HER603G ........ HER608G 6.0 Amp. Glass Passivated Ultrafast Rectifiers Pb R-6 Current 6.0 A Voltage 200 V to 1000 V * Glass passivated chip junction. * High efficiency, Low VF * High current capability * High reliability * High surge current capability * For use in low voltage, high frequency inventor, free wheeling, and polarity protection application. Dimensions in mm. MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V0 rate flame retardant * Lead: Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed * Polarity: Color band denotes cathode * High temperature soldering guaranteed: 260 C/10 seconds/9.5mm lead lengths at 2.3kg tension * Mounting position: Any * Weight: 1.65 grams Maximum Ratings and Electrical Characteristics at 25 C HER 603G 200 HER 605G 400 HER 606G 600 HER 607G 800 HER 608G 1000 VRRM Maximum Recurrent Peak Reverse Voltage (V) VRMS Maximum RMS Voltage (V) 140 280 420 560 700 VDC Maximum DC Blocking Voltage (V) 200 400 600 800 1000 IF(AV) Maximum Average Forward Rectified Current 9.5mm Lead Length @ TA = 55 C IFSM 6.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load 150 A (JEDEC Method) VF Maximum Instantaneous Forward Voltage at 6.0A IR Maximum DC Reverse Current @ TA = 25 C at Rated DC Blocking Voltage @ TA = 125 C Trr Maximum Reverse Recovery Time from IF = 0.5A; IR = 1A; IRR = 0.25A 50 nS 75 nS Cj Typical Junction Capacitance at 1 MHz and reverse voltage of 4VDC 80 pF 65 pF Rth (j-a) Typical Thermal Resistance Tj Operating Temperature Range -65 to + 150 C Tstg Storage Temperature Range -65 to + 150 C 1.0 V 1.3 V 1.7 V 10 A 200 A 37 C/W NOTE: Mount on Cu-Pad size 5mm x 5mm on PCB. Jun - 08 HER603G ........ HER608G Rating And Charasterictic Curves MAXIMUM FORWARD CURRENT DERATING CURVE SG 05 R6 10 HE 1 HER603SG 0.1 HER606SG-HT608SG 0.01 0 IFSM, peak forward surge current (A) IF(AV), average forward current (A) 100 0.4 0.2 0.6 0.8 1.0 6.0 Single Phase Half Wave 60Hz Resistive or Inductive Load 9.5mm Lead Length 5.0 4.0 3.0 2.0 1.0 0 1.4 1.2 0 25 50 75 125 100 150 VF, forward voltage (V) Tamb, ambient temperature (C) MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT TYPICAL JUNCTION CAPACITANCE 175 175 250 8.3ms Single Half Sine Wawe JEDEC Method 200 Cj, junction capacitance (pF) IF, instantaneous forward current (A) TYPICALFORWARD CHARACTERISTIC 150 100 50 10 50 100 125 HE R6 03S G 100 HE R6 06 SG 75 1000 -HE R6 05S G -HE 50 R6 08 SG 25 0 0.1 0 1 150 0.5 1 Number of cycles at 60 Hz 2 5 10 20 50 100 800 VR, reverse voltage (V) IR, Instantaneous reverse current (A) TYPICAL REVERSE CHARACTERISTIC 1000 REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 100 50W NON INDUCTIVE Tj = 125 C trr 10W NON INDUCTIVE +0.5A 10 Tj = 75 C (+) 50vDC (APPROX) (-) 1 Tj = 25 C (-) DUT 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) PULSE GENERATOR (NOTE 2) (+) 0.1 0 -0.25A -1.0A NOTES: 1. Rise Time = 7ns max. Input Impedance = 1 megohm 22 pf 2. Rise Time = 10 ns max. Sourse Impedance = 50 ohms 0.01 0 20 40 60 80 100 120 1cm SET TIME BASE FOR 5/ 10ns/ cm 140 Percent of rated peak reverse voltage (%) Jun - 08