VMB150-28 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .500 6L FLG DESCRIPTION: A C The ASI VMB150-28 is Designed for 2x ON FULL R D FEATURES: * * * OmnigoldTM Metalization System B G 60 V VCE 35 V PDISS 140 W @ TC = 25 OC O TJ -65 C to +200 C TSTG -65 OC to +150 OC JC 0.65 OC/W CHARACTERISTICS SYMBOL inches / mm A .150 / 3.43 .160 / 4.06 MAXIMUM .045 / 1.14 C .210 / 5.33 .220 / 5.59 D .835 / 21.21 .865 / 21.97 E .200 / 5.08 .210 / 5.33 F .490 / 12.45 .510 / 12.95 G .003 / 0.08 .007 / 0.18 .125 / 3.18 .725 / 18.42 I J .970 / 24.64 .980 / 24.89 K .090 / 2.29 .105 / 2.67 L .150 / 3.81 .170 / 4.32 .285 / 7.24 M .120 / 3.05 N .135 / 3.43 ORDER CODE: ASI10750 O NONETEST CONDITIONS IC = 50 mA BVCER IC = 50 mA BVEBO IE = 10 mA ICES VE = 28 V hFE VCE = 5.0 V Cob VCB = 28 V C inches / mm TC = 25 C BVCEO PG L MINIMUM H O J I DIM B 10 A VCB M K H MAXIMUM RATINGS IC E .725/18,42 F VCC = 28 V MINIMUM TYPICAL MAXIMUM RBE = 10 IC = 1.0 A 35 V 60 V 4.0 V 10 f = 1.0 MHz POUT = 150 W f = 88 MHz UNITS 13 mA 100 --- 335 pF dB 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. 5 % REV. A 1/1