BA895
Jul-11-20011
Silicon PIN Diode
Current-controlled RF resistor
for switching and attenuating applications
Frequency range 1 MHz ... 2 GHz
Especially useful as antenna switch
in TV-sat tuners
1VES05991
2
Type Marking Pin Configuration Package
BA895 R 1 = C 2 = A SCD80
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage VR50 V
Forward current IF50 mA
Operating temperature range Top -55... 150 °C
Storage temperature Tst
g
-55... 150
Thermal Resistance
Junction - soldering point1) RthJS
95 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
BA895
Jul-11-20012
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC characteristics per diode
Reverse current
VR = 30 V IR- - 10 nA
Forward voltage
IF = 50 mA VF- - 1.1 V
AC characteristics
Diode capacitance
VR = 0 V, f = 100 MHz
VR = 10 V, f = 1 MHz
CT
-
-
0.22
0.23
0.4
0.6
pF
Forward resistance
IF = 1.5 mA, f = 100 MHz
IF = 10 mA, f = 100 MHz
rf
-
-
22
4.5
40
7
Zero bias conductance
VR = 0 V, f = 100 MHz
VR = 0 V, f = 1 GHz
gp
-
-
60
120
-
-
S
Charge carrier life time
IF = 10 mA, IR = 6 mA, IR = 3 mA
rr - 1.7 - µs
Series inductance Ls- 0.8 - nH
1) in antiparallel connection
BA895
Jul-11-20013
Forward current IF = f (TS)
0 20 40 60 80 100 120 °C 150
TS
0
10
20
30
40
mA
60
I
F
Forward current IF = f (VF)
TA = 25°C
0.4 0.5 0.6 0.7 0.8 0.9 V1.1
VF
-5
10
-4
10
-3
10
-2
10
-1
10
mA
I
F
Permissible Pulse Load RthJS = f(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
IFmax / IFDC = f(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
-
I
Fmax
/ I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
BA895
Jul-11-20014
Diode capacitance CT = f (VR)
f = Parameter
0 4 8 12 16 20 24 V30
VR
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
pF
0.50
C
T
f=1MHz
f=1GHz
Forward resistance rf = f(IF)
f = 100MHz
10 -2 10 -1 10 0 10 1 10 2
mA
IF
0
10
1
10
2
10
3
10
Ohm
r
f
