2N6660, VQ1004J/P
Vishay Siliconix
Document Number: 70222
S-04379—Rev. E, 16-Jul-01 www.vishay.com
11-1
N-Channel 60-V (D-S) Single and Quad MOSFETs
PRODUCT SUMMARY
Part Number V(BR)DSS Min (V) rDS(on) Max (W)VGS(th) (V) ID (A)
2N6660 3 @ VGS = 10 V 0.8 to 2 1.1
VQ1004J/P 60 3.5 @ VGS = 10 V 0.8 to 2.5 0.46
FEATURES BENEFITS APPLICATIONS
DLow On-Resistance: 1.3 W
DLow Threshold: 1.7 V
DLow Input Capacitance: 35 pF
DFast Switching Speed: 8 ns
DLow Input and Output Leakage
DLow Offset Voltage
DLow-Voltage Operation
DEasily Driven Without Buffer
DHigh-Speed Circuits
DLow Error Voltage
DDirect Logic-Level Interface: TTL/CMOS
DDrivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
DBattery Operated Systems
DSolid-State Relays
1
2 3
TO-205AD
(TO-39)
Top View
DG
S
Plastic: VQ1004J
Sidebraze: VQ1004P
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Top View
Dual-In-Line
D1D4
S1S4
G1G4
NC NC
G2G3
S2S3
D2D3
N
N
N
N
2N6660
Device Marking
Top View
VQ1004J
“S” fllxxyy
“S” = Siliconix Logo
f = Factory Code
ll = Lot T raceability
xxyy = Date Code
VQ1004P
“S” fllxxyy
Device Marking
Side View
2N6660
“S” fllxxyy
“S” = Siliconix Logo
f = Factory Code
ll = Lot T raceability
xxyy = Date Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Single Total Quad
Parameter Symbol 2N6660 VQ1004J VQ1004P VQ1004J/P Unit
Drain-Source Voltage VDS 60 60 60
Gate-Source Voltage VGS "20 "30 "20 V
Continuous Drain Current TC= 25_C1.1 0.46 "0.46
Continuous Drain Current
(TJ = 150_C) TC= 100_CID0.8 0.26 0.26 A
Pulsed Drain CurrentaIDM 3 2 2
TC= 25_C6.25 1.3 1.3 2
Power Dissipation TC= 100_CPD2.5 0.52 0.52 0.8 W
Thermal Resistance, Junction-to-AmbientbRthJA 170 0.96 0.96 62.5 _
Thermal Resistance, Junction-to-Case RthJC 20 _C/W
Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 _C
Notes
a. Pulse width limited by maximum junction temperature.
b. This parameter not registered with JEDEC.
2N6660, VQ1004J/P
Vishay Siliconix
www.vishay.com
11-2 Document Number: 70222
S-04379—Rev. E, 16-Jul-01
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N6660 VQ1004J/P
Parameter Symbol Test Conditions TypaMin Max Min Max Unit
Static
Drain-Source
Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 mA75 60 60 V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 1 mA 1.7 0.8 2 0.8 2.5 V
VDS = 0 V, VGS = "15 V "100 "100
Gate-Body Leakage IGSS TC = 125_C"500 "500 nA
VDS = 60 V, VGS = 0 V 10
VDS = 35 V, VGS = 0 V
Zero Gate VDS = 48 V, VGS = 0 V 1
m
Zero Gate
Voltage Drain Current IDSS TC = 125_C500 500 mA
VDS = 28 V, VGS = 0 V
TC = 125_C
On-State Drain CurrentbID(on) VDS = 10 V, VGS = 10 V 3 1.5 1.5 A
VGS = 5 V, ID = 0.3 Ad2 5 5
Drain-Source On-ResistancebrDS(on) VGS = 10 V, ID = 1 A 1.3 3 3.5 W
TC = 125_Cd2.4 4.2 4.9
Forward T ransconductancebgfs VDS = 10 V, ID = 0.5 A 350 170 170
Common Source
Output Conductancebgos VDS = 10 V, ID = 0.1 A 1mS
Diode Forward Voltage VSD IS = 0.99 A, VGS = 0 V 0.8 V
Dynamic
Input Capacitance Ciss 35 50 60
Output Capacitance Coss VDS = 24 V, VGS = 0 V 25 40 50
Reverse Transfer Capacitance Crss
VDS = 24 V, VGS = 0 V
f = 1 MHz 7 10 10 pF
Drain-Source Capacitance Cds 30 40
Switchingc
T urn-On Time tON VDD = 25 V, RL = 23 W
^
8 10 10
Turn-Off Time tOFF ID ^ 1 A, VGEN = 10 V
RG = 25 W8.5 10 10 ns
Notes
a. For DESIGN AID ONLY, not subject to production testing. VNDQ06
b. Pulse test: PW v80 ms duty cycle v1%.
c. Switching time is essentially independent of operating temperature.
d. This parameter not registered with JEDEC on 2N6660.
2N6660, VQ1004J/P
Vishay Siliconix
Document Number: 70222
S-04379—Rev. E, 16-Jul-01 www.vishay.com
11-3
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics Output Characteristics for Low Gate Drive
On-Resistance vs. Drain Current Normalized On-Resistance
vs. Junction Temperature
Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage
VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V)
VDS – Drain-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V)
ID – Drain Current (A) TJ – Junction Temperature (_C)
2.0 V
100
0 0.4 0.8 1.2 1.6 2.0
80
60
40
20
0
2.8 V
2.6 V
2.4 V
2.2 V
VGS = 10 V
2.0
012345
1.6
1.2
0.8
0.4
0
VGS = 10 V 8 V
7 V
6 V
5 V
4 V
3 V
2 V
1.0
0.8
0.6
002 10
0.4
0.2
468
125_C
25_C
VDS = 15 V
TJ = –55_C2.8
0 4 8 12 16 20
2.4
2.0
1.6
0
1.2
0.8
0.4
1.0 A
0.5 A
ID = 0.1 A
2.5
2.0
1.5
00 0.4 2.0
1.0
0.5
0.8 1.2 1.6
VGS = 10 V
2.25
2.00
1.75
0.50 –50 –10 150
1.50
1.25
30 70 110
1.00
0.75
VGS = 10 V
ID= 1.0 A
0.2 A
1.8 V
ID – Drain Current (A)
ID – Drain Current (mA)
ID – Drain Current (A)
rDS(on) – On-Resistance ( Ω )
rDS(on) – Drain-Source On-Resistance ( Ω )
rDS(on) – Drain-Source On-Resistance ( Ω )
(Normalized)
2N6660, VQ1004J/P
Vishay Siliconix
www.vishay.com
11-4 Document Number: 70222
S-04379—Rev. E, 16-Jul-01
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Threshold Region Capacitance
Gate Charge Load Condition Effects on Switching
Normalized Effective Transient
Thermal Impedance
t1 – Square Wave Pulse Duration (sec)
ID – Drain Current (A)
VDS – Drain-to-Source Voltage (V)VGS – Gate-to-Source Voltage (V)
Qg – Total Gate Charge (pC)
10
1
0.01 0.5
0.1
1.0 1.5 2.0
VDS = 5 V
25_C
–55_C125_C
TJ = 150_C
Coss
120
100
80
0010 50
60
40
20 30 40
20
Ciss
Crss
VGS = 0 V
f = 1 MHz
15.0
12.5
10.0
00 100 600
7.5
5.0
200 300 400
2.5
500
ID= 1.0 A
VDS = 30 V
48 V
0.1 1 10
100
10
1
50
20
5
2
VDD = 25 V
RG = 25 W
VGS = 0 to 10 V
td(off)
tr
td(on)
tf
0.1 10 K
1.0
0.01
0.1
1.0 10010 1 K
Normalized Effective Transient Thermal Impedance, Junction-to-Case (TO-205AD)
1. Duty Cycle, D =
2. Per Unit Base = RthJC = 20_C/W
3. TJM – TC = PDMZthJC(t)
t1
t2
t1
Notes:
PDM
t2
Duty Cycle = 0.5
0.2
0.1 Single Pulse
0.02
0.05
0.01
ID – Drain Current (mA)
C – Capacitance (pF)
VGS – Gate-to-Source Voltage (V)
t – Switching Time (ns)
