RFSW2041DSB - RF Micro Devices, Inc. (RFMD)

Features

1 of 6

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

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Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

InP HBT

LDMOS

RF MEMS

RFSW2041D

DC TO 25GHz GaAs SPDT SWITCH

RFMD’s RFSW2041D is a reflective SPDT GaAs microwave monolithic inte-

grated circuit (MMIC) switch designed using the RFMD FD05 0.5m

switch process. The RFSW2041D is developed for broadband communica-

tions, instrumentation, and electronic warfare.

RF1

RF2

RFSW2041D

Low Insertion Loss: 1.1dB at

20GHz

High Isolation: 45dB at

20GHz

Excellent Return Loss

20nS Switching Speed

GaAs pHEMT Technology

Applications

Broadband Communications

Test Instrumentation

Fiber Optics

Military

Aerospace

DS111221



Package: Die, 1.91mmx2.11mmx0.10mm

RFSW2041D

DC to 25 GHz

GaAs SPDT

Switch

Parameter Specification Unit Condition

Min. Typ. Max.

Operating Frequency DC 25 GHz

Insertion Loss (0GHz to 5GHz) 0.9 1.4 dB ON State

Insertion Loss (5GHz to 10 GHz) 0.8 1.6 dB ON State

Insertion Loss (10GHz to 15GHz) 0.9 1.7 dB ON State

Insertion Loss (15GHz to 20GHz) 1.1 1.9 dB ON State

Insertion Loss (20 GHz to 25GHz) 1.4 dB ON State

Isolation (DC to 5GHz) 41 50 dB ON State (Measured at Inactive Port)

Isolation (5GHz to 25GHz) 36 43 dB ON State (Measured at Inactive Port)

Isolation (DC to 5GHz) 36 44 dB OFF State

Isolation (5GHz to 25GHz) 32 35 dB OFF State

Input Return Loss (DC to 25GHz) 14 15 dB ON State

Output Return Loss (DC to 25GHz) 11 13 dB ON State

IIP3 34 39 dBm 100MHz spacing 2dBm input

IIP2 62 67 dBm 100MHz spacing 2dBm input

Switching Speed 20 25 ns 50% control to 90% RF

Control Current 30 50 uA Sum of all control lines

Control Voltage -3 -5 -8 VDC

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RFSW2041D

Typical Electrical Performance

Absolute Maximum Ratings

Parameter Rating Unit

Drain Bias Voltage (VCTRL)-10V

RF Input Power +30 dBm

Storage Temperature -40 to +150 °C

Operating Temperature -40 to +85 °C

ESD JESD22-A114 Human Body

Model (HBM) Class 1A (All Pads)

Caution! ESD sensitive device.

Exceeding any one or a combination of the Absolute Maximum Rating conditions may

cause permanent damage to the device. Extended application of Absolute Maximum

Rating conditions to the device may reduce device reliability. Specified typical perfor-

mance or functional operation of the device under Absolute Maximum Rating condi-

tions is not implied.

RoHS status based on EUDirective2002/95/EC (at time of this document revision).

The information in this publication is believed to be accurate and reliable. However, no

responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any

infringement of patents, or other rights of third parties, resulting from its use. No

license is granted by implication or otherwise under any patent or patent rights of

RFMD. RFMD reserves the right to change component circuitry, recommended appli-

cation circuitry and specifications at any time without prior notice.

-1.6

-1.4

-1.2

-1

-0.8

-0.6

-0.4

-0.2

0 5 10 15 20 25

GHz

Insertion Loss over Temperature (High = -5V, Low = 0V)

25C

85C

-40C

-80

-70

-60

-50

-40

-30

-20

-10

0 5 10 15 20 25

GHz

On State Isolation over Temperature (High = -5V, Low = 0V)

25C

85C

-40C

-24

-21

-18

-15

-12

-9

-6

-3

0 5 10 15 20 25

GHz

Input Return Loss over Temperature (High = -5V, Low = 0V)

25C

85C

-40C

-80

-70

-60

-50

-40

-30

-20

-10

0 5 10 15 20 25

GHz

Off State Isolation over Temperature (High = -5V, Low = 0V)

25C

85C

-40C

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RFSW2041D

-24

-21

-18

-15

-12

-9

-6

-3

0 5 10 15 20 25

GHz

Output Return Loss over Temperature (High = -5V, Low = 0V)

25C

85C

-40C

38.5

39.5

40.5

0 5 10 15 20 25

dBm

GHz

IIP3 (High = -5V, Low = 0V, +2dBm input)

-40C

25C

85C

0 5 10 15 20 25

dBm

GHz

IIP3 over control voltage (Low = 0V, 25C, +2dBm input)

-8V

-5V

-3V

0 5 10 15 20 25

dBm

GHz

IIP2 (High = -5V, Low = 0V, +2dBm input)

-40C

25C

85C

0 5 10 15 20 25

dBm

GHz

IIP2 over control voltage (Low = 0V, 25C, +2dBm input)

-8V

-5V

-3V

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support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

RFSW2041D

Die Layout



DC and GND b ondpad s are 88 x88um.

RF bon dpads are 88x15 0um.

All units are in um.

1910

38 3

636

1250

1400

1550

1736

383

636

1250

1400

1550

1736

1205

1055

905

146

1963

2110

503

700

1410

1607

RFin

RF1

RF2

V3 V4

V11

V22

V33

V44

Gnd

Gnd Gnd

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RFSW2041D

Truth Table

Pin Function Description Interface Schematic

1RFIN

RF input. This pad is DC coupled and matched to 50 from DC to 20GHz.

50 microstrip transmission line on 0.127mm (5mil) thich alumnia thin

film substrate is recommended.

2RF1, RF2

RF output. This pad is DC coupled and matched to 50 from DC to

20GHz. 50 microstrip transmission line on 0.127mm (5mil) thich alum-

nia thin film substrate is recommended.

3 V1, V2, V3,

DC control pad for switch operation. Nominal operating voltage is -5V.

4V11, V22,

V33, V44

Alternate bonding locations for V1, V2, V3, V4.

5GND

Provides ground path for probe measurements.

Control Line RF Path

V1 V2 V3 V4

High Low High Low RFIN - RF1

Low High Low High RFIN - RF2

Low High High Low OFF (High Isolation)

High= -3V to -8V (-5V nominal), Low=0, ±0.2V

RFIN

RFout

2kohm

5pF

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support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

RFSW2041D

Measurement Technique

All specifications and typical performances reported in this document were based on data taken with the equipment listed in

the stated manner.

Data was taken using a temperature controlled probe station utilizing 150um pitch GSG probes. The probes were placed on a

ceramic coplanar to microstrip launch. The launch was then wire bonded to the die using two 1 mil bondwires. The spacing

between the launch and the die was 200um, and the bondwire loop height was 100um. the thickness of the test interface was

125um (5mil).

The calibration included the probes and test interfaces, so that the measurement reference plane was at the point of bondwire

attachment. Therefore, all data represents the part and accompanying bondwires.

Insertion Loss, Return Loss, and Isolation data were taken using an Agilent E8363B PNA.

IIP3 and IIP2 data were taken utilizing a pair of Agilent E8257D signal generators and an Agilent E4446A PSA.

Preferred Assembly Instructions

GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The

back of the die is metallized and the recommended mounting method is by the use of conductive epoxy. Epoxy should be

applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy onto the top face of the die. Ideally

it should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended and for manual dispense

Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150°C for one hour in an oven

especially set aside for epoxy curing only. If possible the curing oven should be flushed with dry nitrogen. The gold-tin (80% Au

20% Sn) eutectic die attach has a melting point of approximately 280°C but the absolute temperature being used depends on

the leadframe material used and the particular application. The time at maximum temperature should be kept to a minimum.

This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4um diameter

gold wire be used. Recommended lead bond technique is thermocompression wedge bonding with 0.001" (25m) diameter

wire. Bond force, time stage temperature, and ultrasonics are all critical parameters and the settings are dependent on the

setup and application being used. Ultrasonic or thermosonic bonding is not recommended. Bonds should be made from the

die first and then to the mounting substrate or package. The physical length of the bondwires should be minimized especially

when making RF or ground connections.

Handling Precautions

To avoid damage to the devices, care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions

should be observed at all stages of storage, handling, assembly, and testing.

ESD/MSL Rating

These devices should be treated as Class 1A (250V to 500V) using the human body model as defined in JEDEC Standard No.

22-A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. This is an unpack-

aged part and therefore no MSL rating applies.

Ordering Information

Part Number Description Delivery Method Quantity

RFSW2041DS2 DC to 25GHZ GaAs SPDT Switch Waffle Pak 2 pc

RFSW2041DSB DC to 25GHz GaAs SPDT Switch Waffle Pak 5 pc

RFSW2041DSQ DC to 25GHz GaAs SPDT Switch Waffle Pak 25 pc

RFSW2041D DC to 25GHz GaAs SPDT Switch Waffle Pak 100 pc