MUR420
Document Number 88685
21-Jul-05
Vishay Semiconductors
www.vishay.com
1
DO-201AD
Ultrafast Plastic Rectifier
Major Ratings and Characteristics
IF(AV) 4.0 A
VRRM 200 V
IFSM 150 A
trr 25 ns
VF0.710 V
Tj max. 175 °C
Features
• Glass passivated chip junction
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low leakage current
• Low switching losses, high efficiency
• High forward surge capability
• Solder Dip 260 °C, 40 seconds
Typical Applications
For use in high frequency rectification and freewheel-
ing application in switching mode converters and
inverters for consumer, computer and Telecommuni-
cation
Mechanical Data
Case: DO-201AD
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: Color band denotes cathode end
Maximum Ratings
TA = 25 °C unless otherwise specified
Parameter Symbol Value Unit
Maximum repetitive peak reverse voltage VRRM 200 V
Working peak reverse voltage VRWM 200 V
Maximum DC blocking voltage VDC 200 V
Maximum average forward rectified current at TA = 80 °C
(See figure 1)
IF(AV) 4.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM 150 A
Operating junction and storage temperature range TJ, TSTG - 65 to + 175 °C
www.vishay.com
2
Document Number 88685
21-Jul-05
MUR420
Vishay Semiconductors
Electrical Characteristics
TA = 25 °C unless otherwise specified
Notes:
(1) Pulse test: tp = 300 µs, duty cycle ≤ 2 %
Thermal Characteristics
TA = 25 °C unless otherwise specified
Notes:
(1) Lead length = 1/2" on P.C. board with 1/2" x 1/2" copper surface
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
Parameter Test condition Symbol Value Unit
Maximum instantaneous
forward voltage (1)
at 3.0 A, TJ = 150 °C
at 3.0 A, TJ = 25 °C
at 4.0 A, TJ = 25 °C
VF 0.710
0.875
0.890
V
Maximum instantaneous
reverse current at rated DC
blocking voltage (1)
TJ = 25 °C
TJ = 150 °C
IR 5.0
150
µA
Maximum reverse recovery
time
at IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr 25 ns
Maximum reverse recovery
time
at IF = 1.0 A, di/dt = 50 A/µs,
VR = 30 V, Irr = 10 % IRM
trr 35 ns
Maximum forward recovery
time
IF = 1.0 A, di/dt = 100 A/µs,
Rec. to 1.0 V
tfr 25 ns
Parameter Symbol Value Unit
Typical thermal resistance junction to ambient (1) RθJA 28 °C/W
Figure 1. Forward Current Derating Curve
0
2.0
4.0
6.0
8.0
Average Forward Current (A)
Ambient Temperature (°C)
025 50 75 100 125 150 175
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
0
50
75
100
125
150
25
1 10010
Peak Forward Surge Current (A)
Number of Cycles at 60 H
Z
MUR420
Document Number 88685
21-Jul-05
Vishay Semiconductors
www.vishay.com
3
Package outline dimensions in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Leakage Characteristics
0.40.2 0.6 0.8 1.0 1.2 1.4
Instantaneous Forward Voltage (V)
0.01
0.1
10
100
1
Instantaneous Forward Current (A)
T
J
= 175 °C
T
J
=25°C
T
J
= 100 °C
020 6040 10080
Instantaneous Reverse
Leakage Current (μA)
Percent of Rated Peak Reverse Voltage (%)
0.001
0.01
0.1
1
10
100
1000
T
J
= 175 °C
T
J
= 100 °C
T
J
=25°C
Figure 5. Typical Junction Capacitance
Reverse Voltage (V)
Junction Capacitance (pF)
10.1 10 100
1000
10
100
1
0.210 (5.3)
0.190 (4.8)
Dia.
0.052 (1.32)
0.048 (1.22)
Dia.
1.0 (25.4)
Min.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
Min.
DO-201AD
