VS-50WQ03FNPbF
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Revision: 14-Jan-11 1Document Number: 94232
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High Performance Schottky Rectifier, 5.5 A
FEATURES
• Popular D-PAK outline
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DESCRIPTION
The VS-50WQ03FNPbF surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and small foot prints on PC board. Typical applications
are in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
PRODUCT SUMMARY
Package D-PAK (TO-252AA)
IF(AV) 5.5 A
VR30 V
VF at IFSee Electrical table
IRM 58 mA at 125 °C
TJ max. 150 °C
Diode variation Single die
EAS 10 mJ
Anode
13
Base
cathode
Anode
4, 2
D-PAK (TO-252AA)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 5.5 A
VRRM 30 V
IFSM tp = 5 μs sine 320 A
VF5 Apk, TJ = 125 °C 0.35 V
TJRange -40 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-50WQ03FNPbF UNITS
Maximum DC reverse voltage VR30 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5 IF(AV) 50 % duty cycle at TC = 136 °C, rectangular waveform 5.5 A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
5 μs sine or 3 μs rect. pulse Following any rated
load condition and with
rated VRRM applied
320
A
10 ms sine or 6 ms rect. pulse 130
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 2 A, L = 5 mH 10 mJ
Repetitive avalanche current IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 2.0 A
VS-50WQ03FNPbF
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Revision: 14-Jan-11 2Document Number: 94232
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Note
(1) Pulse width < 300 μs, duty cycle < 2 %
Note
(1) thermal runaway condition for a diode on its own heatsink
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1 VFM (1)
5 A TJ = 25 °C 0.46
V
10 A 0.53
5 A TJ = 125 °C 0.35
10 A 0.46
Maximum reverse leakage current
See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR
3mA
TJ = 125 °C 58
Threshold voltage VF(TO) TJ = TJ maximum 0.19 V
Forward slope resistance rt22.22 m
Typical junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 590 pF
Typical series inductance LSMeasured lead to lead 5 mm from package body 5.0 nH
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ (1), TStg -40 to +150 °C
Maximum thermal resistance,
junction to case RthJC
DC operation
See fig. 4 3.0 °C/W
Approximate weight 0.3 g
0.01 oz.
Marking device Case style D-PAK (similar to TO-252AA) 50WQ03FN
dPtot
dTJ
------------- 1
RthJA
--------------<
VS-50WQ03FNPbF
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Revision: 14-Jan-11 3Document Number: 94232
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Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1
100
10
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
0.001
1.0
10
100
0.1
0.01
1000
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
105152025
300
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
100
1000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
105 152025 35
30
0
TJ = 25 °C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
VS-50WQ03FNPbF
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Revision: 14-Jan-11 4Document Number: 94232
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Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
120
125
130
135
140
145
150
Allowable Case Temperature (°C)
IF(AV) - Average Forward Current (A)
2134
5678
0
DC
See note (1)
Square wave (D = 0.50)
80 % rated VR applied
0
0.5
1.5
3.0
3.5
2.5
2.0
1.0
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
2134 8567
0
DC
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
100
1000
IFSM - Non-Repetitive Surge Current (A)
tp - Square Wave Pulse Duration (µs)
100 1000 10 000
10
At any rated load condition
and with rated VRRM applied
following surge
VS-50WQ03FNPbF
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Revision: 14-Jan-11 5Document Number: 94232
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ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95016
Part marking information www.vishay.com/doc?95059
Packaging information www.vishay.com/doc?95033
SPICE model www.vishay.com/doc?95408
2- Current rating (5.5 A)
1- Vishay Semiconductors product
3- Package identifier:
W = D-PAK
4- Schottky “Q” series
5- Voltage rating (03 = 30 V)
- FN = TO-252AA (D-PAK)
6
- PbF = lead (Pb)-free
8
7- None = tube (50 pieces)
TR = tape and reel
TRR = tape and reel (right oriented)
TRL = tape and reel (left oriented)
Device code
51 32 4 6 7 8
50VS- W Q 03 FN TRL PbF
Outline Dimensions
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Revision: 05-Dec-12 1Document Number: 95016
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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D-PAK (TO-252AA)
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension uncontrolled in L5
(3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
(4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip
(5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(6) Dimension b1 and c1 applied to base metal only
(7) Datum A and B to be determined at datum plane H
(8) Outline conforms to JEDEC outline TO-252AA
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 2.18 2.39 0.086 0.094 e 2.29 BSC 0.090 BSC
A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410
b 0.64 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070
b2 0.76 1.14 0.030 0.045 L1 2.74 BSC 0.108 REF.
b3 4.95 5.46 0.195 0.215 3 L2 0.51 BSC 0.020 BSC
c 0.46 0.61 0.018 0.024 L3 0.89 1.27 0.035 0.050 3
c2 0.46 0.89 0.018 0.035 L4 - 1.02 - 0.040
D 5.97 6.22 0.235 0.245 5 L5 1.14 1.52 0.045 0.060 2
D1 5.21 - 0.205 - 3 Ø 0° 10° 0° 10°
E 6.35 6.73 0.250 0.265 5 Ø1 0° 15° 0° 15°
E1 4.32 - 0.170 - 3 Ø2 25° 35° 25° 35°
Ø 1
E
(5)
b3 (3) 0.010 CAB
L3 (3)
B
AC
H
C
L2
D (5)
L4
b
2 x e
b2
(2) L5
123
4
Ø 2
A
c2 A
A
H
Seating
plane
c
Detail “C”
(7)
Seating
plane
A1
Detail “C”
Rotated 90 °CW
Scale: 20:1
(L1)
C
C
L
Ø
Gauge
plane
Lead tip
M
0.010 CAB
M
32
4
1
E1
D1
MIN.
0.265
(6.74)
MIN.
0.245
(6.23)
MIN.
0.089
(2.28)
MIN.
0.06
(1.524)
0.488 (12.40)
0.409 (10.40)
0.093 (2.38)
0.085 (2.18)
Pad layout
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