OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue A 05/06
Page 1 of 4
Hermetic Infrared Emitting Diode
OP130 Series
Description:
Each OP130 series device is a 935 nm gallium arsenide (GaAs) infrared LED mounted in a hermetically sealed
TO-46 package that provides an enhanced temperature range with a variety of power ranges The TO-46 housing
also offers high power dissipation and superior protection for hostile environments.
Each OP130 device has a narrow beam with an inclusive angle at half power points of 18°. Each OP130W series
device has a broad irradiance pattern of 50° at half power points, providing relatively even illumination over a large
area. These devices are designed to efficiently operate with OP800, OP593, OP598 and OP599 ph ototransistors
or the OP830 photodarlington.
Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data.
Custom electrical, wire and cabling and connectors are available. Contact your local representative or OPTEK for
more information.
Features:
TO-46 hermetically sealed package
Focused and non-focused optical light pattern
Enhanced temperature range
Mechanically and spectrally matched to other OPTEK devices
Choice of power ranges
Choice of narrow or wide irradiance pattern
Applications:
Non-contact reflective object sensor
Assembly line automation
Machine automation
Machine safety
End of travel sensor
Door sensor
“W”
Ordering Information
Part
Number LED Peak
Wavelength
Output Power
(mW/cm2)
Min / Max
Lens
Type Total Beam
Angle
Lead
Length
(Min)
OP130 1.0 / NA
Dome 18°
0.50"
OP131 3.0 / NA
OP132 4.0 / NA
OP133 5.0 / NA
OP130W 1.0 / NA
Flat 50°
OP131W 3.0 / NA
OP132W 4.0 / NA
OP133W 5.0 / NA
935 nm
RoHS
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue A 05/06
Page 2 of 4
Hermetic Infrared Emitting Diode
OP130 Series
OP130, OP131, OP132, OP133
OP130W, OP131W, OP132W, OP133W
Pin # LED
1 Anode
2 Cathode
Cathode
Anode
INCHES
[MILLIMETERS]
DIMENSIONS ARE IN:
INCHES
[MILLIMETERS]
DIMENSIONS ARE IN:
Cathode
Anode
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue A 05/06
Page 3 of 4
Hermetic Infrared Emitting Diode
OP130 Series
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Storage Temperature Range -65o C to +150o C
Reverse Voltage 2.0 A
Continuous Forward Current 100 mA
Peak Forward Current 10.0 A
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260° C(1)(2)
Power Dissipation 200 mW(3)
Operating Temperature Range -65o C to +125o C
Notes:
1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
2. Derate linearly 2.0 mW/° C above 25° C.
3. Measurement made with 100 µs pulse measured at the trailing edge of the pulse with a duty cycle of 0.1% and an IF = 100 mA.
Electrical Characteristics (TA = 25°C unless otherwise noted)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Input Diode
PO
Radiant Power Output
OP130, OP130W
OP131, OP131W
OP132, OP132W
OP133, OP133W
1.0
3.0
4.0
5.0
-
-
-
-
-
-
-
-
mW
IF = 100 mA(3 )
VF Forward Voltage - - 1.75 V
IF = 100 mA (3)
IR Reverse Current - - 100 µA
VR= 2.0 V
λP Wavelength at Peak Emission - 935 - nm IF = 10 mA
β Spectral Bandwidth between Half Power
Points - 50 - nm IF = 10 mA
Electrical Characteristics (TA = 25°C unless otherwise noted — for reference only)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Input Diode
∆λP /T Spectral Shift with Temperature - +0.30 - nm/°C IF = Constant
θHP
Emission Angle at Half Power Points
OP130 series
OP130W series
-
-
18
50
-
-
Degree
I
F = 100 mA
tr Output Rise Time - 1000 - ns IF(PK)=100 mA, PW=10 µs, and
D.C.=10.0%
tf Output Fall Time - 500 - ns
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue A 05/06
Page 4 of 4
Hermetic Infrared Emitting Diode
OP130 Series
Distance vs Output Power vs Forward Current
0
1
2
3
4
5
6
7
8
9
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Distance (inches)
Normalized Output Power
10 mA
20 mA
30 mA
40 mA
50 mA
60 mA
80 mA
100 mA
Normal iz ed at 0.6" and 50 m A
Forward Current
Forward Voltage vs Forward Current vs
Temperature
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
0 5 10 15 20 25 30 35 40 45
Forward Cu rren t (m A)
Typical Forward V ol tage (V)
-65°C
-40°C
-20°C
+0°C
+20°C
+40°C
+60°C
+80°C
+100°C
+125°C
OP130 Series (including “W” devices)
Optical Power vs I
F
vs Tem p
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 5 10 15 20 25 30 35 40 45 50
Forward Current I
F
(mA)
Normalized Optical Power
-65°C
-40°C
-20°C
+0°C
+20°C
+40°C
+60°C
+80°C
+100°C
+125°C
Normalized at 20 mA and 20
o
C