10/12/12
IRLML6246TRPbF
HEXFET® Power MOSFET
www.irf.com 1
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes through are on page 10
Application(s)
Micro3TM (SOT-23)
IRLML6246TRPbF
D
S
G
3
1
2
• Load/ System Switch
Features and Benefits
Features Benefits
VDS 20 V
VGS Max ± 12 V
RDS(on) max
(@VGS = 4.5V) 46 m
:
RDS(on) max
(@VGS = 2.5V) 66 m
:
Absolute Maximum Ratings
Symbol
Parameter
Units
VDS Drain-Source Voltage V
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TA = 25°C Maximum Power Dissipation
PD @TA = 70°C Maximum Power Dissipation
Linear Derating Factor W/°C
VGS Gate-to-Source Voltage V
TJ, TSTG Junction and Storage Temperature Range °C
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
R
θ
JA Junction-to-Ambient
e
––– 100
R
θ
JA Junction-to-Ambient (t<10s)
f
––– 99
W
°C/W
A
Max.
4.1
3.3
-55 to + 150
± 12
0.01
20
1.3
0.8
16
Industry-standard SOT-23 Package Multi-vendor compatibility
RoHS compliant containing no lead, no bromide and no halogen results in Environmentally friendly
PD - 97529A
IRLML6246TRPbF
2www.irf.com
D
S
G
Electric Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 20 ––– ––– V
Δ
V
(BR)DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient ––– 0.03 ––– V/°C
––– 30 46
––– 45 66
V
GS(th)
Gate Threshold Voltage 0.5 0.8 1.1 V
I
DSS
––– ––– 1.0
––– ––– 10
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
R
G
Internal Gate Resistance ––– 4.0 ––– Ω
gfs Forward Transconductance 10 ––– ––– S
Q
g
Total Gate Charge ––– 3.5 –––
Q
gs
Gate-to-Source Charge ––– 0.26 –––
Q
gd
Gate-to-Drain ("Miller") Charge ––– 1.7 –––
t
d(on)
Turn-On Delay Time ––– 3.6 –––
t
r
Rise Time ––– 4.9 –––
t
d(off)
Turn-Off Delay Time ––– 11 –––
t
f
Fall Time ––– 6.0 –––
C
iss
Input Capacitance ––– 290 –––
C
oss
Output Capacitance ––– 64 –––
C
rs s
Reverse Transfer Capacitance ––– 41 –––
Source - Drain Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
c
V
SD
Diode Forward Voltage ––– ––– 1.2 V
t
rr
Reverse Recovery Time ––– 8.6 13 ns
Q
rr
Reverse Recovery Charge ––– 2.8 4.2 nC
I
D
= 1.0A
T
J
= 25°C, V
R
= 15V, I
F
=1.3A
V
DS
= 16V, V
GS
= 0V, T
J
= 55°C
V
DS
= 16V
ƒ = 1.0MHz
R
G
= 6.8Ω
V
GS
= 4.5V
d
di/dt = 100A/μs
d
V
GS
= 12V
V
GS
= -12V
T
J
= 25°C, I
S
= 4.1A, V
GS
= 0V
d
integral reverse
p-n junction diode.
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 4.5V, I
D
= 4.1A
d
MOSFET symbol
showing the
V
DS
=10V
Conditions
V
GS
= 4.5V
V
GS
= 0V
R
DS(on)
V
GS
= 2.5V, I
D
= 3.3A
d
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current μA
mΩ
V
DD
=10V
d
nA
nC
ns
V
DS
= V
GS
, I
D
= 5μA
V
DS
=16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
V
DS
= 10V, I
D
= 4.1A
I
D
= 4.1A
––– –––
––– –––
pF
A
1.3
16
IRLML6246TRPbF
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Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
ID, Drain-to-Source Current (A)
≤60μs PULSE WIDTH
Tj = 25°C
1.5V
VGS
TOP 10V
4.5V
3.0V
2.5V
2.3V
2.0V
1.8V
BOTTOM 1.5V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
≤60μs PULSE WIDTH
Tj = 150°C
1.5V
VGS
TOP 10V
4.5V
3.0V
2.5V
2.3V
2.0V
1.8V
BOTTOM 1.5V
1.0 1.5 2.0 2.5 3.0 3.5
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
TJ = 25°C
TJ = 150°C
VDS = 15V
≤60μs PULSE WIDTH
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 4.1A
VGS = 4.5V
IRLML6246TRPbF
4www.irf.com
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
110 100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
0.0
0
1
10
100
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 150°C
VGS = 0V
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
ID, Drain-to-Source Current (A)
TA = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS(on)
100μsec
0.0 2.0 4.0 6.0 8.0
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VGS, Gate-to-Source Voltage (V)
VDS= 16V
VDS= 10V
VDS= 4.0V
ID= 4.1A
IRLML6246TRPbF
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Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
VGS
+
-
VDD
25 50 75 100 125 150
TA , Ambient Temperature (°C)
0.0
1.0
2.0
3.0
4.0
5.0
ID , Drain Current (A)
1E-006 1E-005 0.0001 0.001 0.01 0.1 110
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
1
10
100
1000
Thermal Response ( Z thJA )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
IRLML6246TRPbF
6www.irf.com
Fig 13. Typical On-Resistance Vs. Drain
Current
Fig 12. Typical On-Resistance Vs. Gate
Voltage
Fig 14b. Gate Charge Test Circuit
Fig 14a. Basic Gate Charge Waveform
1K
VCC
DUT
0
L
S
20K
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2QgdQgodr
0 5 10 15 20 25 30
ID, Drain Current (A)
20
40
60
80
100
120
RDS(on), Drain-to -Source On Resistance (mΩ)
Vgs = 10V
Vgs = 4.5V
0 1 2 3 4 5 6 7 8 9 10 11 12
VGS, Gate -to -Source Voltage (V)
20
40
60
80
RDS(on)
, Drain-to -Source On Resistance (m
Ω)
ID = 4.1A
TJ = 25°C
TJ = 125°C
IRLML6246TRPbF
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Fig 15. Typical Threshold Voltage Vs.
Junction Temperature
Fig 16. Typical Power Vs. Time
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
0.0
0.5
1.0
1.5
VGS(th), Gate threshold Voltage (V)
ID = 10uA
ID = 250uA
1E-005 0.0001 0.001 0.01 0.1 110
Time (sec)
0
20
40
60
80
100
Power (W)
IRLML6246TRPbF
8www.irf.com
Micro3™(SOT-23) Part Marking Information
Micro3™(SOT-23) Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
e
E1
E
D
A
B
0.15 [0.006]
e1
12
3
MCBA
5
6
6
5
NOTES:
b
A1 3X
A
A2
ABC
M0.20 [0.008]
0.10 [0.004] C
C
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: MILLIMETER.
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES
NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS
OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.
7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
0.89 1.12
SYMBOL MAXMIN
A1
b
0.01 0.10
c
0.30 0.50
D
0.08 0.20
E
2.80 3.04
E1
2.10 2.64
e
1.20 1.40
A
0.95 BSC
L0.40 0.60
08
MILLIMETERS
A2 0.88 1.02
e1 1.90 BSC
REF0.54L1
BSC0.25
L2
BSC
REF
%6&
INCHES
80
%6&
0.0004
MIN MAX
DIMENSIONS
0.972
1.900
Recommended Footprint
0.802
0.950 2.742
3X L
c
L2
H 4 L1
7
F = IRLML6401
A2001 A27
LOT CODE
LEAD FREE
DAT E CODE
E = IRLML6402
X = PART NUMBER CODE REFERENCE:
D = IR LML5103
C = IRLML6302
B = IRLML2803
A = IRLML 2402
W = (1-26) IF PRECE DED BY LAST DIGIT OF CAL ENDAR YEAR
W = (27-52) IF PRECEDED BY A LET T E R
Y
82008
32003
12001
YEAR
2002 2
52005
2004 4
2007
2006
7
6
2010 0
2009 9
YEAR Y
C03
WOR K
WE E K
01
02
A
W
B
04 D
24
26
25
X
Z
Y
WOR K
WE E K W
H = IRLML5203
G = IRLML2502
K
H
G
F
E
D
C
B
2006
2003
2002
2005
2004
2008
2007
2010
2009 J
Y51
29
28
30
C
B
D
50 X
52 Z
Note: A li ne above the work week
(as shown here) indicates Lead - Free.
S = IRLML6244
T = IRL ML6246
U= IRLML6344
V = IRLML6346
I = IRLML0030
J = IRLML2030
L = IRLML0060
M = IRLML0040
K = IRLML0100
N = IRLML 2060
P = IRLML9301
R = IRLML9303
Cu WIR E
HALOGEN FREE
PART NUMBER
IRLML6246TRPbF
www.irf.com 9
Micro3™(SOT-23) Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
TR
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
1.6 ( .062 )
1.5 ( .060 ) 1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
1.1 ( .043 )
0.9 ( .036 )
4.1 ( .161 )
3.9 ( .154 ) 0.35 ( .013 )
0.25 ( .010 )
8.3 ( .326 )
7.9 ( .312 )
1.32 ( .051 )
1.12 ( .045 )
9.90 ( .390 )
8.40 ( .331 )
178.00
( 7.008 )
MAX.
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
IRLML6246TRPbF
10 www.irf.com
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101N. Sepulveda blvd, El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/2012
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Surface mounted on 1 in square Cu board
Refer to application note #AN-994.
MSL1
(per IPC/JEDEC J-STD-020D††† )
RoHS compliant Yes
Micro3™(SOT-23)
Qualification information†
Moisture Sensitivity Level
Qualification level
Consumer††
(per JEDEC JESD47F ††† guidelines )
Note
Form Quantity
IRLML6246TRPbF
Micro 3
™
(SOT-23)
Tape and Reel 3000
Orderable part number Package Type Standard Pack
Date Comments
10/12/2012 Added IDSS @ 16V, T
J
= 55C-pg2
Revision History
