AES1A THRU AES1J
175mA. Super Fast Surface Mount Rectifiers
Voltage Range
50 to 600 Volts
Current
175 mAmpere
Features
Glass passivated junction chip
For surface mounted application
Low profile package
Built-in strain relief,
Ideal for automated placement
Easy pick and place
Superfast recovery time for high efficiency
Glass passivated chip junction
High temperature soldering:
260
OC/10 seconds at terminals
Plastic material used carries Underwriters
Laboratory Classification 94V-O
Mechanical Data
Cases: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Packing: tape per E1A STD RS-481
Weight: 0.01 gram
SOD-323F
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number Symbol AES
1A AES
1B AES
1C AES
1D AES
1F AES
1G AES
1H AES
1J Units
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 150 200 300 400 500 600 V
Maximum RMS Voltage VRMS 35 70 105 140 210 280 350 420 V
Maximum DC Blocking Voltage VDC 50 100 150 200 300 400 500 600 V
Marking Code EA EB EC ED EF EG EH EJ
Maximum Average Forward Rectified Current
@85OC
@ 25
OC I(AV)
I(PEAK)
175
625 mA
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method ) IFSM 20 A
Maximum Instantaneous Forward Voltage
IF=175mA @ 85OC
@ 25
OC
1.25
1.45 V
Maximum DC Reverse Current @ TA =25℃
at Rated DC Blocking Voltage IR 0.1
uA
Maximum Reverse Recovery Time ( Note 1 ) Trr 50 nS
Typical Junction Capacitance ( Note 2 ) Cj 5 pF
Maximum Thermal Resistance (Note 3)
RθJA
RθJL 85
35 ℃/W
Operating Temperature Range TJ -40 to +85 ℃
Storage Temperature Range TSTG -40 to + 85 ℃
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied VR=4.0 Volts
3. P.C.B. Mounted on 0.2 x 0.2”(5.0 x 5.0mm) Copper Pad Area.
03.02.2005/rev. a
Preliminary
