PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
* 100 Volt VCEO
* Gain of 20 at IC = 0.5 Amp
*P
tot=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL 2N6728 2N6729 2N6730 UNIT
Collector-Base Voltage VCBO -60 -80 -100 V
Collector-Emitter Voltage VCEO -60 -80 -100 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -2 A
Continuous Collector Current IC-1 A
Power Dissipation at Tamb
= 25°C Ptot 1W
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL 2N6728 2N6729 2N6730 UNIT CONDITIONS.
MIN. MAX MIN. MAX MIN. MAX
Collector-Base
Breakdown Voltage
V(BR)CBO -60 -80 -100 V IC
=-0.1mA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO -60 -80 -100 V IC
=-1mA, IB
=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO -5 -5 -5 V IE=-1mA, IC
=0
Collector Cut-Off
Current
ICBO -1
-1
-1
µA
µA
µA
VCB
=-60V, IE=0
VCB
=-80V, IE=0
VCB
=-100V, IE=0
Emitter Cut-Off
Current
IEBO -1 -1 -1 µAVEB
=-5V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat) -0.5
-0.35
-0.5
-0.35
-0.5
-0.35
VI
C
=-250mA,IB
=-10mA*
IC
=-250mA,IB
=-25mA*
Base-Emitter
Turn-On Voltage
VBE(on) -1.2 -1.2 -1.2 V IC=-250mA, VCE=-1V*
Static Forward
Current Transfer
Ratio
hFE 80
50
20
250
80
50
20
250
80
50
20
250
IC
=-50mA, VCE=-1V*
IC
=-250mA, VCE=-1V*
IC
=-500mA, VCE=-1V*
Transition
Frequency
fT50 500 50 500 50 500 MHz IC
=-50mA, VCE=-10V
Collector Base
Capacitance
CCB 30 30 30 pF VCE
=-10V, f=1MHz
E-Line
TO92 Compatible
2N6728
2N6729
2N6730
3-9
C
B
E
