AO3409 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3409 is Pb-free (meets ROHS & Sony 259 specifications). AO3409L is a Green Product ordering option. AO3409 and AO3409L are electrically identical. VDS (V) = -30V ID = -2.6 A (VGS = -10V) RDS(ON) < 130m (VGS = -10V) RDS(ON) < 200m (VGS = -4.5V) D TO-236 (SOT-23) Top View G D G S S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. 20 V -20 1.4 W 1 TJ, TSTG C -55 to 150 Symbol t 10s Steady-State Steady-State A -2.2 PD TA=70C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V -2.6 TA=25C Power Dissipation A Maximum -30 RJA RJL Typ 70 100 63 Max 90 125 80 Units C/W C/W C/W AO3409 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250A, VGS=0V -30 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250A -1 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -5 RDS(ON) Static Drain-Source On-Resistance -5 VGS=-10V, ID=-2.6A TJ=125C VGS=-4.5V, I D=-2A Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current VDS=-5V, ID=-2.5A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10) Total Gate Charge(10V) Qg(4.5) Total Gate Charge(4.5V) Qgs Gate Source Charge Units V TJ=55C gFS Max -1 VDS=-24V, VGS=0V IDSS IS Typ 3 -1.9 VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-2.6A 100 nA -3 V A 97 130 135 150 166 200 3.8 -0.82 302 VGS=0V, VDS=-15V, f=1MHz A m m S -1 V -2 A 370 pF 50.3 pF 37.8 pF 12 18 6.8 9 nC 2.4 nC 1.6 nC Qgd Gate Drain Charge 0.95 nC tD(on) Turn-On DelayTime 7.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=-10V, VDS=-15V, RL=5.8, RGEN=3 3.2 ns 17 ns IF=-2.6A, dI/dt=100A/s 16.8 6.8 trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=-2.6A, dI/dt=100A/s ns 22 10 ns nC A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 4: June 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO3409 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 20 -8V VDS=-5V 8 15 -6V 10 -5.5V -5V 25C 6 -ID(A) -ID (A) -10V VGS=-4.5V -4V -3.5V 5 2 -3.0V 0 0 1 2 3 4 125C 4 0 5 1 2 5 6 Normalized On-Resistance 1.6 200 RDS(ON) (m) 4 370 250 150 VGS=-4.5V 100 VGS=-10V 50 18 VGS=-10V 1.4 9 VGS=-4.5V 1.2 ID=-2A 1 0.8 0 1 2 3 4 5 6 0 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 300 1.0E+01 250 1.0E+00 75 100 125 22 150 175 1.0E-01 200 -IS (A) 125C 150 100 50 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID=-2A RDS(ON) (m) 3 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 25C 1.0E-02 125C 25C 1.0E-03 1.0E-04 50 1.0E-05 1.0E-06 0 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO3409 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 500 10 VDS=-15V ID=-2.6A 9 400 Capacitance (pF) 8 -VGS (Volts) 7 6 5 4 3 2 Ciss 300 200 Coss 100 1 0 Crss 0 0 1 2 3 4 5 6 7 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics 370 TJ(Max)=150C TA=25C 20 RDS(ON) limited 10.0 100s 1ms 0.1s TJ(Max)=150C 18 TA=25C 15 10s Power (W) -ID (Amps) 100.0 10ms 1.0 9 10 5 1s 10s DC 0 0.001 0.1 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90C/W 0.01 0.1 1 10 100 22 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000