TOSHIBA MOS MEMORY PRODUCTS 131,072 WORD x8 BIT CMOS STATIC RAM SILICON GATE CMOS TC551001PL/FL-70/85/100 DESCRIPTION The TC551001PL/FL is 1,048,576 bit static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated a single 5V supply. Advanced circuit techniques provide both high speed and low power features with a maximum operating current of 5mA/MHz (Typ.} and minimum cycle time of 70/85/100. When CE, is a logical high, the device s placed in low power standby mode in which standby current is 2uA typically. The TC551001PL/FL has three control inputs. FEATURES @ Low Power Dissipation: 27.5mW/MHz (Tyo.) Chip enable inputs (CE,, CE,) allow for device selection and data retention control, and an output enable input, (OE) provides fast memory access. Thus the TC551001 PL/FL is suitacle for use in various microprocessor ap- plication systems where high speed, low power, and battery back up are required. The TC551001PL/FL is offered in both a dual-in-line 32 pins standard plastic package and small-out-line plastic flat package. Access Time 60mA Min cycle | eae reser et as respon Standby Current Access Time (Max.} 70ns 85ns 100ns e BV Single Power Such PL/FL CE, Access Time (Max.) 70ns 85ns 100ns | A CE, Access Time (Max.) 70ns 85ns 100ns Power Down Feature: CE,, CE, Output Enable Time (Max.} 35ns 45ns 5Ons @ Data Retention Supply Voltage: 2.0 ~ .5V - Directly TTL Compatible: All Inputs and Outputs Plastic DIP and Plastic Flat Package PIN CONNECTION (TOP VIEW) TCS51001P PIN CONFIGURATION (128k x Shit CMOS SRAM ) BLOCK DIAGRAM N.C.0 2 32] vec Al6C 2 317 A1S A140 3 30/5 CE2 Al2ac 4 297 WE A7 05 289 A13 46 76 27 A8 45 07 26 Ag A428 25D Ali a3 C9 240 OF AZ 110 23 U A1lO Al 711 220 CEL 40 012 2101/08 1/01 113 2051/07 8 1/02214 1916 3 1/03 715 18l1/705 Q GND 716 1721/04 8 - 1708 PIN NAMES Ao ~ Ai6 Adress Inputs RW Read/Write Control Input OE Output Enable Input CE, , CE, Chip Enable Inputs 1/0, ~ 1/Og Data Inputs/Outputs Vop Power (+5V) GND Ground NLC. No Connection RAV CE1 CE2 #o VDD MEMORY CELL #~ GND ARRAY 32) S12 x 64 x 32 c ps | ey = mM SENSE AMP. Ly ___ , < , COLO ADDRESS Ley & ECOD, } ae i as 7 COLUMN ADDRESS tr 8 Z REGISTER oS o AO Al AZ AS AB AS ALO All 621