SBD T y p e : C10T06Q OUTLINE DRAWING (S B D) Construction: Schottky Barrier Diode Application : High Frequency Rectification Approx Net Weight:1.4g / Maximum Ratings Rating Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Symbol C10T06Q Unit VRRM 60 V VRSM 65 V IO 10 50 Hz Tc=108 Full Sine Wave, Resistive Load 11.1 IF(RMS) IFSM 110 A A 50 Hz , 1, Full Sine Wave,1cycle,Nonrepetitive A Tjw 40 + 150 Tstg 40 + 150 / Electrical Thermal Characteristics Characteristics Peak Reverse Current Peak Forward Voltage () Thermal Resistance(Junction to Case) Symbol IRM VFM Rth(jc) Conditions Tj= per Tj= per 25 , VRM= VRRM arm 25 , IFM= 5 A arm Junction to Case Min. Typ. Max. Unit 5 mA 0.58 V 3 /W FORWARD CURRENT VS. VOLTAGE C10T06Q/C10T06Q-11A (per Arm) INSTANTANEOUS FORWARD CURRENT (A) 20 10 5 2 Tj=25C Tj=150C 1 0.5 0 0.2 0.4 0.6 0.8 1.0 1.2 INSTANTANEOUS FORWARD VOLTAGE (V) 0 180 AVERAGE FORWARD POWER DISSIPATION CONDUCTION ANGLE C10T06Q/C10T06Q-11A (Total) AVERAGE FORWARD POWER DISSIPATION (W) 8 RECT 180 SINE WAVE 7 6 5 4 3 2 1 0 0 2 4 6 8 AVERAGE FORWARD CURRENT (A) 10 12 - PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE Tj= 150 C C10T06Q/C10T06Q-11A (per Arm) PEAK REVERSE CURRENT (mA) 500 200 100 50 0 10 20 30 40 50 60 70 PEAK REVERSE VOLTAGE (V) AVERAGE REVERSE POWER DISSIPATION C10T06Q/C10T06Q-11A (Total) AVERAGE REVERSE POWER DISSIPATION (W) 14 RECT 180 12 10 8 SINE WAVE 6 4 2 0 0 10 20 30 40 REVERSE VOLTAGE (V) 50 60 70 0 180 - AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE CONDUCTION ANGLE V RM =60 V C10T06Q/C10T06Q-11A (Total) 12 AVERAGE FORWARD CURRENT (A) RECT 180. SINE WAVE. 10 8 6 4 2 0 0 25 50 75 100 125 150 CASE TEMPERATURE (C) SURGE CURRENT RATINGS f=50Hz,Sine Wave,Non-Repetitive,No Load C10T06Q/C10T06Q-11A SURGE FORWARD CURRENT (A) 120 100 80 60 40 20 I FSM 0.02s 0 0.02 0.05 0.1 0.2 TIME (s) 0.5 1 2 JUNCTION CAPACITANCE VS. REVERSE VOLTAGE Tj=2 5 C,V m = 20m V RM S ,f= 100 kHz ,Ty pica l V alue C10T06Q/C10T06Q-11A (per Arm) JUNCTION CAPACITANCE (pF) 1000 500 200 100 50 0.5 1 2 5 10 REVERSE VOLTAGE (V) 20 50 100