MJ10007
Silicon NPN Transistor
HV Darlington Power Amp, Switch
TO−3 Type Package
Description:
The MJ10007 is a silicon NPN Darlington transistor in a TO−3 type package designed for high voltage,
high−speed, power switching in inductive circuits where fall−time is critical. It is particularly suited for
line operated switch−mode applications.
Applications:
DSwitching Regulators
DInverters
DSolenoid and Relay Drivers
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO(sus) 400V.................................................
Collector−Emitter Voltage, VCEX(sus) 450V.................................................
Collector−Emitter Voltage, VCEV 500V.....................................................
Emitter−Base Voltage, VEB 8V...........................................................
Collector Current, IC
Continuous 10A..................................................................
Peak (Note 1) 20A................................................................
Base Current, IB
Continuous 2.5A.................................................................
Peak (Note 1) 5.0A...............................................................
Total Power Dissipation (TC = +25C), PD150W...........................................
Derate Above +25C 0.86W/C.....................................................
Total Power Dissipation (TC = +100C), PD100W..........................................
Operating Junction Temperature Range, TJ−65 to +200C..................................
Storage Temperature Range, Tstg −65 to +200C..........................................
Thermal Resistance, Junction−to−Case, RthJC 1.17C/W....................................
Lead Temperature (During Soldering, 1/8” from case, 5sec), TL+275C.......................
Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle 10%.
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics (Note 2)
Collector−Emitter Sustaining Voltage VCEO(sus) IC = 250mA, IB = 0, Vclamp = 400V 400 − − V
VCEX(sus) IC = 1A, Vclamp = 450V, TC = +100C 450 − − V
IC = 5A, Vclamp = 450V, TC = +100C 325 − − V
Collector Cutoff Current ICEV VCEV = 500V, VBE(off) = 1.5V − − 0.25 mA
VCEV = 500V, VBE(off) = 1.5V, TC = +100C− − 5.0 mA
ICER VCEV= 500V, RBE= 50, TC = +100C− − 5.0 mA
Emitter Cutoff Current IEBO VEB = 8V, IC = 0 − − 175 mA
ON Characteristics (Note 3)
DC Current Gain hFE VCE = 5V, IC = 2.5A 40 −500
VCE = 5V, IC = 5A 30 −300
Collector−Emitter Saturation Voltage VCE(sat) IC = 5A, IB = 250mA − − 1.9 V
IC = 5A, IB = 250mA, TC = +100C− − 2.0 V
IC = 10A, IB = 1A − − 2.9 V
Base−Emitter Saturation Voltage VBE(sat) IC = 5.2A, IB = 250mA − − 2.5 V
IC = 5A, IB = 250mA, TC = +100C− − 2.5 V
Diode Forward Voltage VFIF = 5A, Note 3 −3 5 V
Dynamic Characteristics
Small−Signal Current Gain hfe VCE = 10V, IC = 1A, ftest = 1MHz 10 − −
Output Capacitance Cob VCB = 50V, IE = 0, ftest = 100kHz 60 −275 pF
Switching Characteristics (Resistive Load)
Delay Time tdVCC = 250V, IC = 5A, IB1 = 250mA,
VBE(off) = 5V, tp = 50s, Duty Cycle 2%
−0.05 0.2 s
Rise Time tr−0.25 0.6 s
Storage Time ts−1.2 3.0 s
Fall Time tf−0.6 1.5 s
Switching Characteristics (Inductive Load, Clamped)
Storage Time tsv IC = 5A Peak, Vclamp = 450V, IB1 = 250mA,
VBE(off) = 5V, TC = +100C
−2.1 5.0 s
Crossover Time tc−1.3 3.3 s
Storage Time tsv IC = 5A Peak, Vclamp = 450V, IB1 = 250mA,
VBE(off) = 5V, TC = +25C
−0.92 −s
Crossover Time tc−0.5 −s
Note 2. Pulse test: Pulse Width = 300s, Duty Cycle 2%.
Note 3. The internal Collector−Emitter diode can eliminate the need for an external diode to clamp
inductive loads. Tests have shown that the Forward Recovery Voltage (VF) of this diode is
comparable to that of typical fast recovery rectifiers.
1.187 (30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02).312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/CaseBase
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
B
C
E
