2N6660, VQ1004J/P
Vishay Siliconix
www.vishay.com
11-2 Document Number: 70222
S-04379—Rev. E, 16-Jul-01
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N6660 VQ1004J/P
Parameter Symbol Test Conditions TypaMin Max Min Max Unit
Static
Drain-Source
Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 mA75 60 60 V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 1 mA 1.7 0.8 2 0.8 2.5 V
VDS = 0 V, VGS = "15 V "100 "100
Gate-Body Leakage IGSS TC = 125_C"500 "500 nA
VDS = 60 V, VGS = 0 V 10
VDS = 35 V, VGS = 0 V
Zero Gate VDS = 48 V, VGS = 0 V 1
Zero Gate
Voltage Drain Current IDSS TC = 125_C500 500 mA
VDS = 28 V, VGS = 0 V
TC = 125_C
On-State Drain CurrentbID(on) VDS = 10 V, VGS = 10 V 3 1.5 1.5 A
VGS = 5 V, ID = 0.3 Ad2 5 5
Drain-Source On-ResistancebrDS(on) VGS = 10 V, ID = 1 A 1.3 3 3.5 W
TC = 125_Cd2.4 4.2 4.9
Forward T ransconductancebgfs VDS = 10 V, ID = 0.5 A 350 170 170
Common Source
Output Conductancebgos VDS = 10 V, ID = 0.1 A 1mS
Diode Forward Voltage VSD IS = 0.99 A, VGS = 0 V 0.8 V
Dynamic
Input Capacitance Ciss 35 50 60
Output Capacitance Coss VDS = 24 V, VGS = 0 V 25 40 50
Reverse Transfer Capacitance Crss
VDS = 24 V, VGS = 0 V
f = 1 MHz 7 10 10 pF
Drain-Source Capacitance Cds 30 40
Switchingc
T urn-On Time tON VDD = 25 V, RL = 23 W
8 10 10
Turn-Off Time tOFF ID ^ 1 A, VGEN = 10 V
RG = 25 W8.5 10 10 ns
Notes
a. For DESIGN AID ONLY, not subject to production testing. VNDQ06
b. Pulse test: PW v80 ms duty cycle v1%.
c. Switching time is essentially independent of operating temperature.
d. This parameter not registered with JEDEC on 2N6660.