SIEMENS BCR 185 PNP Silicon Digital Transistor * Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (Ry=10kQ, Ro=47kQ) YPSO5161 Eeapras Type Marking |Ordering Code Pin Configuration Package BCR185 |[WNs _[Q62702-C2263 [1-8 [2-E | 3= SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VcEO 50 Vv Collector-base voltage Vopo 50 Emitter-base voltage Vespo 6 Input on Voltage Viton) | 20 DC collector current Ie 100 mA Total power dissipation, Ts = 102C Prot 200 mW Junction temperature 7 150 C Storage temperature Tstg - 65 ...+ 150 Thermai Resistance Junction ambient Fins $350 KW Junction - soldering point Pings $240 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6em? Cu Semiconductor Group 711 41.96 SIEMENS BCR 185 Electrical Characteristics at T,=25C, unless otherwise specified Parameter Symbol Values Unit min. Ityp. |max. DC Characteristics Cotlector-emitter breakdown voltage Vieryceo Vv Io = 100 PA, Ip =0 50 - - Collector-base breakdown voltage ViprycBo io = 10 PA, Ip =0 50 - - Collector cutoff current IcBo nA Veg = 40 V, fe =0 - - 100 Emitter cutoff current lEBo pA Vep = 6 V, Ic = 0 - - 167 DC current gain tre - lo=5MA, Vog =5V 70 - - Collector-emitter saturation voltage 1) VoEsat Vv Io = 10 mA, fg =0.5 mA - - 0.3 Input off voltage Vicott Io = 100 pA, Vog =5V 0.5 - 1 Input on Voltage Vion) lo=2MA, Veg = 0.3 V 0.5 - 1.4 Input resistor R, 7 10 13 kQ Resistor ratio R,/Re 0.19 0.21 0.24 - AC Characteristics Transition frequency fr MHz ig = 10 MA, Vog = 5 V, f= 100 MHz - 200 - Collector-base capacitance Cob pF Vog = 10 V, f= 1 MHz - 3 - 1) Pulse test: t< 300us; D < 2% Semiconductor Group 712 11.96 SIEMENS DC Current Gain hee = f (Ic) Voe = 5V (common emitter configuration) 107 101 10 10 10 mA fk Input on Voltage Vion) = fic) Voge = 0.3V (common emitter configuration) Vion) Semiconductor Group 713 BCR 185 Collector-Emitter Saturation Voltage Voesat = Alc), fre = 20 102 10" 10 0.0 0.2 0.4 0.6 Vv 4.0 Versa Input off voltage Vior = f/c) Vee = 5V (common emitter configuration) Vion 11.96 SIEMENS | BCR 185 Total power dissipation Pi, = f(Ta*; Ts) * Package mounted on epoxy mw Le et Ci 0 Oo 20 40 60 80 100 120 C 160 e 7,7, Permissible Pulse Load Ainjs = ip) Permissible Pulse Load Piotmax / Prone = Af) 103 Se Kw Ht Rass 102 Pan! ET . A | | { 102 NUT 101 10! HI ut MC rH SS aT fit AN Semiconductor Group 714 11.96