HARRIS SEMICONDUCTOR HA-5104/883 Low Noise, High Performance, Quad Operational Amplifier ao July 1994 Features This Circuit is Processed in Accordance to MIL-STD- 883 and Is Fully Conformant Under the Provisions of Paragraph 1.2.1. * Low Input Noise Voltage Density at 1kHz.. 6nVAHz (Max) 4.3nV/NHz (Typ) Slew Rate ........ 0. eee eee 1V/is (Min) 3V/us (Typ) e Unity Gain Bandwidth ................. 8MHz (Typ) * High Open Loop Gain (Full Temp) ....- 100kV/V (Min) 250kV/V (Typ) * High CMAR, PSRR (Full Temp)..........- 86dB (Min) 100dB (Typ) * Low Offset Voltage Drift .............. 3uV/C (Typ) No Crossover Distortion Standard Quad Pinout Description Low noise and high performance are key words describing the unity gain stable HA-5104/883. This general purpose quad amplifier offers an array of dynamic specifications including 1V/ys slew rate (min), and BMHz bandwidth (typ). Complementing these outstanens parameters are very low noise specifications of 4.3nV/VHz at 1kHz (typ) or 6nVAHz (max). Fabricated using the Harris standard high frequency D.I. pro- cess, these operational amplifiers also offer excellent input specifications such as 2.5mV (max) offset voltage and 75nA (max) offset currant. Complementing these specifications are 100dB (min) open loop gain and 55dB channel separa- tion (min). Economically, the HA-5104/883 also consumes a very moderate amount of power (225mW per package) while also saving board space and cost. This impressive combination of features make this amplifier ideally suited for designs ranging from audio amplifiers and active filters to the most demanding signa! conditioning and instrumentation circuits. Applications * High Q Active Filters Ordering Information Audio Amplifiers PART TEMPERATURE NUMBER RANGE PACKAGE Integrators ol 7 0 * Signal Generators HA1-5104/883 55C to+125C | 14 Lead CerDIP * instrumentation Amplifiers HA4-5104/883 -55C to +125C += 20 Lead Ceramic LCC Pinouts HA-5104/883 HA-5104/883 (CERDIP) TOP VIEW NA outs [7] ha] our 4 aN Eh qe NA am GB] Whi] ina +N LAs +INA nc Nc V+ Ea] 3] V- V+ v- Nc nc +IN2 a) +IN3 +IN2 [s| mH +IN3 -IN2 iP Kio -IN3 our? [7] [8] ours CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper |.C. Handling Procedures. Copyright Harris Corporation 1994 34114 Spec Number 511014-883 File Number 3710Specifications HA5104/883 Absolute Maximum Ratings Thermal information Voltage Between V+ and V- Terminals..............2.-05. 40V Thermal Resistance Oya Bic Differential Input Voltage... 6... cece eect e eee 7V GerDIP Package ............ se eeee 7T5CIW =. 20C/W Voltage at Either Input Terminal.....................- V+ to V- Ceramic LCC Package .............. 65C/(W15C/W Peak Output Current... 0.0.0.0... c cece eee eee eee Indefinite Package Power Dissipation Limit at +75C for Ty s +175C {One Amplifier Shorted to Ground) CerDIP Package ....... ese c eee cece re ete ners 1.33W Junction Tamperature (Ty)... 2... eee eee eee 4+175C Ceramic LCC Package ........... 0. cece cece neers 1.54W Storage Temperature Range ................. -65C to +150C Package Power Dissipation Derating Factor Above +75C ESD Rating. 00... 0. cece eee cece eee cee ee eee ee <2000V CerDIP Package... 0... cee eee ee eee ee eens 13.3mWPC Lead Temperature (Soldering 10s)............00.c eens +300C Ceramic LCC Package ........... cece eee eee ees 15.4mWPC CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Operating Conditions Operating Temperature Range. ............... -55C to +425C = Vincw Ss 1/2 (V+ - V-) Operating Supply Voltage... ...... 00... cece eee eee t6Vtot15V RL 2 2kQ TABLE 1. OC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: Vsuppry = 15V, Rsource = 1009, ALoap = 500kQ, Voyr = OV, Unlass Otherwise Specified. GROUP A LIMITS PARAMETERS SYMBOL CONDITIONS SUBGROUPS | TEMPERATURE MIN MAX UNITS input Offset Voltage Vio Vem = OV 1 +25C -2.5 2.5 mV a o 2,3 +125C, -55C -3.0 3.0 mV 5 ti Input Bias Current +lp vou = OV, 1 +25C -200 200 nA < zi Fee 1000" 2,3 +125C, 55C | 325 | 325 | nA Wis -lp Vom = OV, 1 +25C -200 200 nA Re Ka 2,3 +125C, 56C | -325 | 325 nA Input Offset Current lio Vom = OV, 1 +25C -75 75 nA Fee sone 2,3 +1250, 55C | -125 | 125 nA Common Mode Range +CMR V+ = 43V, V- = -27V 1 +25C +12 : Vv 24 +125C, -55C +12 - v -CMR V+ = 427V, V- = -3V 1 +25C : 12 v 23 +125C, -55C - 12 v Large Signal Voltage +Ayor Vour = OV and +10V, 4 +25C 100 - KVNV Gain Pu = 2k 5,6 +125C, 55C | 100 . KVIV Avo. | Vout = OV and -10V, 4 425C 100 . kV FL = 2ko 5,6 +128C, 65C | 100 . KV Common Mode +CMAR | AVcy = +5V, 1 +25C. 86 : dB Rejection Ratio va i, V- = -20V, 2,3 +125C, -55C 86 , dB -CMAR | AVoy = -5V, 1 +25C 86 . dB oN =10N, 2,3 +125C, 55C | 86 . dB Spec Number 511014-883 3-115Specifications HA5104/883 TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested at: Vguppry = t15V, Reource = 1002, Rigap = 500kQ, Vguz = OV, Unless Otherwise Specified. GROUP A LIMITS PARAMETERS SYMBOL CONDITIONS SUBGROUPS | TEMPERATURE MIN MAX UNITS Output Voltage Swing +VouTr: | Ry = 2kQ 1 +25C 10 - v 2,3 +125C, -55C 10 - v Vour: | AL =2ka 1 +25C - -10 v 2,3 +125C, -55C . -10 v +Voute | Ry = 10k2 1 +25C 12 - Vv 2,3 +125C, -55C 12 . v Vouta | Rp = 10k 1 +25C : 12 Vv 2,3 +125C, -55C : +12 Vv Output Current +lout Vout =-5V 1 +25C 10 - mA 2,3 +125C, -55C 10 - mA lout | Your = +5 1 +25C : -10 mA 2,9 +125C, -55C : -10 mA Quiescent Power Supply tloc Vout = OV, lour = OMA 1 425C : 6.5 mA Current 2,3 +125C, -65C - 75 mA lee | Your = OV, lour = OmA 1 +25C 6.5 - mA 2,3 +125C, -56C 7.5 - mA Power Supply +PSRR_ | AVgup = 10V, 1 +25C 86 : dB Rejection Ratlo Wn 120M, wey 2,3 +125C, 55C | 86 : dB -PSRR_ | AVgyp = 10V, 1 +25C 86 . dB ve = * BV - oy 2,3 +125C, 55C | 86 . dB TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Testad at: Vguppry = +15V, Resource = 502, Atgap = 2KQ, Croan = SOF, Ayo, = +1V/V, Uniess Otherwise Specified. LIMITS GROUP A PARAMETERS SYMBOL CONDITIONS SUBGROUPS | TEMPERATURE MIN MAX UNITS Slew Rate +SR Vout = -8V to +3V 4 +25C 1 . Vins SR | Voyy = 43V to -3V 4 +25C 1. - Vis Rise and Fall Time Tr Vout = 0 to +200mV 4 +25C - 200 ns 10% Tp < 90% Tr Vour = 0 to -200m 4 425C - 200 ns 10% s Tr $ 90% Overshoot +OS Vout = 0 to +200mV 4 +25C - 35 % -OS | Voyr = 0 to -200mv 4 +25C - 35 % Spec Number 511014-883 3-116Specifications HA5104/883 TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS Device Characterized at: Vgyppiy = t15V, Ryoap = 2kQ, Croan = 50pF, Ayo, = 1V/V, Uniess Otherwise Specified. LIMITS PARAMETERS SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS Differential Input Rin Vom = OV 1 +25C 250 - kQ Resistance | Input Noise Voltage Ey Rg = 200, 1 +25C - 6 nvHz Density fg = 1000Hz Input Noise Current ly Rg = 2MQ, 1 +25C - 3 pANHz Density fo = 1000Hz Full Power FPBW_ | Vpgax = 10V 1,2 +25C 32 - kHz Bandwidth Minimum Closed Loop CLSG Ry = 2kQ, C_ = 50pF 1 -55C to +4125C +1 - VV Stable Gain Output Resistance Rout Open Loop 1 +25C : 270 2 Quiescent Power PC Vout = OV, lout = OMA 1,9 -55C to +125C - 225 mw Consumption Channel Separation cs Rg = 1kQ, 1 +25C 55 - dB wu Ave = 100V/V, < 2 Vin = 100MVpEax at 5 rT 10kHz Referred to E i Input qa ca NOTES: Wi 1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param- o eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization based upon data from multiple production runs which reflect lot to lot and within lot variation. 2. Full Power Bandwidth guarantee based on Slaw Rate measurement using FPBW = Slew Rate/(2xVpeax)- 3. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.). TABLE 4. ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS SUBGROUPS (SEE TABLES 1 AND 2) Interim Electrical Parameters (Pre Burn-In) 1 Final Electrical Test Parameters 1 (Note 1), 2, 3, 4, 5, 6 Group A Test Requirements 1,2,3,4, 5,6 Groups C and D Endpoints 1 NOTE: 1. PDA applies to Subgroup 1 only. Spec Number 511014-883 3-117HAS5104/883 Die Characteristics DIE OIMENSIONS: 95 x 99x 19 mils + 1 mils 2420 x 2530 x 483um + 25.44m METALLIZATION: Type: Al, 1% Cu Thickness: 16kA + 2kA GLASSIVATION: Type: Nitride (SiI3N4) over Silox (SIO2, 5% Phos.) Silox Thickness: 12kA + 2k. Nitride Thickness: 3.5kA + 1.5kA WORST CASE CURRENT DENSITY: 1.43 x 10 A/cm? ;SUBSTRATE POTENTIAL (Powered Up): Unbiased TRANSISTOR COUNT: 175 PROCESS: Bipolar Dielectric Isolation Metallization Mask Layout HA5104/883 +IN2 V+ Ni -AN2 ANi OUT2 oumT1 OUTS OUT4 | Pri an AN3 1N4 +IN3 v- +1NG Spec Number 511014-883 3-118