2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–59 March 11, 2000-21
FEATURES
• Very High Current Transfer Ratio, 500% Min.
• High Isolation Resistance, 10
11
Ω
Typical
• Standard Plastic DIP Package
• Underwriters Lab File #E52744
• VDE Approvals #0884 (Available with
Option 1)
DESCRIPTION
The 4N32 and 4N33 are optically coupled isolators
with a Gallium Arsenide infrared LED and a silicon
photodarlington sensor. Switching can be achieved
while maintaining a high degree of isolation between
driving and load circuits. These optocouplers can be
used to replace reed and mercury relays with advan-
tages of long life, high speed switching and elimina-
tion of magnetic fields.
Maximum Ratings
Emitter
Peak Reverse Voltage ........................................3.0 V
Continuous Forward Current ............................60 mA
Power Dissipation at 25
°
C.............................100 mW
Derate Linearly from 55
°
C .......................1.33 mW/
°
C
Detector
Collector-Emitter Breakdown Voltage, BV
CEO
.....30 V
Emitter-Base Breakdown Voltage, BV
EBO
......... 8.0 V
Collector-Base Breakdown Voltage,
BV
CBO
..............................................................50 V
Emitter-Collector Breakdown Voltage,
BV
ECO
.............................................................5.0 V
Collector (load) Current..................................125 mA
Power Dissipation at 25
°
C Ambient ..............150 mW
Derate Linearly from 25
°
C .........................2.0 mW/
°
C
Package
Total Dissipation at 25
°
C Ambient ................250 mW
Derate Linearly from 25
°
C .........................3.3 mW/
°
C
Isolation Test Voltage................................. 5300
V
RMS
(between emitter and detector,
Standard Climate: 23
°
C/50%RH,
DIN 50014)
Leakage Path ........................................ 7.0 mm min.
Air Path................................................... 7.0 mm min.
Isolation Resistance
V
IO
=500 V/25
°
C .........................................
≥
10
12
Ω
V
IO
=500 V/100
°
C .......................................
≥
10
11
Ω
Storage Temperature ......................–55
°
C to +150
°
C
Operating Temperature ..................–55
°
C to +100
°
C
Lead Soldering Time at 260
°
C ............................ 10 s
V
DE
Electrical Characteristics
T
A
=25
°
C
*Indicates JEDEC registered values
Parameter Min. Typ. Max. Unit Condition
Emitter
Forward Voltage — 1.25 1.5 V
I
F
=50 mA
Reverse Current 0.1 100
µ
A
V
R
=3.0 V
Capacitance 25 — pF
V
R
=0 V
Detector
BV
CEO
*30——V
I
C
=100
µ
A,
I
F
=0
BV
CBO
*50
BV
EBO
* 8.0
BV
ECO
* 5.0 10
I
E
=100
µ
A,
I
F
=0
I
CEO
— 1.0 100 nA
V
CE
=10 V,
I
F
=0
h
FE
13K — —
I
C
=0.5 mA,
V
CE
=5.0 V
Package
Current Transfer Ratio 500 — — %
I
F
=10 mA,
V
CE
=10 V
V
CEsat
— 1.0 V
I
C
=2.0 mA,
I
F
=8.0 mA
Coupling Capacitance 1.5 pF —
Turn On Time — 5.0
µ
s
V
CC
=10 V,
I
C
=50 mA
Turn Off Time 100
I
F
=200mA,
R
L
=180
Ω
.010 (.25)
typ.
.114 (2.90)
.130 (3.0)
.130 (3.30)
.150 (3.81)
.031 (0.80) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
Min.
.018 (0.45)
.022 (0.55)
.048 (1.22)
.052 (1.32)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
pin one ID
6
5
4
12
3
18°
3°–9°
.300–.347
(7.62–8.81)
4°
typ.
1
2
3
6
5
4
Base
Collector
Emitter
Anode
Cathode
NC
Dimensions in inches (mm)
4N32/4N33
Photodarlington
Optocoupler