HEXFET® Power MOSFET
2/22/00
IRF7402
Description
Parameter Max. Units
RθJA Maximum Junction-to-Ambient 50 °C/W
Thermal Resistance
lGeneration V Technology
lUltra Low On-Resistance
lN-Channel MOSFET
lVery Small SOIC Package
lLow Profile (<1.1mm)
lAvailable in Tape & Reel
lFast Switching
Top V iew
8
1
2
3
45
6
7
D
D
D
DG
S
A
S
S
A
VDSS = 20V
RDS(on) = 0.035Ω
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characterstics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared or wave soldering techniques.
Power dissipation of greater than 0.8 W is possible in a
typical PCB mount application.
www.irf.com 1
SO-8
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 6.8
ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 5.4 A
IDM Pulsed Drain Current 54
PD @TA = 25°C Power Dissipation 2.5 W
PD @TA = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 W/°C
VGS Gate-to-Source Voltage ± 12 V
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Absolute Maximum Ratings
PD - 93851A
http://store.iiic.cc/
IRF7402
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 3.8A, VGS = 0V
trr Reverse Recovery Time ––– 51 77 ns TJ = 25°C, IF = 3.8A
Qrr Reverse Recovery Charge ––– 69 100 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
––– –––
––– ––– 54
2.5 A
S
D
G
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.024 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.035 VGS = 4.5V, ID = 4.1A
––– 0.050 VGS = 2.7V, ID = 3.5A
VGS(th) Gate Threshold Voltage 0.70 ––– ––– V VDS = VGS, ID = 250µA
gfs Forward Transconductance 6.1 ––– ––– S VDS = 10V, ID = 1.9A
––– ––– 1.0 VDS = 16V, VGS = 0V
––– ––– 25 VDS = 16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 12V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -12V
QgTotal Gate Charge ––– 14 22 ID = 3.8A
Qgs Gate-to-Source Charge ––– 2.0 3.0 nC VDS = 16V
Qgd Gate-to-Drain ("Miller") Charge ––– 6.3 9.5 VGS = 4.5V, See Fig. 6 and 12
td(on) Turn-On Delay Time ––– 5.1 ––– VDD = 10V
trRise Time ––– 47 ––– ID = 3.8A
td(off) Turn-Off Delay Time ––– 24 ––– RG = 6.2Ω
tfFall Time ––– 32 – –– RD = 2.6Ω
Ciss Input Capacitance ––– 650 ––– VGS = 0V
Coss Output Capacitance ––– 300 ––– pF VDS = 15V
Crss Reverse Transfer Capacitance ––– 150 –– – ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
Ω
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
nA
ns
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11) Pulse width ≤ 300µs; duty cycle ≤ 2%.
ISD ≤ 3.8A, di/dt ≤ 96A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
When mounted on 1 inch square copper board, t<10 sec
This data sheet has curves & data from IRF7601
http://store.iiic.cc/
IRF7402
www.irf.com 3
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
0.1 1 10
I , D rain-to-S ource C urre nt (A )
D
V , Dra in -to -So ur c e Vo lta
g
e
(
V
)
DS
20
µ
s PULS E W IDTH
T = 2 5° C
A
VGS
T OP 7. 5V
5.0 V
4.0 V
3.5 V
3.0 V
2.5 V
2.0 V
BOT TOM 1.5V
1.5V
J
0.1
1
10
100
1.5 2.0 2.5 3.0 3.5
T = 25°C
T = 150°C
J
J
GS
V , G ate -to -So u rc e V o lta
g
e
(
V
)
D
I , D ra in-to- So u rce Cu rren t (A )
A
V = 10V
20µs PULSE WID TH
DS
0.1
1
10
100
0.1 1 10
I , D rain-to-S ource C urrent (A)
D
V , Dr a in - to -S o u rc e V o lta
g
e
(
V
)
DS
A
VGS
T OP 7. 5V
5.0 V
4.0 V
3.5 V
3.0 V
2.5 V
2.0 V
BOT TOM 1.5V
1.5V
20
µ
s PULS E W IDTH
T = 150°C
J
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction T em perature
(
°C
)
R , Dra in -to- S ou r ce On R e s is tan c e
DS(on)
(Normalized)
A
V = 4 .5 V
GS
I = 3 .8A
D
Fig 4. Normalized On-Resistance
Vs. Temperature
http://store.iiic.cc/
IRF7402
4www.irf.com
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
0
200
400
600
800
1000
1200
1 10 100
C , Capacitance (pF)
DS
V , Dr ain -to -So u rce Vo lta
g
e
(
V
)
A
V = 0 V , f = 1 M Hz
C = C + C , C S H O RT E D
C = C
C = C + C
GS
is s
g
s
g
d d s
rss
g
d
oss ds
g
d
C
iss
C
oss
C
rss
0
2
4
6
8
10
0 4 8 12 16 20 24
G
GS
A
Q , To ta l Ga te Ch ar
g
e
(
nC
)
FO R TES T CIR CUIT
S E E F IG U R E 9
V , Ga te -to- S o ur ce V o lta g e (V)
I = 3 .8A
V = 1 6 V
D
DS
0.1
1
10
100
0.4 0.8 1.2 1.6 2.0 2.4
T = 25°C
T = 15 0°C
J
J
V = 0 V
GS
V , S ourc e-to-D rain Voltage (V )
I , R e ve rs e D r ain C u rre n t (A )
SD
SD
A
Fig 7. Typical Source-Drain Diode
Forward Voltage Fig 8. Maximum Safe Operating Area
1
10
100
1000
1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 150 C
= 25 C
°°
J
C
V , Drain-to-Source Volta
g
e (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
http://store.iiic.cc/
IRF7402
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10a. Switching Time Test Circuit
+
-
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
VDS
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
Fig 10b. Switching Time Waveforms
RD
VGS
VDD
RGD.U.T.
25 50 75 100 125 150
0.0
2.0
4.0
6.0
8.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectan
g
ular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
http://store.iiic.cc/
IRF7402
6www.irf.com
0.0
0.1
0.2
0.3
03691215
A
I , Drain Current (A)
D
VGS =5V
VGS = 2.5V
R
DS(on)
, Drain-to-Source On Resistance ( Ω )
Fig 13. Typical On-Resistance Vs. Drain
Current Fig 14. Typical On-Resistance Vs. Gate
Voltage
R
DS(on)
, Drain-to-Source On Resistance ( Ω )
0.02
0.03
0.04
0.05
2468
A
D
GS
V , Gate-to-Source Voltage (V)
I = 5.7A
D
Fig 12a. Basic Gate Charge Waveform
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Q
G
Q
GS
Q
GD
V
G
Charge
4.5V
Fig 12b. Gate Charge Test Circuit
http://store.iiic.cc/
IRF7402
www.irf.com 7
SO-8 Package Details
K x 45°
C
8X
L
8X
θ
H
0.25 ( .0 1 0) M A M
A
0 .10 (.00 4)
B 8X
0.2 5 (.0 10 ) M C A S B S
- C -
6X
e
- B -
D
E
- A -
8 7 6 5
1 2 3 4
5
6
5
RECOM MENDED FOOTPRINT
0.72 (.028 )
8X
1 .78 (.07 0)
8X
6.46 ( .255 )
1.27 ( .050 )
3 X
DIM INCHE S MIL L IMETE RS
MIN MAX MIN MAX
A .0532 .0688 1 .35 1 .75
A1 .0040 .0098 0 .10 0 .25
B .014 .018 0 .36 0 .46
C .00 7 5 .00 9 8 0.1 9 0 . 2 5
D .18 9 .19 6 4.8 0 4 . 9 8
E .150 .157 3 .81 3 .99
e .0 5 0 B AS IC 1 .2 7 BAS IC
e 1 .0 2 5 B AS IC 0 .63 5 BA SIC
H .22 8 4 .24 4 0 5.8 0 6 . 2 0
K .011 .019 0 .28 0 .48
L 0.16 .050 0.41 1.27
θ
0 ° 8 ° 0 ° 8 °
NOTES:
1. DIM ENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIM ENSION : INCH.
3. D IMENS IONS AR E S HOWN IN MIL L IMET ERS (INCH ES) .
4. O UTL IN E CONFORMS T O JEDEC OUT L INE MS-012AA.
DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS
MOL D PROT RUSION S NOT TO E XC EED 0.25 ( .0 06 ).
DIM EN SIO NS IS THE LENGT H OF L EAD FOR SOLDERIN G T O A SUBST RATE ..
5
6
A1
e1
θ
SO-8 Part Marking
http://store.iiic.cc/
IRF7402
8www.irf.com
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice. 2/2000
33 0.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
N OT ES :
1. CO NTROLLING DIMENSION : M ILLIMETER.
2 . OUTLINE CONFORMS T O EIA-48 1 & EIA-541.
FEED DIRECTIO N
TERMINAL NUMBER 1
1 2.3 ( .484 )
1 1.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CO NTRO L LING DIM E NSION : MILLIM ETER.
2. ALL DIM ENS ION S ARE SHOWN IN M ILLIM ETER S
(
INCHES
)
.
3. OU TLIN E CO N FORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
http://store.iiic.cc/
