Symbol
VDS
VGS
IDM
TJ, TSTG
Symbol Ty
p
Max
70 90
100 125
RθJL 63 80
Junction and Storage Temperature Range
A
PD
°C
1.4
1
-55 to 150
TA=70°C
ID
-2.6
-2.2
-20
Pulsed Drain Current B
Power Dissipation A
TA=25°C
Continuous Drain
Current A
Maximum UnitsParameter
TA=25°C
TA=70°C
Absolute Maximum Ratings TA=25°C unless otherwise noted
V
V±20Gate-Source Voltage
Drain-Source Voltage -30
°C/W
Maximum Junction-to-Ambient ASteady-State °C/W
W
Maximum Junction-to-Lead CSteady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient At ≤ 10s RθJA
AO3409
P-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = -30V
ID = -2.6 A (VGS = -10V)
RDS(ON) < 130mΩ (VGS = -10V)
RDS(ON) < 200mΩ (VGS = -4.5V)
General Description
The AO3409 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO3409 is Pb-free
(meets ROHS & Sony 259 specifications). AO3409L
is a Green Product ordering option. AO3409 and
A
O3409L are electrically identical.
S
GD
TO-236
(SOT-23)
Top View
G
D
S
Alpha & Omega Semiconductor, Ltd.
AO3409
Symbol Min Typ Max Units
BVDSS -30 V
-1
TJ=55°C -5
IGSS ±100 nA
VGS(th) -1 -1.9 -3 V
ID(ON) -5 A
97 130
TJ=125°C 135 150
166 200 mΩ
gFS 3 3.8 S
VSD -0.82 -1 V
IS-2 A
Ciss 302 370 pF
Coss 50.3 pF
Crss 37.8 pF
Rg12 18 Ω
Qg(10) 6.8 9 nC
Qg(4.5) 2.4 nC
Qgs 1.6 nC
Qgd 0.95 nC
tD(on) 7.5 ns
tr3.2 ns
tD(off) 17 ns
tf6.8 ns
trr 16.8 22 ns
Qrr 10 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
VGS=-10V, VDS=-15V, ID=-2.6A
IF=-2.6A, dI/dt=100A/µs
VGS=0V, VDS=-15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge(4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=5.8Ω,
RGEN=3Ω
Gate resistance
mΩ
VGS=-4.5V, ID=-2A
IS=-1A,VGS=0V
VDS=-5V, ID=-2.5A
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
IDSS µA
Gate Threshold Voltage VDS=VGS ID=-250µA
VDS=-24V, VGS=0V
VDS=0V, VGS=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-2.6A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=-250µA, VGS=0V
VGS=-4.5V, VDS=-5V
VGS=-10V, ID=-2.6A
Reverse Transfer Capacitance
Total Gate Charge(10V)
A: The value of R
θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R
θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The
SOA curve provides a single pulse rating.
Rev 4: June 2005
Alpha & Omega Semiconductor, Ltd.
AO3409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
370
18
9
22
0
5
10
15
20
012345
-VDS (Volts)
Fig 1: On-Region Characteristics
-ID (A)
VGS=-4.5V
-4V
-5.5V
-10V
-3.5V
0
2
4
6
8
10
123456
-VGS(Volts)
Figure 2: Transfer Characteristics
-ID(A)
50
100
150
200
250
0123456
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON) (mΩ)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics
-IS (A)
25°C125°C
0.8
1
1.2
1.4
1.6
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Normalized On-Resistance
VGS=-10V
0
50
100
150
200
250
300
345678910
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
RDS(ON) (mΩ)
25°C
125°C
VDS=-5V
VGS=-4.5V
VGS=-10V
ID=-2A
25°C
125°C
ID=-2A
-5V
VGS=-4.5V
-3.0V
-8V
-6V
Alpha & Omega Semiconductor, Ltd.
AO3409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
370
18
9
22
0
1
2
3
4
5
6
7
8
9
10
01234567
-Qg (nC)
Figure 7: Gate-Charge Characteristics
-VGS (Volts)
0
100
200
300
400
500
0 5 10 15 20 25 30
-VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
Ciss
0
5
10
15
20
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Power ( W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
ZθJA Normalized Transient
Thermal Resistance
Coss
Crss
0.1
1.0
10.0
100.0
0.1 1 10 100
-VDS (Volts)
-ID (Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
µ
s
10ms
1ms
0.1s
1s
1
0s
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
VDS=-15V
ID=-2.6A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
Ton T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
10µs
Alpha & Omega Semiconductor, Ltd.
