Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS2422
DESCRIPTION:DESCRIPTION:
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 65 V
VCES Collector-Emitter Voltage 65 V
VEBO Emitter-Base Voltage 3.5 V
IC Device Current 22 A
PDISS Power Dissipation 875 W
TJ Junction Temperature 200 ºC
TSTG Storage Temperature -65 to +150 ºC
Thermal DataThermal Data
RTH(J-C) Junction-case Thermal Resistance 0.20 °°C/W
Features
• DESIGNED FOR HIGH POWER PULSED IFF, DME, AND
TACAN APPLICATIONS
• 350 W (typ.) IFF 1030 – 1090 MHz
• 300 W (min.) DME 1025 – 1150 MHz
• 290 W (typ.) TACAN 960 – 1215 MHz
• 960 – 1215 MHz
• GOLD METALLIZATION
• POUT = 300W MINIMUM
• GP = 6.3 dB MINIMUM
• INFINITE VSWR CAPABILITY @ RATED CONDITIONS
• EMITTER BALLASTED
• COMMON BASE
The MS2422 is a gold metallized silicon, NPN power transistor
designed for applications requiring high peak power and low duty
cycles such as IFF, DME, and TACAN. The MS2422 is designed
with internal input/output matching resulting in improved
broadband performance and low thermal resistance.
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS2422
ELECTRICAL SPECIFICATIONS (Tcase = 25 ELECTRICAL SPECIFICATIONS (Tcase = 25°°C)C)
STATICSTATIC Value
Symbol Test Conditions Min. Typ. Max. Unit
BVCBO IC = 10 mA IE = 0 mA 65 --- --- V
BVCES IC = 25 mA VBE = 0 V 65 --- --- V
BVEBO IE = 5.0 mA IC = 0 mA 3.5 --- --- V
ICES VCE = 50 V IE = 0 mA --- --- 25 mA
hFE VCE = 5 V IC = 1A 10 --- --- mA
DYNAMIDYNAMICC Value
Symbol Test Conditions Min. Typ. Max. Unit
POUT f = 1025 - 1150 MHz PIN = 70W VCE = 50V 300 --- --- W
GP f = 1025 - 1150 MHz PIN = 70W VCE = 50V 6.3 --- --- dB
ηηC f = 1025 - 1150 MHz PIN = 70W VCE = 50V 35 --- --- %
Conditions
Pulse Width = 10 µµs Duty Cycle = 1%
IMPEDANCE DATAIMPEDANCE DATA
FREQ ZIN(Ω)Ω) ZCL(Ω)Ω)
960 MHz 5.1 + j1.0 2.2 – j3.5
1090 MHz 4.2 + j0.5 2.5 – j3.5
1215 MHz 7.5 + j1.5 2.3 – j1.5
Pin = 70W Vce = 50V
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS2422
TYPICAL PERTYPICAL PERFORMANCEFORMANCE
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS2422
TEST CIRCUITTEST CIRCUIT
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS2422
PACKAGE MECHANICAL DATAPACKAGE MECHANICAL DATA
