LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon BC857BRLT1 3 COLLECTOR is LRC prefered Device 1 BASE 3 2 EMITTER 1 2 CASE 318-08, STYLE 6 MAXIMUM RATINGS Rating SOT- 23 (TO-236AB) Symbol Value Unit Collector-Emitter Voltage V CEO -50 V Collector-Base Voltage V CBO -60 V Emitter-Base Voltage V -6.0 V EBO Collector Current -- Continuous IC -150 mAdc Collector power dissipation PC 0.2 W Junction temperature Tj 150 C Storage temperature T stg -55 ~+150 C DEVICE MARKING BC857BRLT1 =G3F ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Collector-Emitter Breakdown Voltage (IC = -1 mA) Emitter-Base Breakdown Voltage (IE = - 50 A) Collector-Base Breakdown Voltage (IC = - 50 A) Collector Cutoff Current (VCB = - 60 V) Emitter cutoff current (VEB = - 6 V) Collector-emitter saturation voltage (IC/ IB = - 50 mA / - 5m A) DC current transfer ratio (V CE = - 6 V, I C= -1mA) Transition frequency (V CE = - 12 V, I E= 2mA, f=30MHz ) Output capacitance (V CB = - 12 V, I E= 0A, f =1MHz ) Symbol Min Typ Max Unit V - 50 -- -- V V (BR)EBO -6 -- -- V V - 60 -- -- V I CBO -- -- - 0.1 A I EBO -- -- - 0.1 A V CE(sat) -- -- -0.5 V h FE 120 -- 560 -- fT -- 140 -- MHz C ob -- 4.0 5.0 pF (BR)CEO (BR)CBO h FE values are classified as follows: * hFE Q 120~270 R 180~390 S 270~560 M35-1/3 LESHAN RADIO COMPANY, LTD. BC857BRLT1 Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics( ) -50 I C, COLLECTOR CURRENT (mA) I C, COLLECTOR CURRENT (mA) -20 -35.0 -10 VCE= -10 V T A = 100C 25C - 40C -10 -50 -2 -1 -0.5 T A = 25C -28.0 -8 -24.5 -21.0 -6 -17.5 -14.0 -4 -10.5 -7.0 -2 -3.5A -0.2 -0.1 I B =0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 0 -1.6 -0.4 -0.8 -1.2 -1.6 -2.0 V CE , COLLECTOR TO EMITTER VOLTAGE (V) V BE , BASE TO EMITTER VOLTAGE(V) Fig.3 Grounded emitter output characteristics( ) Fig.4 DC current gain vs. collector current ( ) -100 500 T A = 25C -80 -60 VCE= -5 V -3V -1V T A = 25C 500 450 400 350 300 h FE, DC CURRENT GAIN I C, COLLECTOR CURRENT (mA) -31.5 -250 -200 -150 -40 -100 -20 -50 A 200 100 50 I B =0 0 0 -1 -2 -3 -4 -5 -0.2 V CE , COLLECTOR TO EMITTER VOLTAGE (V) -0.5 -1 -2 -5 -10 -20 -50 -100 I C, COLLECTOR CURRENT (mA) Fig.6 Collector-emitter saturation voltage vs. Fig.5 DC current gain vs. collector current ( ) 500 V CE(sat), COLLECTOR SATURATION VOLTAGE(V) collector current ( ) T A = 100C h FE, DC CURRENT GAIN 25C -40C 200 100 50 VCE= - 6V -0.2 -0.5 -1 -2 -5 -10 -20 I C, COLLECTOR CURRENT (mA) -50 -100 -1 T A = 25C -0.5 -0.2 I C /I B = 50 20 -0.1 10 -0.05 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 I C, COLLECTOR CURRENT (mA) M35-2/3 LESHAN RADIO COMPANY, LTD. BC857BRLT1 Fig.8 Gain bandwidth product vs. emitter current 1000 -1 T A = 25C V CE = -12V f r , TRANSITION FREQUENCY(MHz) I C /I B = 10 -0.5 -0.2 T A = 100C 25C -40C -0.1 -0.05 -0.2 -0.5 -1 -2 -5 -10 -20 -50 500 200 100 50 -100 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 I E, EMITTER CURRENT (mA) I C, COLLECTOR CURRENT (mA) Fig.9 Collector output capacitance vs.collector-base voltage Emitter inputcapacitance vs. emitter-base voltage C ob , COLLECTOR OUTPUT CAPACITANCE( pF) C ib , EMITTER INPUT CAPACITANCE (pF) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) 20 T A = 25C f =1MHz I E = 0A I C = 0A C ib 10 C ob 5 2 -0.5 -1 -2 -5 -10 -20 V CB, COLLECTOR TO BASE VOLTAGE (V) V EB, EMITTER TO BASE VOLTAGE (V) M35-3/3