Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUT11APX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1000 V
VCBO Collector-Base voltage (open emitter) - 1000 V
VCEO Collector-emitter voltage (open base) - 450 V
ICCollector current (DC) - 5 A
ICM Collector current peak value - 10 A
Ptot Total power dissipation Ths ≤ 25 ˚C - 32 W
VCEsat Collector-emitter saturation voltage - 1.5 V
ICsat Collector saturation current 3.5 - A
tfFall time ICsat=2.5A,IB1=0.5A,IB2=0.8A 145 160 ns
PINNING - SOT186A PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCESM Collector to emitter voltage VBE = 0 V - 1000 V
VCEO Collector to emitter voltage (open base) - 450 V
VCBO Collector to base voltage (open emitter) - 1000 V
ICCollector current (DC) - 5 A
ICM Collector current peak value - 10 A
IBBase current (DC) - 2 A
IBM Base current peak value - 4 A
Ptot Total power dissipation Ths ≤ 25 ˚C - 32 W
Tstg Storage temperature -65 150 ˚C
TjJunction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Rth j-hs Junction to heatsink with heatsink compound - 3.95 K/W
Rth j-a Junction to ambient in free air 55 - K/W
123
case
b
c
e
September 1998 1 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUT11APX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Visol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Cisol Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICES Collector cut-off current 1VBE = 0 V; VCE = VCESMmax - - 1.0 mA
ICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mA
Tj = 125 ˚C
IEBO Emitter cut-off current VEB = 9 V; IC = 0 A - - 10 mA
VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 450 - - V
L = 25 mH
VCEsat Collector-emitter saturation voltages IC = 3.0 A; IB = 0.6 A - 0.25 1.5 V
VBEsat Base-emitter saturation voltage IC = 2.5 A; IB = 0.33 A - - 1.3 V
hFE DC current gain IC = 5 mA; VCE = 5 V 10 22 35
hFE IC = 500 mA; VCE = 5 V 14 25 35
hFEsat IC = 2.5 A; VCE = 5 V 10 13.5 17
hFEsat IC = 3.5 A; VCE = 5 V 8 10 12
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (resistive load) ICsat = 2.5 A; IB1 = -IB2 = 0.5 A;
RL = 75 ohms; VBB2 = 4 V;
ton Turn-on time 0.5 0.7 µs
tsTurn-off storage time 3.3 4 µs
tfTurn-off fall time 0.33 0.45 µs
Switching times (inductive load) ICsat = 2.5 A; IB1 = 0.5 A; LB = 1 µH;
-VBB = 5 V
tsTurn-off storage time 1.4 1.6 µs
tfTurn-off fall time 145 160 ns
Switching times (inductive load) ICsat = 2.5 A; IB1 = 0.5 A; LB = 1 µH;
-VBB = 5 V; Tj = 100 ˚C
tsTurn-off storage time 1.7 1.9 µs
tfTurn-off fall time 160 200 ns
1 Measured with half sine-wave voltage (curve tracer).
September 1998 2 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUT11APX
Fig.1. Test circuit for V
CEOsust
.
Fig.2. Oscilloscope display for V
CEOsust
.
Fig
.3.
Test circuit resistive load. V
IM
= -6 to +8 V
V
CC
= 250 V; t
p
= 20
µ
s;
δ
= t
p
/ T = 0.01.
R
B
and R
L
calculated from I
Con
and I
Bon
requirements.
Fig.
4.
Switching times waveforms with resistive load.
Fig.
5.
Test circuit inductive load.
V
CC
= 300 V; -V
BE
= 5 V; L
C
= 200 uH; L
B
= 1 uH
Fig.
6.
Switching times waveforms with inductive load.
+ 50v
100-200R
Horizontal
Vertical
Oscilloscope
1R
6V
30-60 Hz
300R
IC
IB
10 %
10 %
90 %
90 %
ton toff
ts tf
IB1
-IB2
ICsat
tr 30ns
VCE / V min
VCEOsust
IC / mA
100
200
250
0
LB
IB1
-VBB
LC
T.U.T.
VCC
tp
T
VCC
R
RT.U.T.
0
VIM B
L
IC
IB
ICsat
IB1
-IB2
t
t
ts tf
toff
10 %
90 %
September 1998 3 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUT11APX
Fig.
7.
Switching times waveforms with inductive load.
Fig.
8.
Normalised power dissipation.
PD% = 100
⋅
PD/PD
25˚C
= f (T
hs
)
Fig.9. Typical DC current gain. h
FE
= f(I
C
)
parameter V
CE
Fig.10. Collector-Emitter saturation voltage.
Solid lines = typ values, V
CEsat
= f(IB); T
j
=25˚C.
Fig.11. Base-Emitter saturation voltage.
Solid lines = typ values, V
BEsat
= f(IC); at IC/IB =4.
Fig.12. Collector-Emitter saturation voltage.
Solid lines = typ values, V
CEsat
= f(IC); at IC/IB =4.
IC
IB
ICon
IBon
-IBoff
t
t
ts tf
toff
10 %
90 %
0.0
0.4
0.8
1.2
1.6
2.0
0.01 0.10 1.00 10.00
IB/A
VCEsat/V
IC=1A 2A 3A 4A
0 20 40 60 80 100 120 140
Ths / C
%Normalised Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
Ptot
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1 1.0 10.0
IC/A
VBEsat/V
0.0
0.1
0.2
0.3
0.4
0.5
0110
IC/A
VCEsat/V
0.01 1
100
10
1 0.1 10
h
FE
IC / A
Tj = 25 C 1V
5V
September 1998 4 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUT11APX
Fig.13. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
Fig.14. Reverse bias safe operating area. T
j
≤
T
j max
Fig.15. Test circuit RBSOA. V
cl
≤
1000V; V
cc
= 150V;
V
BB
= -5V; L
B
= 1
µ
H; L
c
= 200
µ
H
1u 100u 10m 1 100
t / s
Zth / (K/W)
10
1
0.1
0.01
0.001
D=0
0.5
0.2
0.1
0.05
0.02
10u 1m 100m 10
D =
tp
T
T
P
t
D
t
p
BU1706AX
LB
IBon
-VBB
LC
T.U.T.
VCC
VCL
0 200 400 600 800 1,000
1,200
0
1
2
3
4
5
6
7
8
9
10
11
VCE CLAMP/V
IC/V
September 1998 5 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUT11APX
Fig.16. Forward bias safe operating area. T
hs
≤
25 ˚C
(1) P
tot
max and P
tot
peak max lines.
(2) Second breakdown limits.
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
III Extension during turn-on in single
transistor converters provided that
R
BE
≤
100
Ω
and t
p
≤
0.6
µ
s.
NB: Mounted with heatsink compound and
30
±
5 newton force on the centre of the
envelope.
110 100 1000
100
10
1
0.1
0.01
tp =
10 us
100 us
1 ms
10 ms
DC
IC / A
V / V
ICM max
IC max
II
I
= 0.01
III
500 ms
(1)
(2)
CE
September 1998 6 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUT11APX
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.17. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10.3
max
3.2
3.0
4.6
max
2.9 max
2.8
seating
plane
6.4
15.8
max
0.6
2.5
2.54
5.08
123
3 max.
not tinned
3
0.5
2.5
0.9
0.7
M
0.4
15.8
max. 19
max.
13.5
min.
Recesses (2x)
2.5
0.8 max. depth
1.0 (2x)
1.3
September 1998 7 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUT11APX
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1998 8 Rev 1.000
