DATE NAME
DRAWN
CHECKED
APPROVED
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SPECIFICATION
Device Name :
Type Name :
Spec. No. :
Date :
H04-004-05
FMW21N60G
MS5F5934
MS5F5934
1/19
Power MOSFET
Sep.-27-2004
CHECKED
Sep.-27-'04
Sep.-27-'04
Sep.-27-'04
a
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H04-004-03
MS5F5934
2/19
a
Revised Records
Date Classification
Index
Content Drawn
Checked Checked Approved
enactment
Sep.-27
2004
Aug.-03
2005 Added Added newpackage
types
a
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H04-004-03
MS5F5934
3/19
a
1.Scope This specifies Fuji Power MOSFET FMW21N60G
2.Construction N-Channel enhancement mode power MOSFET
3.Applications for Switching
4.Type name and Ordering code
TypeName
5.Outview and Standard packing Specification
6.Absolute MaximumRatings at Tc=25℃(unless otherwise specified)
Description Symbol Characteristics Unit Remarks
VDS V
VDSX V VGS=-30V
Continuous Drain Current ID± A
Pulsed Drain Current IDP ± A
Gate-SourceVoltage VGS ± V
Repetitive andNon-Repetitive Tch<=150℃
MaximumAvalanche Current
Non-Repetitive L=1.4mH
MaximumAvalanche Energy Vcc=60V *1
MaximumDrain-Source dV/dt dVDS/dt kV/μs VDS<=600V
Peak DiodeRecovery dV/dt dV/dt kV/μs *2
Ta=25
℃
Tc=25℃
Operating and Storage Tch ℃
Temperature range Tstg ℃
*1 See to AvalancheEnergy Graph (Page17/18)
*2 IF
-ID,-di/dt=50A/μs,Vcc
BVDSS,Tch
150℃
MaximumPower Dissipation PD
A
mJ
W
EAS
IAR
20
333.8
335
Ordering code Country code
Ordering code Package
Type
Out view
Drain-Source Voltage
21
Packaging
Assembly location
FMW21N60G FMW21N60G SC (Blank) Japan
FMW21N60G SC-K1 K1 'Factory A' at Korea
FMW21N60G SC TO-247 page 8/19 MS5Q0006
FMW21N60G SC-K1 page 9/19 MS5Q0064
Standardpacking
Specification
84
30
21
600
600
150
-55 to+150
5
2.50
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H04-004-03
MS5F5934
4/19
a
7.Electrical Characteristics at Tc=25
℃
(unless otherwise specified)
Static Ratings
Description Symbol Conditions min. typ. max. Unit
Drain-Source ID=250μA
Breakdown Voltage BVDSS VGS=0V 600 - - V
Gate Threshold ID=250μA
Voltage VGS(th) VDS=VGS 3.0 - 5.0 V
Zero Gate Voltage VDS=600V
VGS=0V Tch=25℃- - 25
Drain Current IDSS VDS=480V
VGS=0V Tch=125℃- - 250
Gate-Source VGS= ± 30V
Leakage Current IGSS VDS=0V - 10 100 nA
Drain-Source ID=8.5A
On-State Resistance RDS(on) VGS=10V - 0.29 0.37 Ω
Forward ID=8.5A
Transconductance gfs VDS=25V 10 20 - S
Input Capacitance Ciss VDS=25V - 2280 3420
Output Capacitance Coss VGS=0V - 290 435
Reverse Transfer f=1MHz 16 24 pF
Capacitance Crss -
td(on) Vcc=300V - 26 39
Turn-On Time tr VGS=10V - 37 56
td(off) ID=8.5A - 78 117 ns
Turn-Off Time tf RG=10Ω- 13 19
Total Gate Charge QGVcc=300V - 54 81
Gate-Source Charge QGS ID=17A - 15 23 nC
Gate-Drain Charge QGD VGS=10V - 20 30
Reverse Diode
Description Symbol Conditions min. typ. max. Unit
Avalanche Capability
1.4m
H
Tch=25
℃
IAV See Fig.1 and Fig.2 21 - - A
Diode Forward IF=17A
On-Voltage VSD VGS=0V Tch=25℃- 0.93 1.50 V
Reverse Recovery IF=17A
Time trr VGS=0V - 0.7 - μs
Reverse Recovery
-di/dt=100A/
μ
s
Charge Qrr Tch=25℃- 10.00 - μC
8.Thermal Resistance
Description Symbol min. typ. max. Unit
Channel to Case Rth(ch-c) 0.373 ℃
/
W
Channel to Ambient Rth(ch-a) 50.0 ℃
/W
μA
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H04-004-03
MS5F5934
5/19
a
Fig.1 Test circuit
Fig.2 Operating waveforms
50ΩD.U.T
L
Vcc
-15V
0
BVDSS
IDP
VGS
ID
VDS
+10V
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H04-004-03
MS5F5934
6/19
a
9.Reliability test items
All guaranteed values are under the categories of reliabilityper non-assembled(only MOSFETs).
Each categories under the guaranteed reliabilityconform toEIAJ ED4701/100 method104
standards.
Test items required without fail
Humidification treatment (85±2°C,65±5%RH,168±24hr)
Heat treatment of soldering (Solder Dipping,260±5°C(265°Cmax.),10±1sec,2 times)
Test Test Testingmethods and Conditions Reference Sampling Acceptance
No. Items Standard number number
1 Terminal Pull force
Strength TO-220,TO-220F: 10N EIAJ
(Tensile) TO-3P,TO-3PF,TO-247 : 25N ED4701/400 15
TO-3PL :45N method 401
T-Pack,K-Pack : 10N
Forcemaintainingduration:30±5sec
2 Terminal Loadforce
Strength TO-220,TO-220F: 5N EIAJ
(Bending) TO-3P,TO-3PF,TO-247 : 10N ED4701/400 15
TO-3PL :15N method 401
T-Pack,K-Pack : 5N
Number of times :2times(90deg./time)
3 Mounting Screwingtorque value: (M3) EIAJ (0:1)
Strength TO-220,TO-220F: 40±10N・cm ED4701/400 15
TO-3P,TO-3PF,TO-247 : 50±10N・cm method 402
TO-3PL :70±10N・cm
4 Vibration frequency : 100Hz to 2kHz EIAJ
Acceleration : 200m/s
2
ED4701/400 15
Sweeping time : 4min. method 403
48min. for each X,Y&Z directions.
5 Shock Peak amplitude: 15km/s
2
EIAJ
Duration time : 0.5ms ED4701/400 15
3times for each X,Y&Z directions. method 404
6 Solderability Solder temp. : 245±5°C
Immersion time : 5±0.5sec
Each terminal shall beimmersedin ----- 15
the solder bath within 1 to 1.5mm from
the body.
7 Resistanceto Solder temp. : 260±5°C EIAJ
Soldering Heat Immersion time : 10±1sec ED4701/300 15
Number of times : 1times method 302
Mechanical test methodsMechanical test methods
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H04-004-03
MS5F5934
7/19
a
Failure Criteria Symbols Unit
Lower Limit Upper Limit
Breakdown Voltage BVDSS LSL ----- V
Zero gate Voltage Drain-Source Current IDSS ----- USL A
Gate-Source Leakage Current IGSS ----- USL A
Gate Threshold Voltage VGS(th) LSL USL V
Drain-Source on-state Resistance RDS(on) ----- USL Ω
Forward Transconductance gfs LSL ----- S
Diode forward on-Voltage VSD ----- USL V
Marking
Soldering ----- With eyes or Microscope -----
and other damages
* LSL : Lower Specification Limit * USL : Upper Specification Limit
* Before any of electrical characteristics measure, all testing related to the humidity
have conducted after drying the package surface for more than an hour at 150°C.
Item Failure Criteria
Electrical
Characteristics
Outview
Test Test Testing methods and Conditions Reference Sampling Acceptance
No. Items Standard number number
1 HighTemp. Temperature: 150+0/-5°C EIAJ 22
Storage Test duration: 1000hr ED4701/200
method 201
2 LowTemp. Temperature : -55+5/-0°C EIAJ 22
Storage Test duration: 1000hr ED4701/200
method 202
3 Temperature Temperature : 85±2°C EIAJ
Humidity Relative humidity : 85±5% ED4701/100 22
Storage Test duration: 1000hr method 103
4 Temperature Temperature : 85±2°C EIAJ
Humidity Relative humidity : 85±5% ED4701/100 22
BIAS Bias Voltage: 500V method 103
Test duration: 1000hr
5 Unsaturated Temperature : 130±2°C EIAJ (0:1)
Pressurized Relative humidity : 85±5% ED4701/100 22
Vapor Vapor pressure: 230kPa method 103
Test duration: 48hr
6 Temperature High temp.side : 150±5°C/30min. EIAJ
Cycle Lowtemp.side : -55±5°C/30min. ED4701/100 22
RT : 5°C 〜35°C/5min. method 105
Number of cycles : 100cycles
7 Thermal Shock Fluid : purewater(running water)
High temp.side : 100+0/-5°C EIAJ 22
Low temp.side : 0+5/-0°C ED4701/300
Duration time : HT 5min,LT 5min method 307
Number of cycles : 100cycles
8 Intermittent ΔTc=90degree EIAJ
Operating
Tch
≦
Tch(max.)
ED4701/100 22
Life Test duration : 3000 cycle method 106
9 HTRB Temperature : Tch=150+0/-5°C EIAJ
(Gate-source) Bias Voltage : +VGS(max) ED4701/100 22 (0:1)
Test duration: 1000hr method 101
10 HTRB Temperature : Tch=150+0/-5°C EIAJ
(Drain-Source) Bias Voltage : 500V ED4701/100 22
Test duration: 1000hr method 101
Climatic test methods
Endurance test methods
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H04-004-03
MS5F5934
8/19
a
Note : 1.Marking Infomation
Type Name : 21N60G
Lot No. : YMNNN
Y: Year Code
M : Month Code
NNN : Lot SerialNumber
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H04-004-03
MS5F5934
9/19
a
Note : 2.Marking Infomation
Type Name : 21N60G
Lot No. : YMNNN
Y: Year Code
M : Month Code
NNN : Lot SerialNumber
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H04-004-03
MS5F5934
10/19
a
10.Cautions
･AlthoughFujiElectriciscontinuallyimprovingproductqualityandreliability,asmallpercentageof
semiconductor productsmaybecomefaulty.WhenusingFuji Electric semiconductorproducts inyour
equipment, youarerequested totakeadequatesafetymeasures topreventtheequipmentfromcausing
physical injury,fire, orother problem incaseanyof the products fail.Itisrecommendedtomake your
designfail-safe,flameretardant, andfreeofmalfunction.
･TheproductsdescribedinthisSpecificationareintendedforuseinthefollowingelectronicand electrical
equipmentwhichhasnormalreliabilityrequirements.
･Computers ･OAequipment ･Communicationsequipment(Terminaldevices)
･Machinetools ･AVequipment ･Measurementequipment
･Personalequipment ･Industrialrobots ･Electricalhomeappliances etc.
･TheproductsdescribedinthisSpecificationarenotdesigned ormanufactured tobeusedinequipmentor
systems usedunderlife-threatening situations.Ifyouarecons
ideringusing theseproductsin the equipment
listedbelow,firstcheck thesystem constructionandrequiredreliability,and takeadequatesafetymeasures
suchasabackup system toprevent the equipmentfrom malfunctioning.
･Backbonenetworkequipment ･Transportationequipment(automobiles,trains,ships,etc.)
･Traffic-signalcontrolequipment ･Gasalarms,leakagegasautobreakers
･Submarinerepeaterequipment ･Burglar alarms,firealarms,emergencyequipment
･Medicalequipment ･Nuclearcontrolequipment etc.
･Do not usetheproducts inthisSpecificationfor equipment requiringstrict reliability such as(butnotlimited
to):
･Aerospaceequipment ･Aeronauticalequipment
11.Warnings
･TheMOSFETs shouldbeusedin productswithintheirabsolute maximum rating(voltage, current,
temperature, etc.).
･TheMOSFETsmaybedestroyedifusedbeyondtherating.
･Weonlyguaranteethenon-repetitiveand repetitive Avalanchecapabilityand not for thecontinuous
Avalanchecapabilitywhichcanbeassumedas abnormal condition.Please notethedevicemaybe
destructedfrom theAvalancheoverthespecifiedmaximum rating.
･TheequipmentcontainingMOSFETsshould haveadequatefusesor circuitbreakers to preventthe
equipmentfrom causingsecondarydestruction(ex. fire, explosionetc…).
･Usethe MOSFETswithintheir reliabilityand lifetimeundercertain environments orconditions.The
MOSFETsmayfail beforethetarget lifetimeofyour products if usedundercertain reliabilityconditions.
･Becarefulwhen handlingMOSFETs forESD damage. (Itisanimportant consideration.)
･ When handling MOSFETs, hold them by the case (package) and don’t touch the leads and terminals.
･Itisrecommended thatanyhandlingofMOSFETsisdoneongroundedelectricallyconductivefloorand
tablemats.
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H04-004-03
MS5F5934
11/19
a
･Before touching a MOSFET terminal, Discharge any static electricity from your body and clothes
by grounding out through a high impedance resistor (about 1M)
･When soldering, in order to protect the MOSFETs from static electricity, ground the soldering iron
or soldering bath through a low impedance resistor.
･You must design the MOSFETs to be operated within the specified maximum ratings(voltage,
current, temperature, etc.) to prevent possible failure or destruction of devices.
･Consider the possible temperature rise not only for the channel and case, but also for the outer
leads.
･Do not directly touch the leads or package of the MOSFETs while power is supplied or during
operation in order to avoid electric shock and burns.
･The MOSFETs are made of incombustible material. However, if a MOSFET fails, it may emit
smoke or flame. Also, operating the MOSFETs near any flammable place or material may cause
the MOSFETs to emit smoke or flame in case the MOSFETs become even hotter during
operation. Design the arrangement to prevent the spread of fire.
･The MOSFETs should not used in an environment in the presence of acid, organic matter, or
corrosive gas(hydrogen sulfide, sulfurous acid gas etc.)
･The MOSFETs should not used in an irradiated environment since they are not radiation-proof.
Installation
･Soldering involves temperatures which exceed the device storage temperature rating. To avoid
device damage and to ensure reliability, observe the following guidelines from the quality
assurance standard.
Solder temperature and duration (through-hole package)
Solder temperature Duration
2605C 101 seconds
35010 C 3.50.5 seconds
･The immersion depth of the lead should basically be up to the lead stopper and the distance should
be a maximum of 1.5mm from the device.
･When flow-soldering, be careful to avoid immersing the package in the solder bath.
Recommendedsolderingcondition
Methods
Categories Packages Wave
Soldering
(Full dipping)
Wave
Soldering
(Onlyterminal)
Infrared
Reflow Air
Reflow Soldering
iron
(Re-work)
TO-3PL × ◎ × × ○
TO-3P × ◎ × × ○
TO-247 × ◎ × × ○
TO-3PF × ◎ × × ○
TO-220 × ◎ × × ○
TO-220F × ◎ × × ○
T-Pack(L) × ◎ × × ○
Through-Hole
TO-3PL-7 × ◎ × × ○
◎：Possible ○：Limitedto1time ×：Unable
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H04-004-03
MS5F5934
12/19
a
･Refer tothefollowingtorque referencewhenmounting the device ona heatsink.Excess torque
applied tothe mounting screw causes damageto thedeviceandweaktorque willincrease the
thermalresistance, both of whichconditions maydestroythedevice.
Table1:Recommendedtighteningtorques.
Packagestyle Screw Tighteningtorques Note
TO-220
TO-220F M3 30–50Ncm
TO-3P
TO-3PF
TO-247 M3 40–60Ncm
TO-3PL M3 60 –80 Ncm
flatness :< =±30m
roughness :<=10m
Plane offtheedges:
C<=1.0mm
･The heat sink should have a flatness within±30μm and roughness within 10μm. Also, keep the tightening
torque withinthe limitsofthisspecification.
･Improperhandlingmaycauseisolation breakdownleadingtoacriticalaccident.
ex.) Overplane offthe edgesofscrewhole. (Recommended planeofftheedge isC<1.0mm)
･Werecommend theuseofthermalcompound to optimizetheefficiencyofheat radiation.Itis important to
evenly applythecompound and toeliminateanyairvoids.
Storage
･The MOSFETs must bestored at astandard temperatureof5to35℃andrelative humidityof 45 to 75%.
･If thestorage areais very dry,ahumidifier mayberequired. Insucha case, use onlydeionizedwater or
boiledwater,sincethechlorine intapwatermay corrodetheleads.
･The MOSFETs shouldnot besubjectedto rapidchangesintemperatureto avoidcondensationon the
surfaceofthe MOSFETs.Thereforestorethe MOSFETsin aplacewherethe temperature issteady.
･The MOSFETs shouldnot bestoredon topofeachother, sincethis may causeexcessiveexternalforceon
thecase.
･The MOSFETs shouldbestoredwiththe leadterminals remaining unprocessed. Rustmaycause
presolderedconnections to fail duringlater processing.
･The MOSFETs shouldbestoredin antistatic containersorshipping bags.
12.Appendix
･This products does not contain PBBs (PolybrominatedBiphenyl) orPBDEs(PolybrominatedDiphenyl
Ether ),substances.
･This products doesnot contain Class-I ODS andClass-II ODSsubstancesset forceby ‘Clean Air Act of US’
law.
･If youhaveanyquestionsabout anypartofthisSpecification, pleasecontactFuji
Electric or its sales agentbeforeusingtheproduct.
･NeitherFujinor itsagentsshall beheld liableforany injury caused by usingtheproducts
notin accordancewiththeinstructions.
･The applicationexamples described inthisspecification are merelytypical usesofFuji
Electric products.
･Thisspecificationdoesnotconferany industrialproperty rightsor otherrights,nor
constitute alicense for suchrights.
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H04-004-03
MS5F5934
13/19
a
0 2 4 6 8 10 12 14 16 18 20
0
5
10
15
20
25
30
35
40
45 20V
7.0V
10V
8V
6.5V
6.0V
ID [A]
VDS [V]
Typical Output Characteristics
ID=f(VDS):80 s pulse test,Tch=25C
VGS=5.5V
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
400
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [C]
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H04-004-03
MS5F5934
14/19
a
012345678910
0.1
1
10
100
ID[A]
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C
0.1 1 10 100
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconductance
gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C
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H04-004-03
MS5F5934
15/19
a
0 5 10 15 20 25 30 35 40 45
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
7.0V
6.5V
RDS(on) [ ]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 s pulse test,Tch=25C
10V
20V
8V
6.0V
VGS=
5.5V
-50 -25 0 25 50 75 100 125 150
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
RDS(on) [ ]
Tch [C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=8.5A,VGS=10V
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H04-004-03
MS5F5934
16/19
a
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250 A
VGS(th) [V]
Tch [C]
0 20 40 60 80 100 120
0
2
4
6
8
10
12
14
16
18
20
22
24
Vcc= 120V Vcc= 480V
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=17A,Tch=25C
VGS [V]
Vcc= 300V
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H04-004-03
MS5F5934
17/19
a
10-1 100101102103
10-3
10-2
10-1
100
101
C [nF]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
0.1
1
10
100
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 s pulse test,Tch=25C
DWG.NO.
This m ater ial and the info rmat ion her ein is t he prope rty of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent , or disclose d in a ny way whatsoever for the use of any
thir d party nor used for t he manu facturi ng purpo ses wit hout
the express written consent of Fuji Electric Co.,Ltd.
H04-004-03
MS5F5934
18/19
a
10-1 100101102
100
101
102
103
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10
td(on)
tr tf
td(off)
t [ns]
ID [A]
0 25 50 75 100 125 150
0
200
400
600
800
1000
IAS=9A
IAS=21A
IAS=13A
EAS [mJ]
starting Tch [C]
Maximum Avalanche Energy vs. starting Tch
EAS=f(starting Tch):Vcc=60V
DWG.NO.
This m ater ial and the info rmat ion her ein is t he prope rty of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent , or disclose d in a ny way whatsoever for the use of any
thir d party nor used for t he manu facturi ng purpo ses wit hout
the express written consent of Fuji Electric Co.,Ltd.
H04-004-03
MS5F5934
19/19
a
10-8 10-7 10-6 10-5 10-4 10-3 10-2
10-2
10-1
100
101
102
Single Pulse
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25C,Vcc=60V
Avalanche Current I AV [A]
tAV [sec]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zth(ch-c) [℃/W]
t [sec]