VS-8EWF..SPbF Soft Recovery Series
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Surface Mount Fast Soft Recovery Rectifier Diode, 8 A
FEATURES
• Glass passivated pellet chip junction
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Output rectification and freewheeling diode in inverters,
choppers and converters
• Input rectifications where severe restrictions on
conducted EMI should be met
DESCRIPTION
The VS-8EWF..S-M3 fast soft recovery rectifier series has
been optimized for combined short reverse recovery time,
low forward voltage drop and low leakage current.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
PRODUCT SUMMARY
Package TO-252AA (D-PAK)
IF(AV) 8 A
VR1000 V, 1200 V
VF at IF1.3 V
IFSM 150 A
trr 80 ns
TJ max. 150 °C
Diode variation Single die
Snap factor 0.6
Base
cathode
+
2
13
A
node --
Anode
1
2
3
TO-252AA (D-PAK)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Sinusoidal waveform 8 A
VRRM 1000/1200 V
IFSM 150 A
VF8 A, TJ = 25 °C 1.3 V
trr 1 A, 100 A/µs 80 ns
TJRange -40 to +150 °C
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM
AT 150 °C
mA
VS-8EWF10SPbF 1000 1100 4
VS-8EWF12SPbF 1200 1300
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current IF(AV) TC = 94 °C, 180° conduction half sine wave 8
A
Maximum peak one cycle
non-repetitive surge current IFSM
10 ms sine pulse, rated VRRM applied 125
10 ms sine pulse, no voltage reapplied 150
Maximum I2t for fusing I2t10 ms sine pulse, rated VRRM applied 78 A2s
10 ms sine pulse, no voltage reapplied 110
Maximum I2t for fusing I2tt = 0.1 to 10 ms, no voltage reapplied 1100 A2s
VS-8EWF..SPbF Soft Recovery Series
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Note
(1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop VFM 8 A, TJ = 25 °C 1.3 V
Forward slope resistance rtTJ = 150 °C 25.6 m
Threshold voltage VF(TO) 0.93 V
Maximum reverse leakage current IRM
TJ = 25 °C VR = Rated VRRM 0.1 mA
TJ = 150 °C 4
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Reverse recovery time trr IF at 8 Apk
25 A/μs
TJ = 25 °C
270 ns
Reverse recovery current Irr 4.2 A
Reverse recovery charge Qrr 1μC
Snap factor S0.6
IFM trr
di
dt
Irr
Qrr
t
tatb
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
storage temperature range TJ, TStg -40 to +150 °C
Maximum thermal resistance,
junction to case RthJC DC operation 2.5
°C/W
Typical thermal resistance,
junction to ambient (PCB mount) RthJA (1) 50
Approximate weight 1g
0.03 oz.
Marking device Case style TO-252AA (D-PAK) 8EWF12S
VS-8EWF..SPbF Soft Recovery Series
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Revision: 16-Jan-17 3Document Number: 94109
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Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
150
0
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
1
80
29
110
130
90
35
140
4
60
7
8EWF.. S Series
RthJC (DC) = 2.5 °C/W
Conduction angle
30°
60°
90°
120°
180°
86
70
100
120 Ø
150
04
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
8
110
14
120
2
130
140
100
60
6
8EWF..S Series
RthJC (DC) = 2.5 °C/W
Ø
Conduction period
30° 60°
90°
120°
180° DC
70
80
90
1210
2
0
12
0
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
5
6
9
231
4
7
4
8
10
180°
120°
90°
60°
30°
Conduction angle
8EWF..S Series
TJ = 150 °C
RMS limit
8
6
Ø
0
18
0
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
10
14
2
6
14
26
16
12
84
180°
120°
90°
60°
30°
DC
Ø
Conduction period
8EWF..S Series
TJ = 150 °C
RMS limit
12
10
8
4
Peak Half Sine Wave
Forward Current (A)
Number of Equal Amplitude Half Cycle
Current Pulses (N)
1 10 100
30
40
50
60
70
80
90
100
110
120
130
140
VS-8EWF..S .. Series
At any rated load condition and with
rated Vrrm applied following surge.
Initial Tj = 150°C
at 60 Hz 0.0083s
at 50 Hz 0.0100s
Peak Half Sine Wave
Forward Current (A)
Pulse Train Duration (s)
0.01 0.1 1 10
10
30
50
70
90
110
130
150
170
Maximum non-repetitive surge current
versus pulse train duration.
Initial Tj = Tj max.
No voltage reapplied
Rated Vrrm reapplied
VS-8EWF..S .. Series
VS-8EWF..SPbF Soft Recovery Series
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Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
1000
10
1
1.5 3.5
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
100
4.01.0 2.5
0.5 2.0 3.0
8EWF..S Series
TJ = 25 °C
TJ = 150 °C
4.5
0.6
0 40 120 200
trr - Typical Reverse
Recovery Time (µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
0.2
160
0.4
0
80
8EWF..S Series
TJ = 25 °C
IFM = 10 A
IFM = 1 A
IFM = 5 A
IFM = 2 A
IFM = 8 A
0.1
0.3
0.5
0
080 120 160 200
trr - Typical Reverse
Recovery Time (µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
0.4
0.6
0.2
0.8
40
8EWF..S Series
TJ = 150 °C IFM = 10 A
IFM = 1 A
IFM = 5 A
IFM = 2 A
IFM = 8 A
0
080 120 200
Qrr - Typical Reverse
Recovery Charge (µC)
dI/dt - Rate of Fall of Forward Current (A/µs)
1.2
0.4
0.8
2.0
16040
8EWF..S Series
TJ = 25 °C IFM = 10 A
IFM = 8 A
IFM = 5 A
IFM = 2 A
IFM = 1 A
1.6
0
40 200
Q
rr
- Typical Reverse
Recovery Charge (µC)
dI/dt - Rate of Fall of Forward Current (A/µs)
1
2
3
4
5
80 120
8EWF..S Series
TJ = 150 °C IFM = 10 A
IFM = 8 A
IFM = 5 A
IFM = 2 A
IFM = 1 A
0 160
20
0
080 120 160 200
Irr - Typical Reverse
Recovery Current (A)
dI/dt - Rate of Fall of Forward Current (A/µs)
8
16
4
12
40
8EWF..S Series
TJ = 25 °C IFM = 10 A
IFM = 8 A
IFM = 5 A
IFM = 2 A
IFM = 1 A
VS-8EWF..SPbF Soft Recovery Series
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Revision: 16-Jan-17 5Document Number: 94109
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Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
Fig. 14 - Thermal Impedance ZthJC Characteristics
25
10
0
080 200
Irr - Typical Reverse
Recovery Current (A)
dI/dt - Rate of Fall of Forward Current (A/µs)
20
5
15
40 120 160
8EWF..S Series
TJ = 150 °C
IFM = 10 A
IFM = 8 A
IFM = 5 A
IFM = 2 A
IFM = 1 A
0.1
0.0001 0.001 0.01 0.1
Square Wave Pulse Duration (s)
ZthJC - Transient Thermal Impedance (°C/W)
1
10
1
Steady state value
(DC operation)
8EWF..S Series
Single pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
VS-8EWF..SPbF Soft Recovery Series
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Revision: 16-Jan-17 6Document Number: 94109
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ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95016
Part marking information www.vishay.com/doc?95059
Packaging information www.vishay.com/doc?95033
SPICE model www.vishay.com/doc?95552
2- Current rating (8 = 8 A)
3- Circuit configuration:
E = single diode
4- Package:
W = D-PAK
5- Type of silicon:
F = fast soft recovery rectifier
6- Voltage code x 100 = VRRM
7- S = surface mountable
8- TR = tape and reel
TRR = tape and reel (right oriented)
TRL = tape and reel (left oriented)
9- None = standard production
PbF = lead (Pb)-free
10 = 1000 V
12 = 1200 V
Device code
51 32 4 6 7 8 9
8VS- E W F 12 S TR PbF
1- Vishay Semiconductors product
Outline Dimensions
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Revision: 05-Dec-12 1Document Number: 95016
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D-PAK (TO-252AA)
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension uncontrolled in L5
(3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
(4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip
(5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(6) Dimension b1 and c1 applied to base metal only
(7) Datum A and B to be determined at datum plane H
(8) Outline conforms to JEDEC outline TO-252AA
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 2.18 2.39 0.086 0.094 e 2.29 BSC 0.090 BSC
A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410
b 0.64 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070
b2 0.76 1.14 0.030 0.045 L1 2.74 BSC 0.108 REF.
b3 4.95 5.46 0.195 0.215 3 L2 0.51 BSC 0.020 BSC
c 0.46 0.61 0.018 0.024 L3 0.89 1.27 0.035 0.050 3
c2 0.46 0.89 0.018 0.035 L4 - 1.02 - 0.040
D 5.97 6.22 0.235 0.245 5 L5 1.14 1.52 0.045 0.060 2
D1 5.21 - 0.205 - 3 Ø 0° 10° 0° 10°
E 6.35 6.73 0.250 0.265 5 Ø1 0° 15° 0° 15°
E1 4.32 - 0.170 - 3 Ø2 25° 35° 25° 35°
Ø 1
E
(5)
b3 (3) 0.010 CAB
L3 (3)
B
AC
H
C
L2
D (5)
L4
b
2 x e
b2
(2) L5
123
4
Ø 2
A
c2 A
A
H
Seating
plane
c
Detail “C”
(7)
Seating
plane
A1
Detail “C”
Rotated 90 °CW
Scale: 20:1
(L1)
C
C
L
Ø
Gauge
plane
Lead tip
M
0.010 CAB
M
32
4
1
E1
D1
MIN.
0.265
(6.74)
MIN.
0.245
(6.23)
MIN.
0.089
(2.28)
MIN.
0.06
(1.524)
0.488 (12.40)
0.409 (10.40)
0.093 (2.38)
0.085 (2.18)
Pad layout
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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