MUR420 Vishay Semiconductors Ultrafast Plastic Rectifier Major Ratings and Characteristics IF(AV) 4.0 A VRRM 200 V IFSM 150 A trr 25 ns VF 0.710 V Tj max. 175 C DO-201AD Features Typical Applications * * * * * * * For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer and Telecommunication Glass passivated chip junction Ultrafast reverse recovery time Low forward voltage drop Low leakage current Low switching losses, high efficiency High forward surge capability Solder Dip 260 C, 40 seconds Mechanical Data Case: DO-201AD Epoxy meets UL-94V-0 Flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade Polarity: Color band denotes cathode end Maximum Ratings TA = 25 C unless otherwise specified Symbol Value Unit Maximum repetitive peak reverse voltage Parameter VRRM 200 V Working peak reverse voltage VRWM 200 V Maximum DC blocking voltage VDC 200 V Maximum average forward rectified current at TA = 80 C (See figure 1) IF(AV) 4.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A TJ, TSTG - 65 to + 175 C Operating junction and storage temperature range Document Number 88685 21-Jul-05 www.vishay.com 1 MUR420 Vishay Semiconductors Electrical Characteristics TA = 25 C unless otherwise specified Parameter Symbol Value Unit VF 0.710 0.875 0.890 V forward voltage (1) at 3.0 A, TJ = 150 C at 3.0 A, TJ = 25 C at 4.0 A, TJ = 25 C Test condition Maximum instantaneous reverse current at rated DC TJ = 25 C TJ = 150 C IR 5.0 150 A Maximum reverse recovery time at IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 25 ns Maximum reverse recovery time at IF = 1.0 A, di/dt = 50 A/s, VR = 30 V, Irr = 10 % IRM trr 35 ns Maximum forward recovery time IF = 1.0 A, di/dt = 100 A/s, Rec. to 1.0 V tfr 25 ns Symbol Value Unit RJA 28 C/W Maximum instantaneous blocking voltage (1) Notes: (1) Pulse test: tp = 300 s, duty cycle 2 % Thermal Characteristics TA = 25 C unless otherwise specified Parameter Typical thermal resistance junction to ambient (1) Notes: (1) Lead length = 1/2" on P.C. board with 1/2" x 1/2" copper surface Ratings and Characteristics Curves (TA = 25 C unless otherwise noted) 150 Peak Forward Surge Current (A) Average Forward Current (A) 8.0 6.0 4.0 2.0 100 75 50 25 0 0 0 25 50 75 100 125 150 Ambient Temperature (C) Figure 1. Forward Current Derating Curve www.vishay.com 2 125 175 1 10 100 Number of Cycles at 60 HZ Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Document Number 88685 21-Jul-05 MUR420 Vishay Semiconductors Instantaneous Forward Current (A) 100 1000 TJ = 175 C Junction Capacitance (pF) 10 TJ = 100 C 1 TJ = 25 C 0.1 100 10 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1 0.1 1.4 Instantaneous Forward Voltage (V) 1 10 100 Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Figure 5. Typical Junction Capacitance 1000 TJ = 175 C Instantaneous Reverse Leakage Current (A) 100 10 TJ = 100 C 1 0.1 TJ = 25 C 0.01 0.001 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Figure 4. Typical Reverse Leakage Characteristics Package outline dimensions in inches (millimeters) DO-201AD 1.0 (25.4) Min. 0.210 (5.3) 0.190 (4.8) Dia. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) Min. 0.052 (1.32) 0.048 (1.22) Dia. Document Number 88685 21-Jul-05 www.vishay.com 3