Silicon Controlled Rectifier
Rev. V4
2N23232N2329
1
1
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1
Features
Available in JAN, JANTX, JANTXV per MIL-PRF-
19500/276
TO-5 & TO-39 (TO-205AD) Package
Electrical Characteristics
Symbol Min. Max. Units Characteristics
Subgroup 2 Testing
Reverse Blocking Current
R2 = 1 kΩ
R2 = 2 kΩ
VR = 50 Vdc
VR = 100 Vdc
VR = 200 Vdc
VR = 300 Vdc
VR = 400 Vdc
2N2323, S - 2N2329, S
2N2323A, AS - 2N2329A, AS
2N2323, S, A, AS
2N2324, S, A, AS
2N2326, S, A, AS
2N2328, S, A, AS
2N2329, S, A, AS
IRBX1 10 µAdc
Forward Blocking Current
R2 = 1 kΩ
R2 = 2 kΩ
VR = 50 Vdc
VR = 100 Vdc
VR = 200 Vdc
VR = 300 Vdc
VR = 400 Vdc
2N2323, S - 2N2329, S
2N2323A, AS - 2N2329A, AS
2N2323, S, A, AS
2N2324, S, A, AS
2N2326, S, A, AS
2N2328, S, A, AS
2N2329, S, A, AS
IFBX1 10 µAdc
Reverse Gate Current
(VKG = 6 Vdc) Ikg 200 µAdc
Gate Trigger Voltage & Current
V2 = VFBX = 6 Vdc; RL = 100 W
Re = 1 kΩ
Re = 2 kΩ
2N2323, S - 2N2329, S
2N2323A, AS - 2N2329A, AS
VGT1
IGT1
VGT1
IGT1
0.35
0.35
0.80
200
0.60
20
Vdc
µAdc
Vdc
µAdc
Subgroup 4 Testing
Exponential Rate of Voltage Rise
TA = 125°C
50 Ω RL ≤ 400 W, C = 0.1 to 1.0 µF,
repetition rate = 60 pps,
test duration = 15 seconds
dv/dt = 1.8 v/µs, R3 = 1 kΩ
dv/dt = 0.7 v/ms, R3 = 2 kW
VR = 50 Vdc
VR = 100 Vdc
VR = 200 Vdc
VR = 300 Vdc
VR = 400 Vdc
2N2323, S - 2N2329, S
2N2323A, AS - 2N2329A, AS
2N2323, S, A, AS
2N2324, S, A, AS
2N2326, S, A, AS
2N2328, S, A, AS
2N2329, S, A, AS
VFBX
47
95
190
285
380
Vdc
Forward “on” Voltage
IFM = 4a (pk) (pulse), pulse width =
8.5 ms, max; duty cycle = 2% max.
VFM 2.2 V(pk)
Holding Current
VAA = 24 Vdc max., IF1 = 100 mAdc,
IF2 = 10 mAdc
Gate trigger source voltage = 6 Vdc,
trigger pulse width = 25 µs min.
R2 = 330 Ω
R3 = 1 kΩ
R3 = 2 kΩ
2N2323, S - 2N2329, S
2N2323A, AS - 2N2329A, AS IHOX 2 mAdc
Silicon Controlled Rectifier
Rev. V4
2N23232N2329
2
2
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For further information and support please visit:
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2
Absolute Maximum Ratings
Ratings Symbol 2N2323, S/
2N2323A, S
2N2324, S/
2N2324A, S
2N2326, S/
2N2326A, S
2N2328, S/
2N2328A, S
2N2329, S/
2N2329A, S Unit
Reverse Voltage VRM 50 100 200 300 400 Vdc
Working Peak Reverse Voltage VRM 75 150 300 400 500 Vpk
Forward Blocking Voltage VFBXM 503,4 1003,4 2003,4 3003,4 4003,4 Vpk
Average Forward Current1 IO 0.22 Adc
Forward Current Surge Peak2 IFSM 15 Adc
Cathode-Gate Current VKGM 6 Vpk
Operating Temperature TOP -65 to +125 °C
Storage Junction Temperature TSTG -65 to +150 °C
1. This average forward current is for an ambient temperature of 80°C and 180 electrical degrees of conduction.
2. Surge current is non-recurrent. The rate of rise of peak surge current shall not exceed 40 A during the first 5 µs after switching from the
‘off’ (blocking) to the ‘on’ (conducting) state. This is measured from the point where the thyristor voltage has decayed to 90% of its initial
blocking value.
3. Gate connected to cathode through 1,000 ohm resistor.
4. Gate connected to cathode through 2,000 ohm resistor.
Silicon Controlled Rectifier
Rev. V4
2N23232N2329
3
3
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3
Outline Drawing (TO-5 & TO-39)
LTR
Dimensions
Note Inches Millimeters
MIN MAX MIN MAX
CD 0.305 0.335 7.75 8.51
CH 0.240 0.260 6.10 6.60
HD 0.335 0.370 8.51 9.40
LC 0.200 TP 5.08 TP 7
LD 0.016 0.021 0.041 0.053 8, 9
LL 8,11,14
LU 0.016 0.019 0.041 0.048 8, 9
L1 0.050 1.27 8, 9
L2 0.250 6.35 8, 9
P 0.100 2.54 7
Q 0.050 1.27 5
TL 0.029 0.045 0.74 1.14
TW 0.028 0.034 0.71 0.86
r 0.010 0.25 10
45° TP 45° TP 7
1, 2, 10, 12, 13, 14
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. CD shall not vary more than 0.010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
7. Leads at gauge plane 0.054 +0.001 –0.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within 0.007 inch (0.18 mm) radius of
true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods or by
gauging procedure.
8. Dimension LU applies between L, and L,. Dimension LD applies between L, and LL minimum. Diameter is uncontrolled in and beyond LL
minimum.
9. All three leads.
10. The collector shall be internally connected to the case.
11. Dimension r (radius) applies to both inside corners of tab.
12. In accordance with ASME Y14.5M, diameters are equivalent to Фx symbology.
13. Lead 1 = cathode, lead 2 = gate, lead 3 = anode. The anode shall be internally connected to the case.
14. For non-S-suffix devices (T0-5), dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. For S-suffix types (T0-39),
dimension LL = 0.5 inch (12.70 mm) min. and 750 inch (19.05 mm) max.
Silicon Controlled Rectifier
Rev. V4
2N23232N2329
4
4
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
www.vptcomponents.com
4
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