MBR1635, MBR1645, MBR1660 www.vishay.com Vishay General Semiconductor Schottky Barrier Rectifier FEATURES TO-220AC * Power pack * Guardring for overvoltage protection * Low power loss, high efficiency * Low forward voltage drop * High forward surge capability * High frequency operation 2 * Solder bath temperature 275 C maximum, 10 s, per JESD 22-B106 1 MBR16xx * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PIN 1 PIN 2 CASE TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, and polarity protection application. PRIMARY CHARACTERISTICS MECHANICAL DATA IF(AV) 16 A VRRM 35 V to 60 V IFSM 150 A VF 0.57 V, 0.65 V TJ max. 150 C Package TO-220AC Diode variations Single Case: TO-220AC Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: as marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TC = 25 C unless otherwise noted) SYMBOL MBR1635 MBR1645 MBR1660 Maximum repetitive peak reverse voltage VRRM 35 45 60 Working peak reverse voltage VRWM 35 45 60 Maximum DC blocking voltage VDC 35 45 60 Maximum average forward rectified current at TC = 125 C IF(AV) 16 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 150 PARAMETER Peak repetitive reverse current at tp = 2.0 s, 1 kHz IRRM Voltage rate of change (rated VR) dV/dt 10 000 TJ -65 to +150 TSTG -65 to +175 Operating junction temperature range Storage temperature range 1.0 UNIT V A 0.5 V/s C Revision: 16-Nov-17 Document Number: 87590 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR1635, MBR1645, MBR1660 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) PARAMETER SYMBOL Maximum instantaneous forward voltage VF (1) Maximum instantaneous reverse current at DC blocking voltage IR (1) TEST CONDITIONS MBR1635 MBR1645 MBR1660 IF = 16 A TC = 25 C 0.63 0.75 IF = 16 A TC = 125 C 0.57 0.65 TC = 25 C 0.2 1.0 TC = 125 C 40 50 Rated VR UNIT V mA Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: pulse width 40 ms THERMAL CHARACTERISTICS (TC = 25 C unless otherwise noted) PARAMETER Typical thermal resistance from junction to case SYMBOL MBR UNIT RJC 1.5 C/W ORDERING INFORMATION (Example) PACKAGE TO-220AC PREFERRED P/N MBR1645-E3/45 UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 1.80 45 50/tube Tube Revision: 16-Nov-17 Document Number: 87590 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR1635, MBR1645, MBR1660 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TC = 25 C unless otherwise noted) 100 Instantaneous Reverse Current (mA) 20 Average Forward Current (A) Resistive or Inductive Load 16 12 8 4 0 TJ = 125 C 10 1 TJ = 75 C 0.1 TJ = 25 C 0.01 0.001 50 0 100 0 150 40 20 80 60 Case Temperature (C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics TJ = TJ Max. 8.3 ms Single Half Sine-Wave Junction Capacitance (pF) 125 100 75 50 25 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p 1000 MBR1635, MBR1645 MBR1660 100 0 1 10 100 1 0.1 100 10 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 5 - Typical Junction Capacitance 100 100 Transient Thermal Impedance (C/W) Instantaneous Forward Current (A) 100 10 000 150 Peak Forward Surge Current (A) MBR1635, MBR1645 MBR1660 TJ = 150 C 10 Pulse Width = 300 s 1 % Duty Cycle 1 TJ = 25 C 0.1 MBR1635, MBR1645 MBR1660 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 10 1 0.1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Revision: 16-Nov-17 Document Number: 87590 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR1635, MBR1645, MBR1660 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AC 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) DIA. 0.148 (3.74) DIA. 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) 1 PIN 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 2 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) PIN 1 PIN 2 0.105 (2.67) 0.095 (2.41) 0.603 (15.32) 0.573 (14.55) 0.037 (0.94) 0.027 (0.68) 0.205 (5.20) 0.195 (4.95) CASE 0.022 (0.56) 0.014 (0.36) Revision: 16-Nov-17 Document Number: 87590 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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