MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N6383 2N6384 2N6385 UNITS
Collector-Base Voltage VCBO 40 60 80 V
Collector-Emitter Voltage VCEX 40 60 80 V
Collector-Emitter Voltage VCEO 40 60 80 V
Emitter-Base Voltage VEBO 5.0 V
Collector Current IC10 A
Peak Collector Current ICM 15 A
Base Current IB250 mA
Power Dissipation PD100 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance ΘJC 1.75 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICEV VCEV=Rated VCEO, VBE(off)=1.5V 300 μA
ICEV VCEV=Rated VCEO, VBE(off)=1.5V, TC=150°C 3.0 mA
ICEO VCE=Rated VCEO 1.0 mA
IEBO VEB=5.0V 10 mA
BVCEO IC=200mA (2N6383) 40 V
BVCEO IC=200mA (2N6384) 60 V
BVCEO IC=200mA (2N6385) 80 V
BVCER IC=200mA, RBE=100Ω (2N6383) 40 V
BVCER IC=200mA, RBE=100Ω (2N6384) 60 V
BVCER IC=200mA, RBE=100Ω (2N6385) 80 V
BVCEV IC=200mA, VBE(off)=1.5V (2N6383) 40 V
BVCEV IC=200mA, VBE(off)=1.5V (2N6384) 60 V
BVCEV IC=200mA, VBE(off)=1.5V (2N6385) 80 V
2N6383
2N6384
2N6385
NPN SILICON POWER
DARLINGTON TRANSISTOR
TO-3 CASE
Central
Semiconductor Corp.
TM
R1 (28-August 2008)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3683 SERIES
types are NPN Silicon Power Darlington Transistors
designed for power amplifier applications.
MARKING: FULL PART NUMBER
Central
Semiconductor Corp.
TM
TO-3 CASE - MECHANICAL OUTLINE
2N6383
2N6384
2N6385
NPN SILICON POWER
DARLINGTON TRANSISTOR
R1 (28-August 2008)
MARKING: FULL PART NUMBER
LEAD CODE:
1) Base
2) Emitter
C) Collector
ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
VCE(SAT) IC=5.0A, IB=10mA 2.0 V
VCE(SAT) IC=10A, IB=100mA 3.0 V
VBE(ON) VCE=3.0V, IC=5.0A 2.8 V
VBE(ON) VCE=3.0V, IC=10A 4.5 V
hFE VCE=3.0V, IC=5.0A 1K 20K
hFE VCE=3.0V, IC=10A 100
VFIF=10A 4.0 V
Cob VCB=10V, IE=0, f=1.0MHz 200 pF
|hhe| VCE=5.0V, IC=1.0A, f=1.0MHz 20
hhe VCE=5.0V, IC=1.0A, f=1.0kHz 1K
R2
