VS-8EWF..SPbF Soft Recovery Series www.vishay.com Vishay Semiconductors Surface Mount Fast Soft Recovery Rectifier Diode, 8 A FEATURES Base cathode + 2 * Glass passivated pellet chip junction * Meets MSL level 1, per LF maximum peak of 260 C * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 3 1 TO-252AA (D-PAK) 1 Anode - J-STD-020, 3 - Anode APPLICATIONS * Output rectification and freewheeling diode in inverters, choppers and converters PRODUCT SUMMARY Package TO-252AA (D-PAK) IF(AV) 8A VR 1000 V, 1200 V * Input rectifications where severe conducted EMI should be met restrictions on VF at IF 1.3 V DESCRIPTION IFSM 150 A trr 80 ns The VS-8EWF..S-M3 fast soft recovery rectifier series has been optimized for combined short reverse recovery time, low forward voltage drop and low leakage current. TJ max. 150 C Diode variation Single die Snap factor 0.6 The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Sinusoidal waveform VALUES UNITS 8 A VRRM 1000/1200 V IFSM 150 A 1.3 V VF 8 A, TJ = 25 C trr 1 A, 100 A/s TJ Range 80 ns -40 to +150 C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 C mA VS-8EWF10SPbF 1000 1100 VS-8EWF12SPbF 1200 1300 VOLTAGE RATINGS PART NUMBER 4 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current IF(AV) Maximum peak one cycle non-repetitive surge current IFSM Maximum I2t for fusing I 2t Maximum I2t for fusing I2t TEST CONDITIONS TC = 94 C, 180 conduction half sine wave VALUES UNITS 8 10 ms sine pulse, rated VRRM applied 125 10 ms sine pulse, no voltage reapplied 150 10 ms sine pulse, rated VRRM applied 78 10 ms sine pulse, no voltage reapplied 110 t = 0.1 to 10 ms, no voltage reapplied 1100 A A2s A2s Revision: 16-Jan-17 Document Number: 94109 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWF..SPbF Soft Recovery Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER Maximum forward voltage drop Forward slope resistance Threshold voltage Maximum reverse leakage current SYMBOL VFM rt VF(TO) IRM TEST CONDITIONS 8 A, TJ = 25 C TJ = 150 C TJ = 25 C VR = Rated VRRM TJ = 150 C VALUES UNITS 1.3 V 25.6 m 0.93 V 0.1 mA 4 RECOVERY CHARACTERISTICS PARAMETER SYMBOL Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr Snap factor TEST CONDITIONS IF at 8 Apk 25 A/s TJ = 25 C S VALUES UNITS 270 ns 4.2 A 1 C IFM trr ta tb t di dt Qrr Irr 0.6 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Typical thermal resistance, junction to ambient (PCB mount) SYMBOL TEST CONDITIONS TJ, TStg RthJC DC operation UNITS -40 to +150 C 2.5 C/W RthJA (1) 50 1 Approximate weight Marking device VALUES g 0.03 Case style TO-252AA (D-PAK) oz. 8EWF12S Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 m) copper 40 C/W For recommended footprint and soldering techniques refer to application note #AN-994 Revision: 16-Jan-17 Document Number: 94109 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWF..SPbF Soft Recovery Series www.vishay.com Vishay Semiconductors 18 8EWF.. S Series RthJC (DC) = 2.5 C/W 140 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (C) 150 130 120 O Conduction angle 110 100 90 30 80 120 60 70 90 12 RMS limit 10 8 6 O Conduction period 4 8EWF..S Series TJ = 150 C 2 0 0 1 3 2 4 5 7 6 8 9 2 0 4 6 10 8 12 14 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics 150 140 8EWF..S Series RthJC (DC) = 2.5 C/W 140 120 130 120 110 O 100 Conduction period 90 30 60 80 90 70 120 2 6 4 10 8 90 80 70 60 50 VS-8EWF..S .. Series 12 14 1 10 100 Average Forward Current (A) Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 2 - Current Rating Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 170 180 120 90 60 30 10 8 150 Peak Half Sine Wave Forward Current (A) 12 RMS limit 6 O 4 Conduction angle 2 8EWF..S Series TJ = 150 C 1 2 3 4 5 6 7 8 130 9 Maximum non-repetitive surge current versus pulse train duration. Initial Tj = Tj max. No voltage reapplied Rated Vrrm reapplied 110 90 70 50 30 0 0 100 30 60 0 110 40 DC 180 At any rated load condition and with rated Vrrm applied following surge. Initial Tj = 150C at 60 Hz 0.0083s at 50 Hz 0.0100s 130 Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (C) 14 180 60 Maximum Average Forward Power Loss (W) DC 180 120 90 60 30 16 10 0.01 VS-8EWF..S .. Series 0.1 1 10 Average Forward Current (A) Pulse Train Duration (s) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 16-Jan-17 Document Number: 94109 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWF..SPbF Soft Recovery Series Vishay Semiconductors 2.0 1000 8EWF..S Series TJ = 25 C TJ = 25 C TJ = 150 C Qrr - Typical Reverse Recovery Charge (C) Instantaneous Forward Current (A) www.vishay.com 100 10 1 0.5 IFM = 8 A 1.2 IFM = 5 A 0.8 IFM = 2 A 0.4 IFM = 1 A 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 40 80 120 160 200 Instantaneous Forward Voltage (V) dI/dt - Rate of Fall of Forward Current (A/s) Fig. 7 - Forward Voltage Drop Characteristics Fig. 10 - Recovery Charge Characteristics, TJ = 25 C 5 8EWF..S Series TJ = 150 C Qrr - Typical Reverse Recovery Charge (C) 8EWF..S Series TJ = 25 C 0.5 trr - Typical Reverse Recovery Time (s) 1.6 8EWF..S Series 0.6 IFM = 10 A IFM = 8 A IFM = 5 A IFM = 2 A IFM = 1 A 0.4 0.3 0.2 0.1 4 IFM = 10 A 3 IFM = 8 A IFM = 5 A 2 IFM = 2 A 1 IFM = 1 A 0 0 0 40 80 120 160 0 200 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/s) dI/dt - Rate of Fall of Forward Current (A/s) Fig. 8 - Recovery Time Characteristics, TJ = 25 C Fig. 11 - Recovery Charge Characteristics, TJ = 150 C 20 0.8 8EWF..S Series TJ = 150 C IFM = 10 A IFM = 8 A IFM = 5 A IFM = 2 A IFM = 1 A 0.6 0.4 Irr - Typical Reverse Recovery Current (A) trr - Typical Reverse Recovery Time (s) IFM = 10 A 0.2 8EWF..S Series TJ = 25 C 16 IFM = 10 A IFM = 8 A 12 IFM = 5 A IFM = 2 A 8 IFM = 1 A 4 0 0 0 40 80 120 160 200 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/s) dI/dt - Rate of Fall of Forward Current (A/s) Fig. 9 - Recovery Time Characteristics, TJ = 150 C Fig. 12 - Recovery Current Characteristics, TJ = 25 C Revision: 16-Jan-17 Document Number: 94109 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWF..SPbF Soft Recovery Series www.vishay.com Vishay Semiconductors 25 8EWF..S Series TJ = 150 C Irr - Typical Reverse Recovery Current (A) 20 IFM = 10 A IFM = 8 A IFM = 5 A IFM = 2 A IFM = 1 A 15 10 5 0 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/s) ZthJC - Transient Thermal Impedance (C/W) Fig. 13 - Recovery Current Characteristics, TJ = 150 C 10 Steady state value (DC operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 8EWF..S Series 0.1 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Revision: 16-Jan-17 Document Number: 94109 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWF..SPbF Soft Recovery Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 8 E W F 12 S TR PbF 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Current rating (8 = 8 A) 3 - Circuit configuration: E = single diode 4 - Package: W = D-PAK 5 - Type of silicon: F = fast soft recovery rectifier 6 - Voltage code x 100 = VRRM 7 - S = surface mountable 8 - TR = tape and reel 10 = 1000 V 12 = 1200 V TRR = tape and reel (right oriented) TRL = tape and reel (left oriented) 9 - None = standard production PbF = lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95016 Part marking information www.vishay.com/doc?95059 Packaging information www.vishay.com/doc?95033 SPICE model www.vishay.com/doc?95552 Revision: 16-Jan-17 Document Number: 94109 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D-PAK (TO-252AA) DIMENSIONS in millimeters and inches (5) A E b3 Pad layout C A (3) 0.010 M C A B c2 A L3 (3) O1 4 O2 4 B Seating plane H D (5) 1 2 3 (2) L5 b 1 A c b2 0.06 MIN. (1.524) 0.010 M C A B 0.093 (2.38) 0.085 (2.18) (L1) Detail "C" Rotated 90 CW Scale: 20:1 H (7) Lead tip C Gauge plane L2 SYMBOL 2 0.488 (12.40) 0.409 (10.40) 0.089 MIN. (2.28) Detail "C" 2x e 0.245 MIN. (6.23) D1 L4 3 0.265 MIN. (6.74) E1 MILLIMETERS INCHES C Seating plane C O L NOTES A1 SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. MIN. MAX. A 2.18 2.39 0.086 0.094 e A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410 1.40 1.78 0.055 0.070 2.29 BSC MIN. MAX. 0.090 BSC b 0.64 0.89 0.025 0.035 L b2 0.76 1.14 0.030 0.045 L1 b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 L3 0.89 1.27 0.035 0.050 c2 0.46 0.89 0.018 0.035 L4 - 1.02 - 0.040 3 2.74 BSC L2 0.51 BSC NOTES 0.108 REF. 0.020 BSC D 5.97 6.22 0.235 0.245 5 L5 1.14 1.52 0.045 0.060 D1 5.21 - 0.205 - 3 O 0 10 0 10 E 6.35 6.73 0.250 0.265 5 O1 0 15 0 15 E1 4.32 - 0.170 - 3 O2 25 35 25 35 3 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension uncontrolled in L5 (3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad (4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip (5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (6) Dimension b1 and c1 applied to base metal only (7) Datum A and B to be determined at datum plane H (8) Outline conforms to JEDEC outline TO-252AA Revision: 05-Dec-12 Document Number: 95016 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000