A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
S
p
ecifications are sub
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ect to chan
g
e without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCES IC = 50 mA 60 V
BVCEO IC = 50 mA 33 V
BVEBO IE = 5.0 mA 4.0 V
ICBO VCB = 30 V 1.0 mA
hFE VCE = 5.0 V IC = 500 mA 10 100 ---
COB VCB = 30 V f = 1.0 MHz 25 pF
PG
ηD VCC = 28 V POUT = 15 W f = 400 MHz 10
50
dB
%
NPN SILICON RF POWER TRANSISTOR
MRF5176
PACKAGE STYLE .280 4L STUD
DESCRIPTION:
The ASI MRF5176 is Designed for
Class C Amplifiers in 225 to 400 MHz
Military Communication Equipment.
FEATURES:
• PG = 10 dB Typical at 400 MHz
• Economical .280” Stud Package
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 2.0 A
VCBO 60 V
VCEO 33 V
VEBO 4.0 V
PDISS 30 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θJC 6.0 °C/W
MINIMUM
inches / mm
.003 / 0.08
.270 / 6.86
.117 / 2.97
B
C
D
E
F
G
A
MAXIMUM
.285 / 7.24
.137 / 3.48
.007 / 0.18
inches / mm
H.245 / 6.22 .255 / 6.48
DIM
1.010 / 25.65 1.055 / 26.80
I
J.217 / 5.51
.220 / 5.59
K
.175 / 4.45
.285 / 7.24.275 / 6.99
.572 / 14.53
.640 / 16.26
.130 / 3.30
.230 /5.84
G
K
H
F
E
D C
B
45° A
#8-32 UNC
I
J
C
B
EE
