Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor's system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDN5630 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS(ON) in a small SOT23 footprint. Fairchild's PowerTrench technology provides faster switching than other MOSFETs with comparable RDS(ON) specifications. The result is higher overall efficiency with less board space. * 1.7 A, 60 V. RDS(ON) = 0.100 @ VGS = 10 V RDS(ON) = 0.120 @ VGS = 6 V. * Optimized for use in high frequency DC/DC converters. * Low gate charge. * Very fast switching. * SuperSOTTM - 3 provides low RDS(ON) in SOT23 footprint. Applications * * DC/DC converter Motor drives D D S TM SuperSOT -3 G G Absolute Maximum Ratings Symbol S TA = 25 C unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage 20 V ID Drain Current 1.7 A - Continuous (Note 1a) - Pulsed PD Power Dissipation for Single Operation 10 (Note 1a) (Note 1b) TJ, Tstg Operating and Storage Junction Temperature Range 0.5 W 0.46 -55 to +150 C Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 C/W RJC Thermal Resistance, Junction-to-Case (Note 1) 75 C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity 5630 FDN5630 7 8mm 3000 units 2000 Fairchild Semiconductor Corporation FDN5630 Rev. 3.3 FDN5630 October 2015 Symbol TA = 25 C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS TJ IDSS Breakdown Voltage Temperature Coefficient ID = 250 A,Referenced to 25C Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 A IGSSF Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 20 V, VDS = 0 V 100 nA VGS = -20 V, VDS = 0 V -100 nA IGSSR On Characteristics 60 V 63 mV/C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A VGS(th) TJ RDS(ON) Gate Threshold Voltage Temperature Coefficient ID = 250 A,Referenced to 25C Static Drain-Source On-Resistance ID(on) On-State Drain Current VGS = 10 V, ID = 1.7 A VGS = 10 V, ID = 1.7 A, TJ = 125C VGS = 6 V, ID = 1.6 A VGS = 10 V, VDS = 1.7 V gFS Forward Transconductance VDS = 10 V, ID = 1.7 A 6 VDS = 15 V, VGS = 0 V, f = 1.0 MHz 400 560 pF 65 95 pF 27 40 pF 10 20 ns 1 2.4 3 -6.9 0.073 0.127 0.083 V mV/C 0.100 0.180 0.120 5 A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 2) VDD = 30 V, ID = 1 A, VGS = 10 V, RGEN = 6 VDS = 20 V, ID = 1.7 A, VGS = 10 V, 6 15 ns 15 28 ns 5 15 ns 7 10 nC 1.6 nC 1.2 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.42 A (Note 2) 0.42 A 1.2 V 0.72 Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design. a) 250C/W when mounted on a 0.02 in2 Pad of 2 oz. Cu. b) 270C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% FDN5630 Rev. 3.3 FDN5630 Electrical Characteristics FDN5630 Typical Characteristics 10 1.5 5.0V 6.0V 8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 10V 4.5V 6 4.0V 4 2 3.5V 1.4 VGS = 4.5V 1.3 5.0V 1.2 6.0V 1.1 7.0V 10V 1 0 0 1 2 3 4 0.9 5 0 VDS, DRAIN-SOURCE VOLTAGE (V) 2 4 6 8 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.25 ID =1.7A VGS = 10V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 1.8 1.6 1.4 1.2 1 0.8 0.6 ID = 1.7A 0.2 0.15 TA = 125oC 0.1 TA = 25oC 0.05 0 0.4 -50 -25 0 25 50 75 100 125 2 150 4 Figure 3. On-Resistance Variation with Temperature. 8 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 10 VDS =5V 25oC IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 6 VGS, GATE TO SOURCE VOLTAGE (V) o TJ, JUNCTION TEMPERATURE ( C) 8 6 o 125 C o TA = -55 C 4 2 0 VGS=0 1 TJ=125oC 0.1 25oC o -55 C 0.01 0.001 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDN5630 Rev. 3.3 (continued) 10 600 VDS = 10V ID = 1.7A 20V 8 f = 1MHz VGS = 0 V 500 30V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) FDN5630 Typical Characteristics 6 4 2 CISS 400 300 200 COSS 100 CRSS 0 0 0 2 4 6 0 8 10 30 40 10 SINGLE PULSE o RJA=270 C/W 16 10ms o TA=25 C POWER (W) 100ms 1s 10s DC VGS = 10V SINGLE PULSE RJA = 270oC/W 0.1 60 20 100s 1ms RDS(ON) LIMIT 1 50 Figure 8. Capacitance Characteristics. Figure 7. Gate Charge Characteristics. 12 8 4 TA = 25oC 0 0.01 0.1 1 10 0.0001 100 0.001 VDS, DRAIN-SOURCE VOLTAGE (V) 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 0.5 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.2 R JA (t) = r(t) * RJA R JA = 270 C/W 0.1 0.05 0.02 0.01 P(pk) t1 Single Pulse t2 0.005 TJ - TA = P * RJA (t) 0.002 Duty Cycle, D = t1 /t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 300 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design. FDN5630 Rev. 3.3 2.920.12 0.95 A 3 1.40 B 1.400.12 1 2.20 2 0.508 0.382 (0.29) 0.10 0.95 M 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.12 MAX 0.10 0.00 (0.94) 0.10 C M C 2.510.20 GAGE PLANE NOTES: UNLESS OTHERWISE SPECIFIED 0.178 0.102 0.20 0.43 0.33 (0.56) SCALE: 50:1 SEATING PLANE A) NO JEDEC REFERENCE AS OF AUGUST 2003 B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 2009. E) DRAWING FILE NAME: MKT-MA03BREV3 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com (c) Semiconductor Components Industries, LLC N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com