)
ID – VGS
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
DRAIN-SOURCE VOLTAGE VDS (V)
VDS – VGS
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
Yfs (S)
DRAIN-SOURCE VOLTAGE VDS (V)
ID – VDS
DRAIN CURRENT ID (A)
DRAIN-SOURCE VOLTAGE VDS (V)
ID – VDS
DRAIN CURRENT ID (A)
RDS (ON) – ID
DRAIN CURRENT ID (A)
DRAIN-SOURCE ON RESISTANCE
RDS (ON) (Ω)
COMMON SOURCE
Tc = 25°C
PULSE TEST
0
0
4
8
10
2 4 6
VGS = 5V
COMMON SOURCE
Tc = 25°C
PULSE TEST
5.5
6
6
2
8 10
15
7
8
6.5
Tc = 55°C
0
0
10
20
4 8
2 6 10
25
100
COMMON SOURCE
VDS = 20V
PULSE TEST
5
15
25
0
0
6
8
20
COMMON SOURCE
Tc = 25°C
PULSE TEST
15
4
4
10
510
ID = 8A
2
2
0.1
0.1
1
10
110
COMMON SOURCE
Tc = 25°C
PULSE TEST
VGS = 10 ,15V
12
100
10
0.1 1 100
COMMON SOURCE
VDS = 20 V
PULSE TEST
25
100
Tc = 55°C
10
1
0.1
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DRAIN-SOURCE VOLTAGE VDS (V)
CAPACITANCE – VDS
CAPACITANCE C (pF)
COMMON SOURCE
VGS = 0 V
f = 1 MHz
Tc = 25°C
1
0.1
10
100
1000
10000
1 10 100
Ciss
Coss
Crss
CASE TEMPERATURE Tc (°C)
DRAIN-SOURCE ON RESISTANCE
RDS (ON) ( Ω)
DRAIN POWER DISSIPATION
PD (W)
CASE TEMPERATURE Tc (°C)
PD – Tc
IDR – VDS
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN REVERSE CURRENT
IDR (A)
COMMON SOURCE
Tc = 25°C
PULSE TEST
0
0.1 0.2
1
10
100
0.4 0.6 0.8
VGS = 0, 1 V
10
3
1
5
1.0 1.2
TOTAL GATE CHARGE Qg (nC)
GATE-SOURCE VOLTAGE VGS(V)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
DRAIN-SOURCE VOLTAGE VDS (V)
COMMON SOURCE
ID = 8 A
Tc = 25°C
PULSE TEST
0 10 20
VDD = 100 V
VDS
VGS
400
200
30 50
40
500
400
300
200
100
0
20
16
12
8
4
0
Vth – Tc
GATE THRESHOLD VOLTAGE
Vth (V)
CASE TEMPERATURE Tc (°C)
0
1
2
3
5
80 40 0 40 80 120 160
4
COMMON SOURCE
VDS = 10 V
ID = 1 mA
PULSE TEST
0
80 40 0 40 80 120 160
0.4
0.8
1.2
1.6
2
COMMON SOURCE
VGS = 10 V
PULSE TEST
2
ID = 8A
4
50
0
0 40 80 120 160
20
30
40
10
RDS(ON) – TC
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2009-09-29
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CHANNEL TEMPERATURE (INITIAL)
Tch (°C)
EAS – Tch
AVALANCHE ENERGY
EAS (mJ)
rth – tw
PULSE WIDTH tw (s)
0.01
10μ
0.1
1
10
100μ 1m 10m 100m 1 10
T
PDM
t
Duty = t/T
Rth (ch-c) = 3.125°C/W
Duty=0.5
0.2
0.1
0.05
0.02
0.01
0.001
NORMALIZED TRANSIENT THERMAL
IMPEDANCE rth (t)/Rth (ch-c)
SINGLE PULSE
15 V
15 V
TEST CIRCUIT WAVE FORM
IAR
BVDSS
VDD V
DS
RG = 25 Ω
VDD = 90 V, L = 8.3mH
= VDD
BVDSS
BVDSS
2
IL
2
1
ΕAS
500
400
300
200
100
0
25 50 75 100 125 150
0.01
1
0.1
1
10
100
10 1000100
100 μs *
1 ms *
VDSS max
DRAIN-SOURCE VOLTAGE VDS (V)
SAFE OPERATING AREA
SINGLE NONREPETITIVE PULSE
Tc= 2 5
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
ID max (PULSED) *
ID max (CONTINUOUS) *
DRAIN CURRENT ID (A)
DC OPERATION
Tc = 25°C
2SK4042
2009-09-29
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RESTRICTIONS ON PRODUCT USE
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the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
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Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
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including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
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