Data Sheet, Doc. No. 5SYA 1323-02 11 02 5SMY 12K1721 IGBT-Die VCE = 1700 V IC = 100 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage 1) Symbol VCES Conditions min VGE = 0 V, Tvj 25 C max Unit 1700 V DC collector current IC 100 A Peak collector current ICM 200 A Gate-emitter voltage VGES 20 V IGBT short circuit SOA tpsc 10 s Junction temperature 1) - 20 VCC = 1300 V, VCEM CHIP 1700 V VGE 15 V, Tvj 150 C Tvj Tvj(op) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 175 -40 150 C IGBT characteristic values 2) Parameter Collector (-emitter) breakdown voltage Collector-emitter saturation voltage Symbol Conditions min V(BR)CES VGE = 0 V, IC = 1 mA, Tvj = 25 C adequate environment 1700 VCE sat IC = 100 A, VGE = 15 V typ Gate leakage current Gate-emitter threshold voltage ICES IGES VGE(TO) Gate charge Qge Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Turn-on delay time td(on) Rise time Turn-off delay time Fall time Turn-on switching energy Turn-off switching energy Short circuit current 2) Characteristic values according to IEC 60747 - 9 2 5SMY 12K1721 | Doc. No: 5SYA 1323-02 tr td(off) tf Eon Eoff ISC VCE = 1700 V, VGE = 0 V Tvj = 25 C 2.5 V Tvj = 125 C 3.0 V Tvj = 150 C 3.1 0.35 mA 1.70 mA IC = 100 A, VCE = 900 V, VGE = 15 V .. 15 V VCC = 900 V, IC = 100 A, VGE = 15 V, RG = 12 , L = 266 nH, inductive load tpsc 10 s, VGE = 15 V, Tvj = 150 C, VCC = 1300 V, VCEM CHIP 1700 V - 500 500 nA 5.4 7.4 V 0.77 C 6.75 nF 0.34 nF 0.23 nF Tvj = 25 C 235 ns Tvj = 125 C 250 ns Tvj = 150 C 254 ns Tvj = 25 C 110 ns Tvj = 125 C 120 ns Tvj = 150 C 125 ns Tvj = 25 C 390 ns Tvj = 125 C 475 ns Tvj = 150 C 500 ns Tvj = 25 C 145 ns Tvj = 125 C 155 ns Tvj = 150 C 160 ns Tvj = 25 C 27 mJ Tvj = 125 C 35 mJ Tvj = 150 C 39 mJ Tvj = 25 C 19 mJ Tvj = 125 C 29 mJ Tvj = 150 C 32 mJ Tvj = 150 C 310 A VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C VCC = 900 V, IC = 100 A, VGE = 15 V, RG = 12 , L = 266 nH, inductive load mA Tvj = 150 C IC = 4 mA, VCE = VGE, Tvj = 25 C VCC = 900 V, IC = 100 A, RG = 12 , VGE = 15 V, L = 266 nH, inductive load V 0.1 Tvj = 125 C VCE = 0 V, VGE = 20 V, Tvj = 125 C VCC = 900 V, IC = 100 A, RG = 12 , VGE = 15 V, L = 266 nH, inductive load Unit V Tvj = 25 C Collector cut-off current max 200 200 175 175 VCE = VGE 150 150 25 C 125 125 C IC [A] IC [A] 125 100 150 C 100 75 75 50 50 25 25 150 C 25 C 125 C VGE = 15 V 0 0 0 1 2 3 4 5 5 6 7 Typical on-state characteristics, chip level Fig. 1 8 9 10 11 12 13 14 15 VGE [V] VCE [V] Fig. 2 Typical transfer characteristics, chip level 20 100 VGE = 0 V fOSC = 1 MHz VOSC = 50 mV VCC = 900 V 15 VCC = 1300 V Cies C [nF] VGE [V] 10 10 1 Coes 5 IC = 100 A Tvj = 25 C Cres 0 0.1 0 Fig. 3 5 10 15 20 Vce[V] 25 Typical capacitances vs collector-emitter voltage 3 5SMY 12K1721 | Doc. No: 5SYA 1323-02 30 0.00 35 Fig. 4 0.20 0.40 Qg [C] Typical gate charge characteristics 0.60 0.80 2.5 VCC 1200 V, Tvj(op) = 150 C VGE = 15 V, RG = 12 ohm 2.0 ICpulse / IC 1.5 1.0 0.5 0.0 0 500 1000 VCE [V] Fig. 5 Safe operating area (RBSOA) 4 5SMY 12K1721 | Doc. No: 5SYA 1323-02 1500 2000 Mechanical properties 3) Parameter Symbol Conditions Overall die exposed front metal Dimensions gate pad LxW 3) 3) Unit 11.42 x 11.39 mm L x W (except gate pad) 9.40 x 9.37 mm LxW 1.73 x 1.76 mm 209 15 m 4 m 1.6 m thickness Metallization min front (E) AlSi1 back (C) Al / Ti / Ni / Ag Package and mechanical properties according to IEC 60747 - 15 4) 5SMY 12K1721 | 5SYA 1323- 02 11 02 Outline drawing Note: all dimensions are shown in millimeters 4) For detailed mounting instructions refer to ABB Document No. 5SYA2039 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for Industrial Level. Related documents: 5SYA 2045 Thermal runaway during blocking 5SYA 2059 Applying IGBT and Diode dies 5SYA 2093-00 Thermal design of IGBT Modules ABB Switzerland Ltd. Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg Switzerland Phone: +41 58 586 1419 Fax: +41 58 586 1306 E-Mail: abbsem@ch.abb.com www.abb.com/semiconductors We reserve the right to make technical changes or to modify the contents of this document without prior notice. We reserve all rights in this document and the information contained therein. Any reproduction or utilisation of this document or parts thereof for commercial purposes without our prior written consent is forbidden. Any liability for use of our products contrary to the instructions in this document is exclude