1N5908L4G - ON Semiconductor L.L.C.

July, 2005 − Rev. 4 1Publication Order Number:

1N5908/D

1N5908

1500 Watt Mosorbt Zener

Transient Voltage Suppressors

Unidirectional*

Mosorb devices are designed to protect voltage sensitive

components from high voltage, high−energy transients. They have

excellent clamping capability, high surge capability, low zener

impedance and fast response time. These devices are

ON Semiconductor’s exclusive, cost-effective, highly reliable

Surmetic axial leaded package and are ideally-suited for use in

communication systems, numerical controls, process controls,

medical equipment, business machines, power supplies and many

other industrial/consumer applications, to protect CMOS, MOS and

Bipolar integrated circuits.

Features

•Working Peak Reverse Voltage Range − 5 V

•Peak Power − 1500 Watts @ 1 ms

•Maximum Clamp Voltage @ Peak Pulse Current

•Low Leakage < 5 mA Above 10 V

•Response Time is Typically < 1 ns

•Pb−Free Packages are Available

Mechanical Characteristics

CASE: Void-free, transfer-molded, thermosetting plastic

FINISH: All external surfaces are corrosion resistant and leads are

readily solderable

MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:

230°C, 1/16″ from the case for 10 seconds

POLARITY: Cathode indicated by polarity band

MOUNTING POSITION: Any

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Preferred devices are recommended choices for future use

and best overall value.

A = Assembly Location

1N5908 = JEDEC Device Number

YY = Year

WW = Work Week

= Pb−Free Package

(Note: Microdot may be in either location)

MARKING DIAGRAM

5908

YYWW



http://onsemi.com

AXIAL LEAD

CASE 41A

PLASTIC

Cathode Anode

Device Package Shipping†

ORDERING INFORMATION

1N5908 Axial Lead 500 Units/Box

1N5908RL4 Axial Lead 1500/Tape & Reel

1N5908G Axial Lead

(Pb−Free) 500 Units/Box

1N5908RL4G Axial Lead

(Pb−Free) 1500/Tape & Reel

† For information on tape and reel specifications,

including part orientation and tape sizes, please

refer t o our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Uni−Directional TVS

IPP

VRWM

VCVBR VF

1N5908

http://onsemi.com

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Power Dissipation (Note 1)

@ TL ≤ 25°CPPK 1500 W

Steady State Power Dissipation

@ TL ≤ 75°C, Lead Length = 3/8″

Derated above TL = 75°C

PD5.0

mW/°C

Thermal Resistance, Junction−to−Lead RqJL 20 °C/W

Forward Surge Current (Note 2)

@ TA = 25°CIFSM 200 A

Operating and Storage

Temperature Range TJ, Tstg − 65 to +175 °C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit

values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,

damage may occur and reliability may be affected.

1. Nonrepetitive current pulse per Figure 4 and derated above TA = 25°C per Figure 2.

2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.

*Bidirectional device will not be available in this device

ELECTRICAL CHARACTERISTICS (TA = 25°C unless

otherwise noted, VF = 3.5 V Max. @ IF (Note 3) = 100 A)

Symbol Parameter

IPP Maximum Reverse Peak Pulse Current

VCClamping Voltage @ IPP

VRWM Working Peak Reverse Voltage

IRMaximum Reverse Leakage Current @ VRWM

VBR Breakdown Voltage @ IT

ITTest Current

IFForward Current

VFForward Voltage @ IF

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 3) = 53 A)

Device

(Note 4)

VRWM

(Note 5) IR @ VRWM

Breakdown Voltage VC (Volts) (Note 7)

VBR (Note 6) (Volts) @ IT

@ IPP = 120 A @ IPP = 60 A @ IPP = 30 A

(Volts) (mA) Min Nom Max (mA)

1N5908 5.0 300 6.0 − − 1.0 8.5 8.0 7.6

3. Square waveform, PW = 8.3 ms, Non−repetitive duty cycle.

4. 1N5908 is JEDEC registered as a unidirectional device only (no bidirectional option)

5. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to or

greater than the dc or continuous peak operating voltage level.

6. VBR measured at pulse test current IT at an ambient temperature of 25°C and minimum voltages in VBR are to be controlled.

7. Surge current waveform per Figure 4 and derate per Figure 2 of the General Data − 1500 W at the beginning of this group

1N5908

http://onsemi.com

Figure 1. Pulse Rating Curve

100

00 25 50 75 100 125 150 175 200

PEAK PULSE DERATING IN % OF

PEAK POWER OR CURRENT @ T

A= 25 C°

TA, AMBIENT TEMPERATURE (°C)

Figure 2. Pulse Derating Curve

25 50 75 100 125 150 175 200

PD, STEADY STATE POWER DISSIPATION (WATTS)

TL, LEAD TEMPERATURE (°C)

3/8″

Figure 3. Steady State Power Derating

100

001 2 34

t, TIME (ms)

VALUE (%)

tr ≤ 10ms

PEAK VALUE − IPP

HALF VALUE − IPP

Figure 4. Pulse W aveform

PULSE WIDTH (tP) IS DEFINED

AS THAT POINT WHERE THE

PEAK CURRENT DECAYS TO 50%

OF IPP

1ms 10ms 100ms1 ms 10 ms

100

, PULSE WIDTH

PPK, PEAK POWER (kW)

NONREPETITIVE

PULSE WAVEFORM

SHOWN IN FIGURE 5

0.1ms

Figure 5. Typical Derating Factor for Duty Cycle

DERATING FACTOR

1 ms

10 ms

0.7

0.5

0.3

0.05

0.1

0.2

0.01

0.02

0.03

0.07

100 ms

0.1 0.2 0.5 2 5 10 501 20 100

D, DUTY CYCLE (%)

PULSE WIDTH

10 ms

1N5908

http://onsemi.com

APPLICATION NOTES

RESPONSE TIME

In most applications, the transient suppressor device is

placed in parallel with the equipment or component to be

protected. I n this s ituation, t here is a time d elay associated w ith

the capacitance of the device and an overshoot condition

associated with t he inductance of t he d evice a nd t he i nductance

of the connection method. The capacitance effect is of minor

importance in the parallel protection scheme because it only

produces a time delay in the transition from the operating

voltage to the clamp voltage as shown in Figure 6.

The inductive effects in the devi ce are due to act ual turn-on

time ( t ime r equired f or the d evice t o g o f rom z e ro c urrent t o f ull

current) a nd lead i nductance. T hi s i nductive effect p roduces a n

overshoot in the voltage across the equipment or component

being protected as shown in Figure 7. Minimizing this

overshoot is very important in the application, since the main

purpose for adding a transient suppressor is to clamp voltage

spikes. These devices have excellent response time, typically

in the picosecond range and negligible inductance. However,

external inductive effects could produce unacceptable

overshoot. Proper circuit layout, minimum lead lengths and

placing the suppressor device as close as possible to the

equipment or components to be protected will minimize this

overshoot.

Some input impedance represented by Zin is essential to

prevent overstress of the protection device. This impedance

should be as high as possible, without restricting the circuit

operation.

DUTY CYCLE DERATING

The data of Figure 1 applies for non-repetitive conditions

and at a lead temperature of 25°C . If the duty cycle increases,

the peak power must be reduced as indicated by the curves of

Figure 5. A verage power must be derated a s t he l ead or a mbient

temperature rises above 25°C. The average power derating

curve normally given on data sheets may be normalized and

used for this purpose.

At first glance the derating curves of Figure 5 appear to be

in error as t he 1 0 m s p ulse h as a h igher d erating f actor than the

10 ms pulse. However, when the derating factor for a given

pulse of Figure 5 is multiplied by the peak power value of

Figure 1 for the same pulse, the results follow the expected

trend.

TYPICAL PROTECTION CIRCUIT

Vin

Vin (TRANSIENT)

Zin

LOAD

OVERSHOOT DUE TO

INDUCTIVE EFFECTS

tD = TIME DELAY DUE TO CAPACITIVE EFFECT

t t

Figure 6. Figure 7.

CLIPPER BIDIRECTIONAL DEVICES

1. Clipper-bidirectional devices are available in the

1.5KEXXA series an d are designated with a “CA” suffix;

for example, 1.5KE18CA. Contact your nearest ON

Semiconductor representative.

2. Clipper-bidirectional part numbers are tested in both

directions to electrical parameters in preceeding table

(except for VF which does not apply).

3. The 1N6267A through 1N6303A series are JEDEC

registered devices and the registration does not include a

“CA” suffix. To order clip p er-bidirectional devices one

must add CA to the 1.5KE dev ice title.

1N5908

http://onsemi.com

PACKAGE DIMENSIONS

MOSORB

CASE 41A−04

ISSUE D

DIM

MIN MAX MIN MAX

MILLIMETERS

0.335 0.374 8.50 9.50

INCHES

B0.189 0.209 4.80 5.30

D0.038 0.042 0.96 1.06

K1.000 −−− 25.40 −−−

P−−− 0.050 −−− 1.27

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. LEAD FINISH AND DIAMETER UNCONTROLLED

IN DIMENSION P.

4. 041A−01 THRU 041A−03 OBSOLETE, NEW

STANDARD 041A−04.

1N5908

http://onsemi.com

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its of ficers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

1N5908/D

Mosorb and Surmetic is a trademark of Semiconductor Components Industries, LLC.

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor

P.O. Box 61312, Phoenix, Arizona 85082−1312 USA

Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada

Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

ON Semiconductor Website: http://onsemi.com

Order Literature: http://www.onsemi.com/litorder

For additional information, please contact your

local Sales Representative.