Document Number: 91028 www.vishay.com
S11-1046-Rev. D, 30-May-11 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Power MOSFET
IRF620S, SiHF620S
Vishay Siliconix
FEATURES
•Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
•Fast Switching
• Simple Drive Requirements
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 6.1 mH, Rg = 25 , IAS = 5.2 A (see fig. 12).
c. ISD 5.2 A, dI/dt 95 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
PRODUCT SUMMARY
VDS (V) 200
RDS(on) ()V
GS = 10 V 0.80
Qg (Max.) (nC) 14
Qgs (nC) 3.0
Qgd (nC) 7.9
Configuration Single
N-Channel MOSFET
G
D
S
D
2
PAK (TO-263)
GD
S
ORDERING INFORMATION
Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHF620S-GE3 SiHF620STRL-GE3aSiHF620STRR-GE3a
Lead (Pb)-free IRF620SPbF IRF620STRLPbFaIRF620STRRPbFa
SiHF620S-E3 SiHF620STL-E3aSiHF620STR-E3a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 200 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current VGS at 10 V TC = 25 °C ID
5.2
A
TC = 100 °C 3.3
Pulsed Drain CurrentaIDM 18
Linear Derating Factor 0.40 W/°C
Linear Derating Factor (PCB Mount)e0.025
Single Pulse Avalanche EnergybEAS 110 mJ
Avalanche CurrentaIAR 5.2 A
Repetitive Avalanche EnergyaEAR 5.0 mJ
Maximum Power Dissipation TC = 25 °C PD
50 W
Maximum Power Dissipation (PCB Mount)eTA = 25 °C 3.0
Peak Diode Recovery dV/dtcdV/dt 5.0 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C
Soldering Recommendations (Peak Temperature) for 10 s 300d
* Pb containing terminations are not RoHS compliant, exemptions may apply