SERIES TIC106 P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS mechanical data e 5ADC 30 V to 400 V 30 A Surge-Current Max IGT of 200 nA THE ANODE IS IN ELECTRICAL CONTACT WITH THE MOUNTING TAB THE GATE TERMINAL IS CONNECTED TO AP REGION MECHANICAL INTERCHANGEABILITY OF TICTO6 seo PLASTIC PACKAGE WITH TO-86 OUTLINE b 3Eaa THIS PORTION OF LEADS. | FREE OF FLASH CATHODE > == 0.420 ANODE > oie GATE > 0.300 PAP af LL fe 0210 9ORDIL S3IN3S LZGL Wud 69PLLEZS-10 ON NIL3A7ING@ 0.110 ee 0190: aes vane cot i ae wesrace! E pb oan a ws! 4 moesoumensions Sra OG _oow uN /WEASUREMENT POINT ry ees ase 0.040 ALL OIMENSIONS ARE IN INCHES RAD (2 PLACES! absolute maximum ratings over operating case temperature range (unless otherwise noted) fi TIC106Y | TIC10GF | TIC106A | TIC106B | TIC106C | TIC106D | UNIT Repetitive Peak Off-State Voltage, Vr (See Note 1) 30 50 100 200 300 400 Vv Repetitive Peak Reverse Voltage, VaR 30 50 100 200 300 400 Vv Continuous On-State Current at (or below} 80C Case Temperature (See Note 2) 5 A Average On-State Current (180 Conduction Angle) at (or below} 80C Case Temperature (See Note 3) 32 A Surge On-State Current (See Note 4} 30 A Peak Positive Gate Current (Pulse Width < 300 us) 0.2 A Peak Gate Power Dissipation (Pulse Width < 300 us) 1.3 Ww Average Gate Power Dissipation (See Note 5) 0.3 Ww Operating Case Temperature Range ~40 to 110 c Storage Temperature Range ~40 to 125 c Lead Temperature 1/16 inch fram Case for 10 Seconds 230 NOTES: 1. These values apply when the gate-cathode resistance Ro, = 1 kX. nN . These values apply for continuous d-c operation with resistive load, Above 80C derate according to Figure 3, 3, This valua may be applied continuously under single-phase 60-Hz half-sine-wave operation with resistive load, Above 80C derate according to Figure 3, 4, This value applies for one 60-Hz half-sine-wave when the device is operating at (or below) rated values of peak reverse voltage and on-state current, Surge may be repeated after tha device has returned to original thermal equilibrium. 5, This vaiue applies for a maximum averaging time of 16.6 ms. 471 TEXAS INSTRUMENTS INCORPORATED POST OFFICE BOX S012 DALLAS, TEXAS 75222 7-457-46 SERIES TIC106 P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX|UNIT lornm Repetitive Peak Off-State Current Vp = Rated Vora. RoK =1kR, Te = 110C 400 | uA RRM Repetitive Peak Reverse Current Vq = Rated Varnm. Iq=G, To = 110C 1 | mA (qT Gate Trigger Current Vaaz6V, AL = 100 9, tpig) = 20 us 60 200 | WA Vaaz6V, Rx_=1002, Row =1kN, 12 tig)? 20 us, To = 40C Vogt Gate Trigger Voltage Vaa=8V, AL = 100.2, RGK = 1k2, 04 06 a] tp(g)> 20 us VAA=5V, Re = 1002, Re = 1k, 02 tpo(g)> 20 us, Te = 110C , Vaa=6V, RGk = 1k, Initiating It = 10 mA, tH Holding Current To = 40C 8 mA Vaa=6V, R6k = 71 kQ, Initiating Ip = 10 mA 5 VTm_ Peak On-State Voltage lym = 5A, See Note 6 177) V dv/dt Critical Rate of Rise of Off-State Voltage| Vp = Rated Vp, Rok =tkk, Te = 110C 10 Vius thermal characteristics PARAMETER MAX [UNIT RgJjc Junction-to-Case Thermat Resistance 3.5 ecw Resa Junction-to-Free-Air Thermal Resistance 62.5 NOTE 6: This parameter must be measured using pulse techniques. t,, = 300 us, duty cycle < 2%. Voltage-sensing contacts, separate from the current-carrying contacts, ate located within 0.125 Inch from the device body. TEXAS eo INSTRUMENTS NCORPORAT POST OFFICE BOX S012 OALLAS, TEXAS 75222 471SERIES TIC106 P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS switching characteristics at 25C case temperature PARAMETER TEST CONDITIONS TYP UNIT . Vaa=30V, RL=62, ReEk(eff) = 5 k2, Gate-Controlled Turn-On-Ti : tgt a intro urn-On-Time Vin = 50 V, See Figure 1 1.75 us Vaa=30V, RL=62, 1 < tg Circuit-Commutated Turn-Off Time AA . L=6 RM ~ 8A V7 us See Figure 2 PARAMETER MEASUREMENT INFORMATION v2 0 iu rn V1 oS ri -- 'T INPUT v oY in Ip 10% Nee fle IRM i Tgt 4 I OUTPUT * 90% VT 0 t VR ; i ' ol fet WAVEFORMS VOLTAGE WAVEFORMS 4 > AL 2 : Vv =30V 0.1 uF > 10 5 we "| ) WI P Vaan = 30V See Notes A, B, and C 'T ouT- VT Monitor gg R1 = See N. F See Note D PUT Thyristor prose B See Note Under Test RGK (eff) ten a J L INPUT lan Reklefh nM or + t See Note E 0.1.2 SL fv GENERATOR (Noninductve M4 Monitor See Note E Resistor} + > Generator Synchronization TEST CIRCUIT TEST CIRCUIT FIGURE 1 GATE-CONTROLLED TURN-ON TIME FIGURE 2CIRCUIT-COMMUTATED TURN-OFF TIME NOTES: A. Vin is measured with gate and cathode terminals open. B. The input waveform of Figure 1 has the following characteristics: ty < 40 ns, ty, 2 20 us. C. Waveforms are monitored on an oscilloscope with the following characteristics: tp < 14 ns, Ri, 2 10 MQ, Cig < 12 pF. D. RGk{eft) includes the total resistance of the generator and the external resistor. E. Pulse generators for Vy and V2 are synchronized to provide an anode current waveform with the following characteristics: ty = 50 to 300 us, duty cycle = 1%. The pulse widths of V4 and V2 are 2 10 us. . Resistor Ry is adjusted for IR~ay > 8 A. nn 471 TEXAS INSTRU MENTS 7-47 NCORPORAT POST OFFICE BOX 5012 + DALLAS, TEXAS 75222SERIES TIC106 P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS THERMAL INFORMATION AVERAGE ANODE FORWARD CURRENT DERATING CURVE MAXIMUM CONTINUOUS ANODE POWER DISSIPATED vs CONTINUOUS ANODE FORWARD CURRENT 6 T 1 | Continuous DC i 5 e \ pac o Conduction 4 Angle # = 180 \ 3 Ty= 110C N \ \ | AY 'E(av) Maximum Average Anode Forward CurrentA 0 30 49 #50 60 70 80 90 =(100 To~Case TemperatureC FIGURE 3 SURGE ON-STATE CURRENT vs CYCLES OF CURRENT DURATION Tc < 80 See Note 7 Itm-Peak Half-Sine Wave CurrentA 1 2 4 7 10 20 40 Consecutive 60-Hz Half-Sine-Wave Cycles FIGURE 5 110 1 70 100 4 P a ~Maximum Continuous Anode Power DissipatedW 2 4 7? 10 20 40 79 100 J-Continuous Anode Forward CurrentA FIGURE 4 TRANSIENT THERMAL RESISTANCE vs CYCLES OF CURRENT DURATION Re Jc(t) Transient Thermal Resistance~C/W 2 4 7 10 20 40 = =70 100 Consecutive 60-Hz Half-Sine-Wave Cycles FIGURE 6 NOTE 7: This curve shows the maximum number of cycles of surge current for which gate control is guaranteed provided the device Is initially at nonoperating thermal! equiflbrium. 7-48 TEXAS 47 INSTRUMENTS NC GRPGRATE POST OFFICE BOX 5012 + DALLAS, TEXAS 75222SERIES TIC106 P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS TYPICAL CHARACTERISTICS GATE TRIGGER CURRENT GATE TRIGGER VOLTAGE vs vs CASE TEMPERATURE CASE TEMPERATURE VAA=6V Ry = 1002 tplg) = 20 us VaA=8V RL = 100 2 Rox =1k2 tpigh > 20 us |G 7Gate Trigger CurrentA VGTGate Trigger VoltageV 50-25 o 2 880 675 6100 (125 -50 -25 0 2 50 75 100 125 Tc~Case TemperatureC ToCase TemperatureC FIGURE 7 FIGURE 8 GATE FORWARD VOLTAGE HOLDING CURRENT vs vs GATE FORWARD CURRENT CASE TEMPERATURE 10 10 la= 9 TCT = 28C gLVaAa=6V 7 ReK = tka > 4 6 tnitiating 7 = 10mA z < & 8 3? i g e * Bo 5 w 2 3 eg O07 3 3 3 1 04 T o x 2 > 0.2 0.1 1 0.1 04 #1 2 4 10 20 40 100 400 1000 -50 25 Qo 25 50 75 100-125 IgpGate Forward CurrentmA TcCase TemperatureC FIGURE 9 FIGURE 10 NOTE 6: This parameter must be measured using pulse techniques, ty, = 300 us, duty cycle < 2%. Voltage-sensing contacts, separate from the current-carrying contacts, sre jocated within 0.125 inch from the davice body. TEXAS, INSTRUMENTS 7-49 NCORPORATED POST OPFICE BOX S012 OALLAS, TEXAS 752227-50 SERIES TIC106 P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS TYPICAL CHARACTERISTICS PEAK ON-STATE VOLTAGE vs PEAK-ON-STATE CURRENT 25 TT To= 28C See Note 6 > 20 i $ ~ 16 2 | G iH LT | ~ 10 = fo = = 0.5 o 01 #02 04 0.71 2 4 710 20 40 l7MPeak On-State CurrentA FIGURE 11 GATE-CONTROLLED TURN-ON TIME CIRCUIT-COMMUTATED TURN-OFF TIME vs vs GATE CURRENT CASE TEMPERATURE 10 16 VaAA=30V Vana 30V> Vin = 50 V a o R. =62 - 44L AL=62 a L* z ! 8 ReKleff) = 5k2 a= IRM = 8A g tpig) # 20 us F 42 L See Figure 2 F * = . To =25C o 9 See Figure 1 E 6 2 10 = F 2 g Le 3 P of pty o 5 E BE 4 E 6 $ 3 g s a4 oO l a & 2 0 QO 0.1 0.2 04 07 1 2 4 7 10 20 40 60 80 100 120 \GGate Current~mA TcCase TemperatureC FIGURE 12 FIGURE 13 NOTE 6: This parameter must be measured using pulse techniques. ty, = 300 us, duty cycle < 2%. Voltage-sensing contacts, separste from the current-carrying contacts, are located within 0.1265 inch from the device body, PRINTED IN USA a Ti connot assume ony responsibility for any circuits shown TEXAS INST RUM ENTS or represent that they are free from potent infringement. INCORPORATED POST OFFICE BOX $012 + DALLAS, TEXAS 75222 TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.