BA895 Silicon PIN Diode Current-controlled RF resistor 2 for switching and attenuating applications Frequency range 1 MHz ... 2 GHz Especially useful as antenna switch in TV-sat tuners 1 VES05991 Type Marking Pin Configuration Package BA895 R 1=C SCD80 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 50 V Forward current IF 50 mA Operating temperature range Top -55... 150 C Storage temperature Tstg -55... 150 Value Unit Thermal Resistance Junction - soldering point1) RthJS 95 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jul-11-2001 BA895 Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Parameter Values Unit min. typ. max. IR - - 10 nA VF - - 1.1 V DC characteristics per diode Reverse current VR = 30 V Forward voltage IF = 50 mA AC characteristics Diode capacitance pF CT VR = 0 V, f = 100 MHz - 0.22 0.4 VR = 10 V, f = 1 MHz - 0.23 0.6 Forward resistance rf IF = 1.5 mA, f = 100 MHz - 22 40 IF = 10 mA, f = 100 MHz - 4.5 7 Zero bias conductance S gp VR = 0 V, f = 100 MHz - 60 - VR = 0 V, f = 1 GHz - 120 - rr - 1.7 - s Ls - 0.8 - nH Charge carrier life time IF = 10 mA, IR = 6 mA, IR = 3 mA Series inductance 1) in antiparallel connection 2 Jul-11-2001 BA895 Forward current IF = f (TS ) Forward current IF = f (VF ) T A = 25C 10 -1 60 mA mA 10 -2 IF IF 40 10 -3 30 20 10 -4 10 0 0 20 40 60 80 120 C 100 10 -5 0.4 150 0.5 0.6 0.7 0.8 0.9 TS V 1.1 VF Permissible Pulse Load Permissible Pulse Load RthJS = f(tp ) IFmax / IFDC = f(tp) 10 1 10 3 IFmax / IFDC RthJS K/W 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 - 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 tp 3 Jul-11-2001 0 BA895 Diode capacitance CT = f (VR) Forward resistance rf = f(IF) f = 100MHz f = Parameter 10 3 0.50 pF Ohm 0.40 10 2 rf CT 0.35 0.30 f=1MHz f=1GHz 0.25 0.20 10 1 0.15 0.10 0.05 0.00 0 4 8 12 16 20 24 V 10 0 -2 10 30 VR 10 -1 10 0 10 1 mA 10 IF 4 Jul-11-2001 2