Single Diode Schottky Barrier Diode M42 OUTLINE DIen i 5A Package : G1F Unit!mm Weight 0.0llg(Typ) 150V 1.4A 35 D 2 #2/)\@SMD Ultra-small SMD [ [N71] Dot 762! =0.8mm Ultra-thin PKG=0.8mm / e (ElA= 50 uA Low In=50pA ayPee f(t cry C1) oR SiC LICCL\ Resistance for thermal run-away Cathode mark Type No. Date code 0A vF VIR Switching Regulator 4 @ ,) eDC/DCIVI\F DC/DC Converter = RB. F/,. OAK Home Appliance, Game, Office Automation ems Communication SHEEN Ov CERI Web 4 bts CRMURBLIL ze) & COBH Favs, lOve RAILS CB F So, For details of the outline dimensions, refer to our web site or Semiconductor Short Form Catalog. As for the marking, refer to the specification "Marking, Terminal Connection". MewX RATINGS @xtRAZH Absolute Maximum Ratings (hee TI=25) H we | A ff ih Bie Item Symboll Conditions Type No. DGIN15A Unit Cet F i BE = % Storage Temperature Tstg 55~ 150 Cc TE HUE : Operation Junction Temperature Tj 150 Cc +f A SLE ? Maximum Reverse Voltage Va 150 V agai si . Ta=430 4 HJ aia I 50Hz IRR, BEL AT . 0.7 A Average Rectified Forward Current o SOHz sine wave, Resistance load Ta=65C * 14 f ao =, ab A A ME fis 50Hz Ra, JERK LIGA 2 ab Af, T] = 25 30 A Peak Surge Forward Current FSM | 50Hz sine wave, Non-repetitive 1 cycle peak value, T/=25C 5 OB ah) - MHS Electrical Characteristics GHzOeV HA TI=25T) ee Ve | Ir=14A, pyre MAX 0.88 V Forward Voltage Pulse measurement ser att 7 U Ub AE Reverse Current Ik Vr=VrM. pitse measurement MAX 50 nA Te tet * 3 ps r function Capacitance Cj =1MHz, Vr=10V TYP 32 pF "1 MAX 210 : 40: fy fb - AHN) . Bo Aja | Sunction to ambient 2 MAX 120 cw | | f Thermal Resistance 5 Max 70 ; Heer ib FAR = Oil | Sunetion to lead 3 MAX 20 "L Wee y baa Oe 826mm) - Measured on 1 x 1 inch substrate (pattern area : 32.6mm) l4 hE S) & ba OA + 160mm) Measured on 1 x 1 inch substrate (pattern area : 160mm) "3 24 YFP AFH (78 9 + 2,100mm) Measured on 2 x 2 inch alumina substrate (pattern area : 2,100mm*) bo 82 eee) www.shindengen.co.jp/product/semil Small SMD Single SBD DG1N15A Mist CHARACTERISTIC DIAGRAMS NETS Tl ete Forward Voltage =15'C(MAX) sq T= 150C(TYP) 24 Ths: 25C(MAX) 77 Ti= 2YC(TYP) Forward Current Ir (A) [Pulse measurement] Forward Voltage Vr [V) NFR 748 thee Forward Power Dissipation Forward Power Dissipation Pr [W) Average Rectified Forward Current Io (A) PARTON iii Peak Surge Forward Current Capability Sine wave = Oms lms: ~Teyele [eoneeoet "| Tj=25C Peak Surge Forward Current Irsm CA) Number of Cycles [eycle) AMIE Reverse Current BHAA Reverse Power Dissipation F EeAaE Junction Capacitance = f=1MHz S T= 25C I Tp ata Ce TE Bg yas = _ et D=tp/T a a @ j= le = amr S ni =f uo = 2 d & =| 2 & 2 c q : p 5 3 . = 3 : 5 2 a Z 2 z > 4 Pulse measurement] ! in Reverse Voltage Vr (V) Reverse Voltage Ve (V) Reverse Voltage Ve (V) F4lF4+vINT Ta-lo F4LF41YINT Ta-lo Derating Curve Ta-lo Derating Curve Ta-lo S bot < jgoestke 2 aD=08 2 i TVR < 2 te | bi ~| D=tpi E E - a POX Oo oO Hiss CPO) : Ca eH g g 3 S oe oe e 5 = <= = Ambient Temperature Ta (C) Ambient Temperature Ta (C) elf ITY y bE SS + 32.6mm) #24 4FT) vy b MAR (8 Y +2.100mm) Measured on 1 x 1 inch substrate Measured on 2 x 2 inch substrate (pattern area 32.6mm) (pattern area 2,100mm) * Sine wave (i50Hz THE LT ET. * SOHz sine wave is used for measurements. * POOP HLS YP eho TBD ET. Typical SHANE SRL ET, * Semiconductor products generally have characteristic variation. Typical is a statistical average of the device's ability. (J532-1) 83 www.shindengen.co.jp/product/semi/