2N6383 2N6384 2N6385 NPN SILICON POWER DARLINGTON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3683 SERIES types are NPN Silicon Power Darlington Transistors designed for power amplifier applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25C) Collector-Base Voltage SYMBOL 2N6383 2N6384 2N6385 VCBO 40 60 80 V Collector-Emitter Voltage VCEX 40 60 80 V Collector-Emitter Voltage VCEO 40 60 80 V Emitter-Base Voltage VEBO 5.0 V IC 10 A ICM 15 A IB PD TJ, Tstg 250 mA 100 W -65 to +200 C JC 1.75 C/W Collector Current Peak Collector Current Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEV ICEV ICEO IEBO BVCEO BVCEO BVCEO BVCER BVCER BVCER BVCEV BVCEV BVCEV MAX UNITS UNITS VCEV=Rated VCEO, VBE(off)=1.5V VCEV=Rated VCEO, VBE(off)=1.5V, TC=150C VCE=Rated VCEO 300 A 3.0 mA 1.0 mA VEB=5.0V 10 mA IC=200mA (2N6383) IC=200mA (2N6384) 40 V 60 V IC=200mA (2N6385) IC=200mA, RBE=100 (2N6383) 80 V 40 V IC=200mA, RBE=100 (2N6384) IC=200mA, RBE=100 (2N6385) IC=200mA, VBE(off)=1.5V (2N6383) 60 V 80 V 40 V IC=200mA, VBE(off)=1.5V (2N6384) IC=200mA, VBE(off)=1.5V (2N6385) 60 V 80 V R1 (28-August 2008) Central 2N6383 2N6384 2N6385 TM Semiconductor Corp. NPN SILICON POWER DARLINGTON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TC=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX VCE(SAT) VCE(SAT) VBE(ON) VBE(ON) hFE hFE VF Cob IC=5.0A, IB=10mA IC=10A, IB=100mA VCE=3.0V, IC=5.0A VCE=3.0V, IC=10A VCE=3.0V, IC=5.0A VCE=3.0V, IC=10A IF=10A 1K UNITS 2.0 V 3.0 V 2.8 V 4.5 V 20K 100 |hhe| VCB=10V, IE=0, f=1.0MHz VCE=5.0V, IC=1.0A, f=1.0MHz 20 hhe VCE=5.0V, IC=1.0A, f=1.0kHz 1K 4.0 V 200 pF TO-3 CASE - MECHANICAL OUTLINE R2 LEAD CODE: 1) Base 2) Emitter C) Collector MARKING: FULL PART NUMBER R1 (28-August 2008)