M35–1/3
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter V oltage V CEO –50 V
Collector–Base V oltage V CBO –60 V
Emitter–Base V oltage V EBO –6.0 V
Collector Current — Continuous I C–150 mAdc
Collector power dissipation P C0.2 W
Junction temperature T j150 °C
Storage temperature T stg -55
~
+150 °C
DEVICE MARKING
BC857BRLT1
=G3F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Collector–Emitter Breakdown Voltage V (BR)CEO – 50 — — V
(IC = –1 mA)
Emitter–Base Breakdown Voltage V (BR)EBO – 6 — — V
(IE = – 50 µA)
Collector–Base Breakdown V oltage V (BR)CBO – 60 — — V
(IC = – 50 µA)
Collector Cutoff Current I CBO — — – 0.1 µA
(VCB = – 60 V)
Emitter cutoff current I EBO — — – 0.1 µA
(VEB = – 6 V)
Collector-emitter saturation voltage V CE(sat) — — -0.5 V
(IC/ IB = – 50 mA / – 5m A)
DC current transfer ratio h FE 120 –– 560 ––
(V CE = – 6 V, I C= –1mA)
T ransition frequency f T— 140 –– MHz
(V CE = – 12 V, I E= 2mA, f=30MHz )
Output capacitance C ob — 4.0 5.0 pF
(V CB = – 12 V, I E= 0A, f =1MHz )
h FE values are classified as follows:
QRS
hFE 120~270 180~390 270~560
1
3
2
BC857BRLT1
is LRC prefered Device
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
2
EMITTER
3
COLLECTOR
1
BASE
*
M35–2/3
LESHAN RADIO COMPANY, LTD.
BC857BRLT1
–0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1.6
T A = 100°C
25°C
– 40°C
–50
–20
–10
–50
–2
–1
–0.5
–0.2
–0.1 0 –0.4 –0.8 –1.2 –1.6 –2.0
T A = 25°C
–10
–8
–6
–4
–2
0
I C, COLLECTOR CURRENT (mA)
Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics( )
Fig.3 Grounded emitter output characteristics( ) Fig.4 DC current gain vs. collector current ( )
Fig.5 DC current gain vs. collector current ( ) Fig.6 Collector-emitter saturation voltage vs.
collector current ( )
VCE= –10 V
V BE , BASE T O EMITTER VOLTAGE(V)
I C, COLLECTOR CURRENT (mA)
V CE , COLLECT OR TO EMITTER VOLTAGE (V)
–35.0
–31.5
–28.0
–24.5
–21.0
–17.5
–14.0
–10.5
–7.0
–3.5µA
I B =0
0 –1–2 –3 –4–5
T A = 25°C
–100
–80
–60
–40
–20
0
I C, COLLECTOR CURRENT (mA)
V CE , COLLECTOR T O EMITTER VOLTAGE (V)
–250
–200
–150
500
450
400
350
300
–100
–50 µA
I B =0
T A = 25°C
500
200
100
50
h FE, DC CURRENT GAIN
VCE= –5 V
–3V
–1V
I C, COLLECTOR CURRENT (mA)
–0.2 –0.5 –1 –2 –5 –10 –20 –50 –100
T A = 100°C
500
200
100
50
h FE, DC CURRENT GAIN
VCE= – 6V
I C, COLLECTOR CURRENT (mA)
–0.2 –0.5 –1 –2 –5 –10 –20 –50 –100
25°C
–40°C
–1
–0.5
–0.2
–0.1
–0.05
V CE(sat), COLLECTOR SATURATION VOLTAGE(V)
I C, COLLECTOR CURRENT (mA)
–0.2 –0.5 –1 –2 –5 –10 –20 –50 –100
T A = 25°C
I C /I B = 50
20
10
M35–3/3
LESHAN RADIO COMPANY, LTD.
Fig.7 Collector-emitter saturation voltage vs.
collector current ( )
–1
–0.5
–0.2
–0.1
–0.05
V CE(sat), COLLECTOR SATURA TION VOLTAGE(V)
I C, COLLECTOR CURRENT (mA)
–0.2 –0.5 –1 –2 –5 –10 –20 –50 –100
T A = 100°C
25°C
–40°C
I C /I B = 10
BC857BRLT1
Fig.8 Gain bandwidth product vs. emitter current
1000
500
200
100
50
f r , TRANSITION FREQUENCY(MHz)
I E, EMITTER CURRENT (mA)
–0.2 –0.5 –1 –2 –5 –10 –20 –50 –100
T A = 25°C
V CE = –12V
Fig.9 Collector output capacitance vs.collector-base voltage
Emitter inputcapacitance vs. emitter-base voltage
20
10
5
2
C ob , COLLECTOR OUTPUT CA PACIT ANCE( pF)
C ib , EMITTER INPUT CAPACIT ANCE (pF)
V CB, COLLECTOR T O BASE VOLTAGE (V)
V EB, EMITTER T O BASE VOLTAGE (V)
–0.5 –1 –2 –5 –10 –20
T A = 25°C
f =1MHz
I E = 0A
I C = 0A
C ib
C ob
