Vishay Siliconix
Si4401DDY
Document Number: 66801
S10-1471-Rev. A, 05-Jul-10
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1
P-Channel 40 V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
•TrenchFET
® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch
•POL
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 85 °C/W.
PRODUCT SUMMARY
VDS (V) RDS(on) ()I
D (A)aQg (Typ.)
- 40 0.015 at VGS = - 10 V - 16.1 33 nC
0.022 at VGS = - 4.5 V - 13.3
Ordering Information: Si4401DDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
SO-8
SD
SD
SD
GD
5
6
7
8
Top View
2
3
4
1
S
G
D
P-
C
hannel M
OS
FET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS - 40 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
- 16.1
A
TC = 70 °C - 12.9
TA = 25 °C - 10.2b, c
TA = 70 °C - 8.2b, c
Pulsed Drain Current IDM - 50
Continous Source-Drain Diode Current TC = 25 °C IS
- 5.3
TA = 25 °C - 2.1b, c
Single Pulse Avalanche Current L = 0.1 mH IAS - 28
Single Pulse Avalanche Energy EAS 39 mJ
Maximum Power Dissipation
TC = 25 °C
PD
6.3
W
TC = 70 °C 4
TA = 25 °C 2.5b, c
TA = 70 °C 1.6b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb, d t 10 s RthJA 37 50 °C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 16 20
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Document Number: 66801
S10-1471-Rev. A, 05-Jul-10
Vishay Siliconix
Si4401DDY
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 40 V
VDS Temperature Coefficient VDS/TJID = - 250 µA - 36 mV/°C
VGS(th) Temperature Coefficient VGS(th)/TJ5
Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = - 250 µA - 1.2 - 2.5 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = - 40 V, VGS = 0 V - 1 µA
VDS = - 40 V, VGS = 0 V, TJ = 55 °C - 5
On-State Drain CurrentaID(on) V
DS - 5 V, VGS = - 10 V - 25 A
Drain-Source On-State ResistanceaRDS(on)
VGS - 10 V, ID = - 10.2 A 0.012 0.015
VGS - 4.5 V, ID = - 8.4 A 0.018 0.022
Forward Transconductanceagfs VDS = - 15 V, ID = - 10.2 A 37 S
Dynamicb
Input Capacitance Ciss
VDS = - 20 V, VGS = 0 V, f = 1 MHz
3007
pFOutput Capacitance Coss 335
Reverse Transfer Capacitance Crss 291
Total Gate Charge Qg VDS = - 20 V, VGS = - 10 V, ID = - 10.2 A 64 95
nC
VDS = - 20 V, VGS = - 4.5 V, ID = - 10.2 A
33 50
Gate-Source Charge Qgs 9.8
Gate-Drain Charge Qgd 15.7
Gate Resistance Rgf = 1 MHz 0.4 2 4
Tur n - O n D e l ay Time td(on)
VDD = - 20 V, RL = 2.4
ID - 8.2 A, VGEN = - 4.5 V, Rg = 1
57 86
ns
Rise Time tr 50 75
Turn-Off Delay Time td(off) 40 60
Fall Time tf17 26
Tur n - O n D e l ay Time td(on)
VDD = - 20 V, RL = 2.4
ID - 8.2 A, VGEN = - 10 V, Rg = 1
13 20
Rise Time tr 11 20
Turn-Off Delay Time td(off) 45 68
Fall Time tf918
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISTC = 25 °C - 5.3 A
Pulse Diode Forward Current ISM - 50
Body Diode Voltage VSD IS = - 8.2 A, VGS 0 V - 0.8 - 1.2 V
Body Diode Reverse Recovery Time trr
IF = - 8.2 A, dI/dt = 100 A/µs, TJ = 25 °C
36 54 ns
Body Diode Reverse Recovery Charge Qrr 41 62 nC
Reverse Recovery Fall Time ta20 ns
Reverse Recovery Rise Time tb16
Document Number: 66801
S10-1471-Rev. A, 05-Jul-10
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Vishay Siliconix
Si4401DDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
10
20
30
40
50
0.0 0.5 1.0 1.5 2.0
VGS =10Vthru5V
VGS =4V
VGS =3V
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
0
0.006
0.012
0.018
0.024
0.030
0 1020304050
V
GS
=10V
V
GS
=4.5V
RDS(on) - On-Resistance (Ω)
ID - Drain Current (A)
0
2
4
6
8
10
0 1428425670
ID= 10.2 A
VDS =20V
VDS =10V
VDS =32V
Qg - Total Gate Charge (nC)
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
10
01234
TC= - 55 °C
TC= 125 °C
TC= 25 °C
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
Crss
0
900
1800
2700
3600
4500
0 8 16 24 32 40
Ciss
Coss
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
VGS =10.2V;I
D=10.2A
VGS =4.5V;I
D=8.4A
TJ - Junction Temperature (°C)
(Normalized)
RDS(on) - On-Resistance
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Document Number: 66801
S10-1471-Rev. A, 05-Jul-10
Vishay Siliconix
Si4401DDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
100
0 0.5 1.0 1.5
TJ= 25 °C
TJ= 150 °C
VSD - Source-to-Drain Voltage (V)
IS - Source Current (A)
1.3
1.6
1.9
2.2
2.5
- 50 - 25 0 25 50 75 100 125 150
ID= 250 μA
VGS(th) (V)
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
0
0.01
0.02
0.03
0.04
0.05
246810
ID=10.2A
TJ= 25 °C
TJ= 125 °C
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
Safe Operating Area, Junction-to-Ambient
100
1
0.1 1 10 100
0.01
10
0.1
TA= 25 °C
Single Pulse
1s
10 s
Limited by RDS(on)*
BVDSS Limited
1ms
100 μs
10 ms
DC
100 ms
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specied
ID - Drain Current (A)
Document Number: 66801
S10-1471-Rev. A, 05-Jul-10
www.vishay.com
5
Vishay Siliconix
Si4401DDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
4.5
9.0
13.5
18.0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
ID - Drain Current (A)
Power, Junction-to-Foot
0
2
4
6
8
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power (W)
Power, Junction-to-Ambient
0.00
0.45
0.90
1.35
1.80
0 25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power (W)
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Document Number: 66801
S10-1471-Rev. A, 05-Jul-10
Vishay Siliconix
Si4401DDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?66801.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-3 10-2 1 10 60010-1
10-4 100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Ef fective T ransient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
th J A
= 85 °C/W
3. T JM
- T
A
= P
DM
Z
th J A
(t )
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Foot
10-3 10-2 11010-1
10-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Vishay Siliconix
Package Information
Document Number: 71192
11-Sep-06
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1
DIM
MILLIMETERS INCHES
Min Max Min Max
A 1.35 1.75 0.053 0.069
A10.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q0°8°0°8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
4
3
12
5
6
87
HE
h x 45
C
All Leads
q0.101 mm
0.004"
L
BA
1
A
e
D
0.25 mm (Gage Plane)
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
S
Application Note 826
Vishay Siliconix
www.vishay.com Document Number: 72606
22 Revision: 21-Jan-08
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SO-8
0.246
(6.248)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.172
(4.369)
0.152
(3.861)
0.047
(1.194)
0.028
(0.711)
0.050
(1.270)
0.022
(0.559)
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Revision: 08-Feb-17 1Document Number: 91000
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